GB/T 4023-2015Discrete semiconductor devices - Part 1: Sectional specification (English PDF)
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Issued by
State Administration for Market Regulation
Level / Type
National · Recommended
Issue date
March 31, 2026
Implementation date
October 1, 2026
Scope
GB/T 4023-2015 (Discrete semiconductor devices - Part 1: Sectional specification) is available as an English-translated PDF.
GB/T 4023-2015 — This document specifies the terms and definitions, technical requirements, test methods, and inspection rules for semiconductor discrete devices (hereinafter referred to as "devices").
And packaging, transportation and storage requirements. This document applies to semiconductor discrete devices other than optoelectronic devices and discrete device modules.
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Document preview — GB/T 4023-2015
National Standard of the People's Republic of China
- ICS
- 31.080.01
- Classification
- L 40
- Replacing
- GB/T 12560-1999
Issued by: State Administration for Market Regulation
Contents
- 1 Scope
- 4 Technical Requirements
- 4.1 General Requirements
- 4.2 Functional Characteristics Requirements
- 4.3 Electrical stress resistance requirements
- 4.4 Environmental stress resistance requirements
- 4.5 Requirements for resistance to mechanical stress
- 4.6 Recommended (preferred) operating temperature values
- 4.7 Recommended (Preferred) Values for Voltage and Current
- 4.8 Mark
- 4.9 Model Naming
- 4.10 Quality Assurance Procedures
- 4.11 Quality Assurance Level
- 4.12 Technical Appraisal
- 4.13 Design Verification
- 4.14 Process Monitoring
- 4.15 Monitoring of electrical parameter fluctuations
- 4.16 Identification and Testing
- 4.17 Quality Consistency Inspection
- 4.18 Structural Similarity Determination
- 5 Test Methods
- 5.1 General Provisions
- 5.2 Testing and Verification of Functional Characteristics
- 5.3 Electrical stress resistance test
- 5.4 Environmental stress resistance test
- 5.5 Mechanical Stress Resistance Test
- 6 Inspection Rules
- 6.1 General Rules
- 6.2 Inspection Classification
- 6.3 Inspection Lot
- 6.4 Failure Determination
- 6.5 Screening
- 7 Packaging, Transportation and Storage
- 7.1 Packaging
- 7.2 Transportation and Storage
1 Scope
This document specifies the terms and definitions, technical requirements, test methods, and inspection rules for semiconductor discrete devices (hereinafter referred to as "devices").
And packaging, transportation and storage requirements.
This document applies to semiconductor discrete devices other than optoelectronic devices and discrete device modules.
4 Technical Requirements
4.1 General Requirements
The technical requirements of the devices shall meet the requirements of GB/T 4589.1-2006 and this document.
4.2 Functional Characteristics Requirements
4.2.1 Maximum Rated Parameters
The maximum rated parameters and conditions of the device should be specified.
4.2.2 Main Electrical Characteristic Parameters
The main electrical characteristic parameters and conditions of the device should be specified.
4.2.3 Parameter Curve
The parameter curves of the device should be specified.
4.2.4 Thermal properties
The steady-state thermal resistance and transient thermal resistance of the device should be specified.
4.3 Electrical stress resistance requirements
The device should be able to withstand the electrical stress encountered during operation.
4.4 Environmental stress resistance requirements
The device should be able to withstand environmental stresses encountered during transportation, installation, and operation.
4.5 Requirements for resistance to mechanical stress
The device should be able to withstand the mechanical stress encountered during transportation, installation, and operation.
4.6 Recommended (preferred) operating temperature values
The recommended operating temperature of the device should comply with the provisions of GB/T 17573.
4.7 Recommended (Preferred) Values for Voltage and Current
The recommended voltage and current values for the device should comply with the provisions of GB/T 17573.
4.8 Mark
4.8.1 Markings on the device
When the device area allows, the following markings should be made on the device.
a) Lead-out identification mark;
b) Model and quality assurance level.
c) Manufacturer's name, trademark, or factory identification code.
d) Inspection lot identification code;
e) Where applicable, indicate any special precautions.
When the area of a device does not allow for the marking of all of the above, the minimum marking requirements should be given in the preferred order described above.
4.8.2 Markings on packaging
The following markings should appear on the initial packaging, which serves as the first protection or packaging for delivery.
a) All marks listed in 4.8.1 except for the lead-out mark;
b) Special considerations, such as warning signs, etc.
4.8.3
Lead-out polarity marker 4.8.3,1 Diode the polarity of a diode can be clearly indicated using one of the following methods.
a) Rectifier diode graphic symbol. the arrow points to the cathode end.
b) Color mark. For smaller devices, mark a distinct color band or dot on the cathode end; when the device size is even smaller, mark the cathode end...
When color codes may be confused with model markings, the latter can be omitted. For larger devices, use color bands (lines) to mark the cathode.
4.8.3.2 Transistor
A polarity identification mark should be specified for the lead-out terminal.
4.8.3.3 Thyristor
Identify the lead-out end using one of the following methods.
a) Graphic symbol. The graphic symbol for a unidirectional thyristor transistor is an arrow pointing towards the cathode; the graphic symbol for a bidirectional thyristor transistor is a single arrow pointing towards the cathode.
The arrow points towards the first positive extreme, while the other arrow points towards the second positive extreme.
b) Letter symbol. When marking the anode (first anode of the bidirectional thyristor) terminal, the letter A should be used (corresponding to the bidirectional thyristor).
A1 or T1); When marking the cathode (second anode of the bidirectional thyristor) terminal, the letter K should be used (corresponding to the bidirectional thyristor).
(A2 or T2); When the control terminal (gate end) is marked, the letter G should be used.
c) When the above marking methods are not technically feasible, a method for identifying the lead-out end should be specified.
4.9 Model Naming
The model designation of discrete semiconductor devices shall comply with the provisions of GB/T 249.
4.10 Quality Assurance Procedures
During the technology research and development phase, the manufacturing process of the device should be technically evaluated to prove that the manufacturing process can guarantee the reliability of the device to meet the specified requirements.
During the device design phase, it is necessary to verify whether the design meets the specified functional and performance requirements. Devices within the structural similarity group should be selected.
Representative products undergo qualification testing. Once a device passes the qualification testing, other devices with similar structures within the same group that pass Group A testing can be considered as qualified products.
Through qualification and testing. To verify the stability of the device manufacturing process, quality consistency testing should be conducted as required. During the device manufacturing process, [the following should be observed].
Monitoring key process stability and proposing process improvement measures based on monitoring electrical parameter fluctuations can enhance product parameters.
To the point of being responsive.
4.11 Quality Assurance Level
This document specifies two quality assurance levels. industrial grade (represented by the letter "G") and automotive grade (represented by the letter "Q").
4.12 Technical Appraisal
During the technology research and development phase, the manufacturing process of the device should be technically evaluated to prove that the manufacturing technology can guarantee the reliability of the device.
In accordance with regulations
4.13 Design Verification
During the device design phase, it is necessary to verify whether the device design meets the predetermined functional and performance requirements. For devices using mature processes...
For devices designed and manufactured, the design verification items should include at least the device's electrical parameters and maximum rated parameters, as well as electrostatic discharge sensitivity tests.
For devices designed and manufactured using new processes, design verification projects should include at least the following.
a) Electrical parameters and their distribution.
b) Verify the maximum rated parameters of the device;
c) Life test;
d) Key environmental stress resistance tests, such as temperature shock test, accelerated steady-state damp heat test, and plate-level temperature shock test (applicable).
(Time), etc.
4.14 Process Monitoring
The stability of the process should be monitored regularly, including at least chip ion implantation, chip photolithography, chip bonding (or sintering), and...
Internal wire bonding process.
4.15 Monitoring of electrical parameter fluctuations
Electrical parameters sensitive to process fluctuations should be identified, and their fluctuations should be monitored to analyze the changes in device electrical parameters.
By studying the trends and the reasons for fluctuations in electrical parameters, and making corresponding adjustments to the manufacturing process, the consistency of device electrical parameters can be improved.
The above regulations apply to the manufacturing process of automotive-grade components. When producing industrial-grade components, these regulations can be used as a reference to address process variations.
control.
4.16 Identification and Testing
The devices should be inspected and qualified in accordance with the requirements of Chapter 6, and they can only be supplied after passing the inspection.
Representative devices can be selected from a group of structurally similar devices for identification and testing. After the representative devices pass the identification and testing, the structural similarities can be further analyzed.
The qualification extension extends the eligibility of other devices within the same device group to other devices. This qualification extension is only applicable to devices utilizing mature technologies.
Products manufactured using advanced technology.
4.17 Quality Consistency Inspection
The devices should be inspected for quality consistency according to the requirements of Chapter 6: Devices within a group of structurally similar devices can be selected in rotation for quality consistency testing.
Consistency test.
4.18 Structural Similarity Determination
4.18.1 General Rules
Devices with similar structures refer to those that are ultimately packaged on the same production line, manufactured using the same production process, and have the same device type and packaging.
Devices with the same or similar shape and materials, differing only in electrical performance. The classification of different device models should be determined according to sections 4.18.2 to 4.18.6.
The determination is made based on the similarity of the structures of the devices.
4.18.2 Device Categories
Devices with similar structures should belong to the same category.
Note. Device categories include low-power negative-positive-negative (NPN) bipolar transistors, low-power positive-negative-positive (PNP) bipolar transistors, and high-power NPN bipolar transistors.
Transistors, high-power PNP bipolar transistors, N-channel field-effect transistors, P-channel field-effect transistors, rectifier diodes, switching diodes, transient diodes Voltage suppression diodes, thyristors, insulated gate bipolar transistors (IGB Ts), etc.
4.18.3 Chip Design
Devices with similar structures share the same chip layout design rules and the same units that implement basic functions. The largest [unit/component] within a group of structurally similar devices...
The area ratio to the smallest chip should not exceed 2.
4.18.4 Wafer Manufacturing
For devices with similar structures, their wafer manufacturing should comply with the following regulations.
a) The basic technologies and processes are the same;
b) Same passivation type;
c) Same manufacturing method, materials, and properties;
d) The substrate material and its properties are the same.
4.18.5 Chip Installation
For devices with similar structures, the chip mounting method should comply with the following regulations.
a) The chip sintering materials are the same;
b) The chip sintering methods are the same;
c) The chip sintering temperature is the same;
d) The bonding wires are made of the same material;
e. The diameters of the bonding wires may be the same or different;
f) The number of bonding wires is the same or different;
g) The process of bonding the bonding wire to the chip is the same.
4.18.6 Package
Devices with similar structures should have their packaging conform to the following specifications.
a) The package structure (layout) should be the same.
b) Same or different package sizes.
c) The packaging materials should be the same;
d) The packaging process should be the same.
5 Test Methods
5.1 General Provisions
The devices shall be tested in accordance with GB/T 4937 (all parts) and the provisions of this document.
5.2 Testing and Verification of Functional Characteristics
5.2.1 Verification of maximum rated parameters
The verification of the maximum rated parameters of a device should be based on the device category according to GB/T 4023, GB/T 4023.3, GB/T 4023.4, it shall be carried out in accordance with the provisions of GB/T 4586, GB/T 4587 or GB/T 29332.
5.2.2 Electrical Parameter Testing
The electrical parameter testing of devices should be conducted according to the device category and in accordance with GB/T 4023, GB/T 4023.3, GB/T 4023.4, GB/T 4586, it shall be carried out in accordance with the provisions of GB/T 4587 or GB/T 29332.
5.2.3 Steady-state thermal resistance test
Steady-state thermal resistance testing of devices should be conducted according to the device category and in accordance with GB/T 4023, GB/T 4023.3, GB/T 4023.4, GB/T 4586, it shall be carried out in accordance with the provisions of GB/T 4587 or GB/T 29332.
5.3 Electrical stress resistance test
5.3.1 High Temperature and High Humidity Reverse Polarization
The high temperature and high humidity reverse polarity test shall be conducted in accordance with IEC 60749-5.
5.3.2 Steady-state operating life
The steady-state working life test shall be conducted in accordance with section 5.2.3.1 of GB/T 4937.23-2023.
5.3.3 Intermittent Operating Life Test (Power Cycle)
Intermittent working life test (power cycle) shall be conducted in accordance with test condition 3 of GB/T 4937.34-2024.
5.3.4 High Temperature Reverse Bias
The high-temperature reverse polarity test shall be conducted in accordance with section 5.2.3.3 of GB/T 4937.23-2023.
5.3.5 High-Temperature Grid Bias
The high-temperature grid deflection test shall be conducted in accordance with section 5.2.3.4 of GB/T 4937.23-2023.
5.4 Environmental stress resistance test
5.4.1 High-temperature storage
The high-temperature storage test shall be conducted according to test conditions Bb of GB/T 2423.2-2008.
5.4.2 Temperature Cycling
Temperature cycling tests shall be conducted in accordance with the provisions of GB/T 4937.25.
5.4.3 Solderability
The weldability test shall be conducted in accordance with the provisions of GB/T 4937.21.
5.4.4 Unbiased, strongly accelerated steady-state humid heat
The unbiased accelerated steady-state damp heat test shall be conducted in accordance with the provisions of GB/T 4937.24.
5.4.5 Strongly Accelerated Steady-State Humid Heat
The accelerated steady-state damp heat test shall be conducted in accordance with the provisions of GB/T 4937.4.
5.4.6 Moisture Sensitivity Rating Test
The humidity sensitivity rating test shall be conducted in accordance with Appendix A.
5.4.7 Salt spray
Salt spray test shall be conducted in accordance with the provisions of GB/T 4937.13.
5.4.8 Electrostatic Discharge (ESD) Sensitivity Test (Machine Model)
Electrostatic discharge (ESD) sensitivity testing (machine model) shall be conducted in accordance with GB/T 4937.27.
5.4.9 Electrostatic Discharge (ESD) Sensitivity Test (Human Model)
Electrostatic discharge (ESD) sensitivity testing (human model) shall be conducted in accordance with GB/T 4937.26.
5.4,10 Internal flammability the internal flammability test shall be conducted in accordance with the provisions of GB/T 4937.31.
5.4.11 External flammability
External flammability testing shall be conducted in accordance with the provisions of GB/T 4937.32.
5.4.12 Resistance to welding heat
The weld heat resistance test shall be conducted in accordance with the provisions of GB/T 4937.15.
5.4.13 Low pressure
The low-pressure test shall be conducted in accordance with the provisions of GB/T 2423.21.
5.4.14 Marking durability
Marking durability testing shall be conducted in accordance with the provisions of GB/T 4937.9.
5.5 Mechanical Stress Resistance Test
5.5.1 External visual inspection
External visual inspection shall be carried out in accordance with the provisions of GB/T 4937.3.
5.5.2 Lead-out end strength
The strength test of the lead-out end shall be carried out in accordance with the provisions of GB/T 4937.14.
5.5.3 Sealing
The sealing test shall be conducted in accordance with the provisions of GB/T 4937.8.
5.5.4 Impact
Impact testing shall be conducted in accordance with the provisions of GB/T 2423.5.
5.5.5 Vibration
Vibration tests shall be conducted in accordance with the provisions of GB/T 4937.12.
5.5.6 Constant Acceleration
The constant acceleration test shall be conducted in accordance with the provisions of GB/T 2423.15.
5.5.7 Chip Shear Strength
The chip shear strength test shall be conducted in accordance with the provisions of GB/T 4937.19.
5.5.8 Bond strength
The bonding strength of the internal leads shall be tested according to GB/T 4937.22.The bonding tensile strength test criteria for the bonding wires shall conform to the provisions of Table 1.
For the uncovered diameter, the tensile criterion shall comply with the provisions of GB/T 4937.22.
6 Inspection Rules
6.1 General Rules
The devices shall be inspected in accordance with Chapter 3 of GB/T 4589.1-2006 and the requirements of this document.
6.2 Inspection Classification
The inspections specified in this document are divided into the following three categories;
a) Screening;
b) Identification and testing;
c) Quality consistency inspection.
6.3 Inspection Lot
All devices submitted for qualification testing or quality conformity testing constitute a device inspection lot. Each inspection lot consists of devices of the same model.
The devices consist of a single, or a batch of devices with similar structures (see 4.18) using the same packaging and wire-plating process. All all devices should be manufactured on the same production line using the same process from chip sintering to final packaging. Their packaging should be completed within the same period (not exceeding [a certain timeframe]).
Complete within 6 weeks.
6.4 Failure Determination
For industrial-grade devices, if the electrical parameters of the device fail to reach the nominal values after testing, the device is considered to have failed.
For automotive-grade components, if the following conditions are observed after testing, the component is considered to have failed.
a) Electrical parameters do not meet the nominal values.
b) The change in electrical parameters after environmental testing exceeds ±20% of the initial value (excluding leakage current). For devices exceeding this specification, the manufacturer should...
Prove the rationality of the parameter deviation.
External physical damage occurred after environmental testing. Analysis determined that the failure was caused by operational errors, excessive electrical stress, and electrostatic discharge.
Other factors unrelated to the test/test conditions may not be classified as device failure.
6.5 Screening
When screening is specified, all components in the production batch should be screened according to Table 2.A pre-defined pass rate should be specified; if the pass rate does not meet the requirements...
If the requirements are met, a failure analysis should be conducted. If it can be proven that the failure can be eliminated through screening, then delivery can continue; otherwise, delivery should not be made.
7 Packaging, Transportation and Storage
7.1 Packaging
Each electrostatic sensitive device should be properly packaged to prevent the accumulation of static charge on each lead. This can be achieved using wires, springs, etc.
Clips, thin metal sheets, metal apertures, and electrostatic-free plastic rails connect all the leads together or mount the device on conductive materials.
On the material.
Warning signs should be included in the packaging, and where possible, appropriate instructions should also be included to ensure that the device is accessible before contact with it.
First, see these warning messages.
7.2 Transportation and Storage
Electrostatic sensitive devices should be transported or stored in their original packaging or packaging with equivalent protection.
Storage requirements for molded devices shall be in accordance w...
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 29 pages — is available in the English PDF.
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- JB/T 8949.1-2013General Purpose Rectifier Diodes - Part 1: Stud Devices
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