GB/T 7576-2026Discrete semiconductor devices - Blank detail specification for high power bipolar transistors (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part

1.Structure and Drafting Rules of Standardization Documents". Drafting. This document supersedes GB/T 7576-1998 "Semiconductor Devices - Discrete Devices - Part

1 Scope

GB/T 7576-2026 is the Chinese national standard covering the same blank form for power transistors - with the thermal resistance, the safe operating area and the switching parameters that only matter once the device is dissipating tens of watts. It replaces GB/T 7576-1998 and has been in force since 1 October 2026. It was issued on 31 March 2026 and takes effect on 1 October 2026, replacing GB/T 7576-1998. This page is published from the official record of the 2026 edition; the clause text of a standard this recent is not yet in circulation, and the figures, limits and tables it contains are those of the document itself, delivered in full with the English translation.

This document specifies the requirements for developing detailed specifications for high-power bipolar transistors, as well as the test conditions, inspection requirements, packaging, transportation, and storage. This document applies to the development of detailed specifications for high-power bipolar transistors.

3 Terms and Definitions

This document does not contain any terms or definitions that need to be defined.

4 Requirements

4.1 General Rules This document should be used in conjunction with GB/T 4023.1-2026.

4.2 Structure and Shape Detailed specifications should provide the basic structure of the device (including the semiconductor materials used, chip fabrication structure, chip bonding or sintering process, and bonding). The material, diameter and quantity of the wire) and its shape (including the package shape, lead material and coating, dimensions, etc.). Dimension Code. When the dimensions of a device are listed in GB/T 7581, the dimension code of the device should be given. Outline drawing. When the outline dimensions of a device are not listed in GB/T 7581, a detailed outline drawing of the device should be provided. Lead identification. A lead arrangement diagram should be specified.

5 Test conditions and inspection requirements

5.1 Screening The screening should comply with the provisions of section

6.5 and Table 3 of GB/T 4023.1-2026.

7 Bipolar Transistors - Chapter

4.High Frequency". "Detailed Specifications for Rated Bipolar Transistors in Packages for Amplifying Tubes" and GB/T 7577-1996 "Low-Frequency Rated Bipolar Transistors in Packages for Amplifying Tubes" The document is based on GB/T 7576-1998, and incorporates content from GB/T 7577-1996.It is consistent with GB/T 7576- Compared to.1998, aside from structural adjustments and editorial changes, the main technical changes are as follows:

---Added total input power requirements at maximum rated temperatures of TC=25°C and TC=100°C (see Table 1);

---The highest collector-emitter (DC) voltage VCEX at the specified reverse base voltage has been removed, as well as the requirement for a short circuit between the base and emitter. The highest collector-emitter (DC) voltage VCES at the specified external resistor RBE and the highest collector-emitter (DC) voltage at the specified external resistor RBE Parameters related to application conditions, such as current (VCR) and voltage (VCER), are specified (see Table 4 of GB/T 7576-1998 and GB/T 7577-1996). Table 4);

---A clause on electrical parameter curves has been added (see 4.3.3);

---Added filtering (see 5.1);

---The test for non-functional devices in group A2a has been removed (see Table 1 of GB/T 7576-1998 and GB/T 7577-1996). Table 1);

---The test of the common-base output capacitor for group A3 has been added (see Table 4);

---The test of the common-base output capacitor in the C2a group has been removed (see Table 3 of GB/T 7576-1998). Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents. This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by: China Electronics Technology Standardization Institute, the Fifth Research Institute of Electronics Technology of the Ministry of Industry and Information Technology, and Jinan Jingheng Electronics Co., Ltd. Limited Liability Company, Xi'an Huanyu Microelectronics Co., Ltd., Military Project Review Center of the State Administration of Science, Technology and Industry for National Defense, Shenzhen Maxipu Semiconductor The companies mentioned are. Ti Co., Ltd., Qingdao Jiaen Semiconductor Co., Ltd., and Shenzhen Xinzhantong Electronics Co., Ltd. The main drafters of this document are. Cao Zan, Zhou Shengze, Sun Ming, Yan Meicun, Hou Xiuping, Bian Yan, Dai Junfu, Tian Yanchun, Wang Hui, Wang Pilong, and Zhou Gang. The release history of this document and the document it replaces is as follows:

---GB/T 7576, first published in 1987, first revised in.1998;

---GB/T 7577, first published in 1987, first revised in.1996;

---This is the second revision. Semiconductor discrete devices High-power bipolar transistor blank detailed specification