GB/T 6217-2026Discrete semiconductor devices - Blank detail specification for low power bipolar transistors (English PDF)

4.3 Maximum Ratings and Main Electrical Characteristics

4.3.1 Maximum Rated Value The maximum rated parameters of the device shall conform to the specifications in Table

1.Unless otherwise specified, these rated parameters shall apply throughout the operating temperature range. For internal use only.

4.3.2 Electrical Characteristics The electrical characteristics of the device shall conform to the specifications in Table 2 (unless otherwise specified, Ta = 25°C, and other environmental conditions shall conform to GB/T 4589.1-2006). (As specified in 4.1). Inspection requirements are detailed in Chapter 4.

4.3.3 Electrical parameter curves The detailed specifications should provide key electrical parameter curves for the device, including total power dissipation versus temperature derating curves.

4.4 Quality Assessment Categories and Quality Grades Detailed specifications should provide the quality assessment category and quality grade of the device, see GB/T 4589.1-2006 and GB/T 4023.1-2026.

4.5 Marking

4.5.1 Markings on the device The markings on the device shall comply with the provisions of GB/T 4023.1-2026.

4.5.2 Markings on the packaging box The markings on the packaging box should include at least.

---Manufacturer's trademark;

---Contact information for the manufacturer.

4.6 Model Naming Model naming should comply with the provisions of GB/T 249.

5.2 Quality Consistency Inspection

5.2.1 General Rules Quality consistency inspection shall comply with the provisions of

6.6 and Tables 4 to 6 of GB/T 4023.1-2026.

5.2.2 Group A Test Group A testing is conducted batch-by-batch, and the specific testing items are shown in Table

4.Structural similarity should not be used as a substitute for Group A testing.

5.2.3 Group B Test Group B testing is conducted batch-by-batch; specific testing items are shown in Table

5.Group B testing allows the use of test data from structurally similar devices. To make a substitution. GB/T 6217-2026. Blank Detailed Specification for Small Power Bipolar Transistors, Discrete Semiconductor Devices ICS

42 National Standards of the People's Republic of China Replaces GB/T 6217-1998 and GB/T 6218-1996 Semiconductor discrete devices Low-power bipolar transistor blank detailed specification Published on 2026-03-

31 Implemented on October 1, 2026 State Administration for Market Regulation The State Administration for Standardization issued a statement.