GB/T 4937.18-2018Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose) (English PDF)

Foreword

GB/T 4937 "Mechanical and Climatic Test Methods for Semiconductor Devices" consists of the following components.

--- Part 1. General;

--- Part 2. Low pressure;

--- Part 3. External visual inspection;

--- Part 4. Strongly accelerated steady-state damp heat test (HAST);

---Part 5. Steady-state temperature and humidity bias life test;

---Part 6. High temperature storage;

--- Part 7. Internal water vapor content test and other residual gas analysis;

--- Part 8. Sealing;

---Part 9. Logo durability;

--- Part 10. Mechanical shock;

--- Part 11. rapid temperature change double tank method;

--- Part 12. Sweeping vibration;

--- Part 13. Salt spray;

--- Part 14. Terminal strength (lead robustness);

---Part 15. Resistance to soldering of through-hole mounting devices;

--- Part 16. Particle collision noise detection (PIND);

---Part 17. Neutron irradiation;

---Part 18. Ionizing radiation (total dose);

---Part 19. Chip shear strength;

--- Part 20. The combined effects of moisture-resistant and soldering heat on plastic surface mount devices;

---Part 20-1. Operation, packaging, marking and transport of surface mount devices sensitive to the combined effects of moisture and soldering heat;

---Part 21. Solderability;

---Part 22. Bonding strength;

--- Part 23. High temperature working life;

--- Part 24. Accelerated moisture-resistant and non-biased strong accelerated stress test (HSAT);

---Part 25. Temperature cycling;

--- Part 26. Electrostatic discharge (ESD) sensitivity test human body model (HBM);

--- Part 27. Electrostatic discharge (ESD) sensitivity test mechanical model (MM);

--- Part 28. Electrostatic discharge (ESD) sensitivity test, charged device model (CDM), device level;

---Part 29. Latch test;

--- Part 30. Pre-treatment of unsealed surface mount devices prior to reliability testing;

--- Part 31. Flammability of plastic encapsulated devices (internal);

--- Part 32. Flammability of plastic encapsulated devices (external);

---Part 33. Accelerated moisture resistance without bias high pressure cooking;

--- Part 34. Power cycling;

--- Part 35. Acoustic scanning microscopy of plastic electronic components;

---Part 36. Constant acceleration;

--- Part 37. Plate-level drop test method using accelerometers;

--- Part 38. Soft error test methods for semiconductor memory devices;

--- Part 39. Measurement of moisture diffusivity and water dissolution rate of raw materials for semiconductor components;

--- Part 40. Plate-level drop test method using tension meter;

--- Part 41. Reliability test methods for non-volatile memory devices;

--- Part 42. Storage of temperature and humidity;

--- Part 43. Guide to the reliability identification scheme for integrated circuits (ICs);

--- Part 44. Test method for neutron beam irradiation single particle effect of semiconductor devices.

This part is the 18th part of GB/T 4937.

This part is drafted in accordance with the rules given in GB/T 1.1-2009.

This section uses the translation method equivalent to IEC 60749-18.2002 "Semiconductor device mechanical and climatic test methods Part 18.

Ionizing radiation (total dose).

1 Scope

This part of GB/T 4937 performs 60Co gamma-ray source ionizing radiation on packaged semiconductor integrated circuits and semiconductor discrete devices.

The total dose test provides a test procedure.

This section provides an accelerated annealing test method to evaluate the effect of low dose rate ionizing radiation on the device. This annealing test for low dose rates

The application of radiation or devices that exhibit time-varying effects in certain applications is important.

This section applies only to steady-state irradiation and is not suitable for pulsed irradiation.

This section is primarily for military or space related applications.

This test may cause severe degradation of the electrical properties of the irradiated device and is therefore considered a destructive test.

2 Terms and definitions

The following terms and definitions apply to this document.

2.1

Ionizing radiation effectionizingradiationeffects

A change in electrical parameters of a discrete device or integrated circuit is caused by radiation induced charges.

Note. Also known as the total dose effect.

2.2

Testing in-fluxtest in irradiation

Electrical testing of the device during irradiation.

2.3

Nonin-fluxtest in non-irradiation

Electrical testing of the device at any time other than during the irradiation period.

2.4

Excavation test remotetests

An electrical test of the device after removing the device from the irradiated position.

2.5

Time-dependent effect

After irradiation, significant degradation of the electrical parameters of the device is caused by the generation or (and) annealing of the radiation induced trap charge.

Note. A similar effect occurs in the device during irradiation.

2.6

Accelerated annealing test acceleratedannealingtest

A method of increasing the temperature to accelerate the time-varying effect.

3 test equipment

Equipment shall include radiation sources, electrical parameter test devices, test circuit boards, cables, patch panels or switch systems, suitable dosimetry systems