GB/T 29332-2012Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT) (English PDF)
半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT)
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Issued by
Standardization Administration of China
Level / Type
National · Recommended
Issue date
December 31, 2012
Implementation date
June 1, 2013
Scope
GB/T 29332-2012 is the English-translated version of 半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT).
GB/T 29332-2012 — This standard gives the terminology insulated gate bipolar transistor (IGB T), text symbols, essential ratings and characteristics and test methods yield Product specific requirements.
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Document preview — GB/T 29332-2012
National Standard of the People's Republic of China
- ICS
- 31.080.01; 31.080.30
- Classification
- L 42
Issued by: Standardization Administration of China
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies the insulated gate bipolar transistor (IGBT) terminology, text symbols, essential ratings and characteristics and test methods, product-specific requirements.
Document data
International classification (ICS): 31.080.01; 31.080.30.
Chinese classification (CCS): L42.
Estimated length of the Chinese original: 5,551 words.
Adopted international standard: IEC 60747-9-2007, IDT.
Standards quoted by this document
IEC 60747-1-2006; IEC 60747-2; IEC 60747-6; IEC 61340-2-1; IEC 61340-2-3; IEC 61340-3-1; IEC 61340-3-2; IEC 61340-4-10; IEC 61340-4-1; IEC 61340-4-3; IEC 61340-4-4; IEC 61340-4-5; IEC 61340-4-6; IEC 61340-4-7; IEC 61340-4-8; IEC 61340-4-9; IEC 61340-5-1
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 48 pages — is available in the English PDF.
Referenced standards
Normative references
IEC 60747 · IEC 61340
Cited by
- RB/T 247-2026Automotive chip testing organizations—General requirements for evaluation of basic capability
- GB/T 39392-2020Technical specification of intelligent power module for household appliances
- QC/T 1136-2020Environmental test requirements and test methods of insulated-gate bipolar transistors (IGBT) module for electric vehicles
- DL/T 2033-2019Test methods for power unit of high voltage variable frequency drive used in fossil-fuel power plants
- GB/T 37660-2019Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
- GB/T 35702.1-2017Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems -- Part 1: General requirements
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