GB/T 4023.1-2026Discrete semiconductor devices - Part 1: Sectional specification (English PDF)

4.2 Functional Characteristics Requirements

4.2.1 Maximum Rated Parameters The maximum rated parameters and conditions of the device should be specified.

4.2.2 Main Electrical Characteristic Parameters The main electrical characteristic parameters and conditions of the device should be specified.

4.2.3 Parameter Curve The parameter curves of the device should be specified.

4.2.4 Thermal properties The steady-state thermal resistance and transient thermal resistance of the device should be specified.

4.3 Electrical stress resistance requirements The device should be able to withstand the electrical stress encountered during operation.

4.4 Environmental stress resistance requirements The device should be able to withstand environmental stresses encountered during transportation, installation, and operation.

4.5 Requirements for resistance to mechanical stress The device should be able to withstand the mechanical stress encountered during transportation, installation, and operation.

4.6 Recommended (preferred) operating temperature values The recommended operating temperature of the device should comply with the provisions of GB/T 17573.

4.7 Recommended (Preferred) Values for Voltage and Current The recommended voltage and current values for the device should comply with the provisions of GB/T 17573.

4.8 Mark

4.8.1 Markings on the device When the device area allows, the following markings should be made on the device.

a) Lead-out identification mark;

b) Model and quality assurance level.

c) Manufacturer's name, trademark, or factory identification code.

d) Inspection lot identification code;

e) Where applicable, indicate any special precautions. When the area of a device does not allow for the marking of all of the above, the minimum marking requirements should be given in the preferred order described above.

4.8.2 Markings on packaging The following markings should appear on the initial packaging, which serves as the first protection or packaging for delivery.

a) All marks listed in

4.8.1 except for the lead-out mark;

b) Special considerations, such as warning signs, etc.

4.8.3 Lead-out polarity marker 4.8.3,

1 Diode The polarity of a diode can be clearly indicated using one of the following methods.

a) Rectifier diode graphic symbol. the arrow points to the cathode end.

b) Color mark. For smaller devices, mark a distinct color band or dot on the cathode end; when the device size is even smaller, mark the cathode end... When color codes may be confused with model markings, the latter can be omitted. For larger devices, use color bands (lines) to mark the cathode.

4.18 Structural Similarity Determination

4.18.1 General Rules Devices with similar structures refer to those that are ultimately packaged on the same production line, manufactured using the same production process, and have the same device type and packaging. Devices with the same or similar shape and materials, differing only in electrical performance. The classification of different device models should be determined according to sections

4.18.2 to 4.18.6. The determination is made based on the similarity of the structures of the devices.

4.18.2 Device Categories Devices with similar structures should belong to the same category.

Note. Device categories include low-power negative-positive-negative (NPN) bipolar transistors, low-power positive-negative-positive (PNP) bipolar transistors, and high-power NPN bipolar transistors. Transistors, high-power PNP bipolar transistors, N-channel field-effect transistors, P-channel field-effect transistors, rectifier diodes, switching diodes, transient diodes Voltage suppression diodes, thyristors, insulated gate bipolar transistors (IGB Ts), etc.

4.18.3 Chip Design Devices with similar structures share the same chip layout design rules and the same units that implement basic functions. The largest [unit/component] within a group of structurally similar devices... The area ratio to the smallest chip should not exceed 2.

4.18.4 Wafer Manufacturing For devices with similar structures, their wafer manufacturing should comply with the following regulations.

a) The basic technologies and processes are the same;

b) Same passivation type;

c) Same manufacturing method, materials, and properties;

d) The substrate material and its properties are the same.

4.18.5 Chip Installation For devices with similar structures, the chip mounting method should comply with the following regulations.

a) The chip sintering materials are the same;

b) The chip sintering methods are the same;

c) The chip sintering temperature is the same;

5.2 Testing and Verification of Functional Characteristics

5.2.1 Verification of maximum rated parameters The verification of the maximum rated parameters of a device should be based on the device category according to GB/T 4023, GB/T 4023.3, GB/T 4023.4, It shall be carried out in accordance with the provisions of GB/T 4586, GB/T 4587 or GB/T 29332.

5.2.2 Electrical Parameter Testing The electrical parameter testing of devices should be conducted according to the device category and in accordance with GB/T 4023, GB/T 4023.3, GB/T 4023.4, GB/T 4586, It shall be carried out in accordance with the provisions of GB/T 4587 or GB/T 29332.

5.2.3 Steady-state thermal resistance test Steady-state thermal resistance testing of devices should be conducted according to the device category and in accordance with GB/T 4023, GB/T 4023.3, GB/T 4023.4, GB/T 4586, It shall be carried out in accordance with the provisions of GB/T 4587 or GB/T 29332.

5.3 Electrical stress resistance test

5.3.1 High Temperature and High Humidity Reverse Polarization The high temperature and high humidity reverse polarity test shall be conducted in accordance with IEC 60749-5.

5.3.2 Steady-state operating life The steady-state working life test shall be conducted in accordance with section

5.2.3.1 of GB/T 4937.23-2023.

5.3.3 Intermittent Operating Life Test (Power Cycle) Intermittent working life test (power cycle) shall be conducted in accordance with test condition 3 of GB/T 4937.34-2024.

5.3.4 High Temperature Reverse Bias The high-temperature reverse polarity test shall be conducted in accordance with section

5.2.3.3 of GB/T 4937.23-2023.

5.3.5 High-Temperature Grid Bias The high-temperature grid deflection test shall be conducted in accordance with section

5.2.3.4 of GB/T 4937.23-2023.

5.4 Environmental stress resistance test

5.4.1 High-temperature storage The high-temperature storage test shall be conducted according to test conditions Bb of GB/T 2423.2-2008.

5.4.2 Temperature Cycling Temperature cycling tests shall be conducted in accordance with the provisions of GB/T 4937.25.

5.4.3 Solderability The weldability test shall be conducted in accordance with the provisions of GB/T 4937.21.

5.4.4 Unbiased, strongly accelerated steady-state humid heat The unbiased accelerated steady-state damp heat test shall be conducted in accordance with the provisions of GB/T 4937.24.

5.4.5 Strongly Accelerated Steady-State Humid Heat The accelerated steady-state damp heat test shall be conducted in accordance with the provisions of GB/T 4937.4.

5.4.6 Moisture Sensitivity Rating Test The humidity sensitivity rating test shall be conducted in accordance with Appendix A.

5.4.7 Salt spray Salt spray test shall be conducted in accordance with the provisions of GB/T 4937.13.

5.4.8 Electrostatic Discharge (ESD) Sensitivity Test (Machine Model) Electrostatic discharge (ESD) sensitivity testing (machine model) shall be conducted in accordance with GB/T 4937.27.

5.4.9 Electrostatic Discharge (ESD) Sensitivity Test (Human Model) Electrostatic discharge (ESD) sensitivity testing (human model) shall be conducted in accordance with GB/T 4937.26. 5.4,

10 Internal flammability The internal flammability test shall be conducted in accordance with the provisions of GB/T 4937.31.

5.4.11 External flammability External flammability testing shall be conducted in accordance with the provisions of GB/T 4937.32.

5.4.12 Resistance to welding heat The weld heat resistance test shall be conducted in accordance with the provisions of GB/T 4937.15.

5.4.13 Low pressure The low-pressure test shall be conducted in accordance with the provisions of GB/T 2423.21.

5.4.14 Marking durability Marking durability testing shall be conducted in accordance with the provisions of GB/T 4937.9.

5.5 Mechanical Stress Resistance Test

5.5.1 External visual inspection External visual inspection shall be carried out in accordance with the provisions of GB/T 4937.3.

5.5.2 Lead-out end strength The strength test of the lead-out end shall be carried out in accordance with the provisions of GB/T 4937.14.

5.5.3 Sealing The sealing test shall be conducted in accordance with the provisions of GB/T 4937.8.

5.5.4 Impact Impact testing shall be conducted in accordance with the provisions of GB/T 2423.5.

5.5.5 Vibration Vibration tests shall be conducted in accordance with the provisions of GB/T 4937.12.

5.5.6 Constant Acceleration The constant acceleration test shall be conducted in accordance with the provisions of GB/T 2423.15.

5.5.7 Chip Shear Strength The chip shear strength test shall be conducted in accordance with the provisions of GB/T 4937.19.

5.5.8 Bond strength The bonding strength of the internal leads shall be tested according to GB/T 4937.22.The bonding tensile strength test criteria for the bonding wires shall conform to the provisions of Table 1. For the uncovered diameter, the tensile criterion shall comply with the provisions of GB/T 4937.22.