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GB/T 4937.18-2018Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose) (English PDF)

半导体器件机械和气候试验方法第18部分：电离辐照(总剂量)

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Issued by

State Administration for Market Regulation, China National Standardization Administration

Level / Type

National · Recommended

Issue date

September 17, 2018

Implementation date

January 1, 2019

Scope

GB/T 4937.18-2018 is the English-translated version of 半导体器件机械和气候试验方法第18部分：电离辐照(总剂量).

GB/T 4937.18-2018 is the Chinese standard "Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)". Its scope clause reads: This part of GB/T 4937 performs 60Co gamma-ray source ionizing radiation on packaged semiconductor integrated circuits and semiconductor discrete devices.

The total dose test provides a test procedure. This section provides an accelerated annealing test method to evaluate the effect of low dose rate ionizing radiation on the device.

This annealing test for low dose rates The application of radiation or devices that exhibit time-varying effects in certain applications is important. This section applies only to steady-state irradiation and is not suitable for pulsed irradiation.

This section is primarily for military or space related applications. This test may cause severe degradation of the electrical properties of the irradiated device and is therefore considered a destructive test. Its clauses include terms and definitions; test equipment.

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Document preview — GB/T 4937.18-2018

National Standard of the People's Republic of China

ICS: 31.080.01
Classification: L 40

Issued by: State Administration for Market Regulation, China National Standardization Administration

1 Scope
2 Terms and definitions
2.1 Ionizing radiation
2.2 Testing in-fluxtest in irradiation
2.3 Nonin-fluxtest in non-irradiation
2.4 Excavation test remotetests
2.5 Time-dependent effect
2.6 Accelerated annealing test
3 test equipment

1 Scope

This part of GB/T 4937 performs 60Co gamma-ray source ionizing radiation on packaged semiconductor integrated circuits and semiconductor discrete devices.

The total dose test provides a test procedure.

This section provides an accelerated annealing test method to evaluate the effect of low dose rate ionizing radiation on the device. This annealing test for low dose rates

The application of radiation or devices that exhibit time-varying effects in certain applications is important.

This section applies only to steady-state irradiation and is not suitable for pulsed irradiation.

This section is primarily for military or space related applications.

This test may cause severe degradation of the electrical properties of the irradiated device and is therefore considered a destructive test.

2 Terms and definitions

The following terms and definitions apply to this document.

2.1 Ionizing radiation

A change in electrical parameters of a discrete device or integrated circuit is caused by radiation induced charges.

Note. Also known as the total dose effect.

2.2 Testing in-fluxtest in irradiation

Electrical testing of the device during irradiation.

2.3 Nonin-fluxtest in non-irradiation

Electrical testing of the device at any time other than during the irradiation period.

2.4 Excavation test remotetests

An electrical test of the device after removing the device from the irradiated position.

2.5 Time-dependent effect

After irradiation, significant degradation of the electrical parameters of the device is caused by the generation or (and) annealing of the radiation induced trap charge.

Note. A similar effect occurs in the device during irradiation.

2.6 Accelerated annealing test

A method of increasing the temperature to accelerate the time-varying effect.

3 test equipment

Equipment shall include radiation sources, electrical parameter test devices, test circuit boards, cables, patch panels or switch systems, suitable dosimetry systems […]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.

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