GB/T 37660-2019Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC) (English PDF)

GB/T 37660-2019 is the English-translated version of 柔性直流输电用电力电子器件技术规范.

GB/T 37660-2019 fixes the ratings and characteristics, the tests, and the marking and order form content of the power electronic devices used in high-voltage direct current transmission with voltage sourced converters, which the Chinese text calls flexible DC transmission.

Clause 1 applies it to IGBT-diode pairs for that service and to other fully controlled power electronic devices for it, adding that such devices may also be covered by reference.

The contents list names clause 3 on terms and definitions, clause 4 on ratings and characteristics with separate subclauses on ratings and on features, clause 5 on testing split into routine tests and type tests, and clause 6 on marking and the order form.

Clause 3 defines an IGBT-diode pair as an IGBT and a freewheeling diode combined in anti-parallel connection, taking the definition from GB/T 34118-2017, and defines the five-cycle forward surge current IFSM5 as a diode forward current of the waveform in Figure 1 lasting five power frequency cycles, noting that it arises from abnormal circuit conditions such as faults, may push the junction temperature of the device beyond its maximum rating, and may occur only a limited number of times in the working life of the device.

The normative references are GB/T 4023-2015 on rectifier diodes, GB/T 29332-2012 on insulated gate bipolar transistors, GB/T 34118-2017 on voltage source converter terminology for high voltage DC systems and IEC 60747-15:2010 on isolated power semiconductor devices.

The standard was proposed by the China Electrical Equipment Industry Association and is under the jurisdiction of the National Standardization Technical Committee for Power Electronic Devices for Power Transmission and Distribution (SAC/TC413), its drafting bodies being power grid companies and research institutes, power electronics and high-voltage apparatus research institutes and semiconductor manufacturers.

It carries ICS code 31.080.30 and Chinese classification K46, was issued on 4 June 2019 and has applied since 1 January 2020.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

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