GB/T 4587-2023Semiconductor devices - Discrete devices - Part 7: Bipolar transistors (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"

Drafting.

This document is Part 7 of "Semiconductor Devices Discrete Devices". "Semiconductor Devices Discrete Devices" has released the following parts.

---Part 1.General provisions;

---Part 2.Rectifier diodes;

---Part 2-1.Blank detailed specification for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A;

---Part 2-2.Greater than 100A, environmental and case rated rectifier diodes (including avalanche rectifier diodes) blank details

specification;

---Part 3.Signal (including switching) diodes and adjustment diodes;

---Part 3-1.Blank detailed specifications for signal diodes, switching diodes and controllable avalanche diodes;

---Part 3-2.Signal (including switching) diodes and adjustment diodes Voltage adjustment diodes Voltage reference diodes (not included

Temperature Compensated Precision Reference Diode) Blank Detailed Specification;

---Part 4.Microwave devices;

---Part 4-1.Detailed specifications for microwave diodes and transistors microwave field effect transistors;

---Part 6.Thyristors;

---Part 6-1.Blank detailed specification for three-pole thyristor transistors rated for environments below 100A or case rating;

---Part 6-2.Blank detailed specifications for environmental or case-rated bidirectional three-pole thyristors below 100A;

---Part 6-3.Blank detailed specification for reverse blocking three-pole thyristors with current greater than 100A and environmental and case ratings;

---Part 7.Bipolar transistors;

---Part 7-1.Blank detailed specification for bipolar transistors rated for high and low frequency amplification environments;

---Part 7-2.Blank detailed specification for low-frequency amplifier case-rated bipolar transistors;

---Part 7-3.Blank detailed specification for bipolar transistors for switches;

---Part 7-4.Blank detailed specification for high-frequency amplifier case rated bipolar transistors;

---Part 8.Field effect transistors;

---Part 8-1.Blank detailed specifications for single-gate field effect transistors below 1GHz and 5W;

---Part 8-3.Blank detailed specification for field effect transistors for case-rated switches;

---Part 9.Insulated gate bipolar transistor (IGB T);

---Part 10.General Specifications for Discrete Devices and Integrated Circuits;

---Part 11.Specifications for discrete devices.

This document replaces GB/T 4587-1994 "Semiconductor Discrete Devices and Integrated Circuits Part 7.Bipolar Transistors" and is consistent with

Compared with GB/T 4587-1994, in addition to file structure adjustments and editorial changes, the main technical changes are as follows.

a) The scope explicitly excludes microwave transistors and adds resistive bias transistors (see Chapter 1).

b) Terms and definitions.

1) Removed transistor types, common terms, circuit configuration, collector series resistance, emitter series resistance, extrinsic base

Terms and definitions of resistance, Allais voltage and S-parameters (see 1, 2, 3, 4.4, 4.5, 4.7, Chapter II of the.1994 edition

4.20, 5);

2) Added "specific functional area" (see 3.1), "turn-on time" and "off time" (see 3.3.7.2, 3.3.7.3), "collector-

Emitter sustaining voltage" (see 3.3.8), "turn-on loss" and "turn-off loss" (see 3.3.9, 3.3.10), "resistance bias crystal

The terms and definitions of "management" (see 3.2, 3.3.15~3.3.21).

c) Text symbols.

1) Delete the "breakdown voltage" in the voltage parameters (see Chapter II 6.4.1 of the.1994 edition) and the "inherent voltage" in the static parameters.

No. forward current transfer ratio" (see Chapter II 6.4.4.1 of the.1994 edition), "emitter depletion layer capacitance,

Collector depletion layer capacitance" (see Chapter II 6.4.6 of the.1994 edition) and "External circuit parameters" (see Chapter II of the.1994 edition

Chapter 6.4.8) text symbols;

2) Added text symbols for "turn-on loss", "turn-off loss", "power increase efficiency" and "resistance biased transistor" (see

4.3.8, 4.3.9, 4.3.11).

d) Basic ratings and characteristics.

1) Deleted the "high frequency parameters" of small signal transistors (see Chapter III, Section 1, 3.9, 3.11 of the.1994 edition); amplification and oscillation

The maximum collector-emitter voltage (VCES) when the base and emitter of a high-frequency power transistor are short-circuited and the base is open-circuited

The highest collector-emitter voltage (VCEO) when and/or the highest collector-emitter voltage when the external resistance is the specified value

"Voltage (VCER)" (see Chapter III, Section 3, 5.3, 5.4, 5.5 of the.1994 edition); "Computer-aided circuit design of switching transistors"

"Additional features of the design" (see Chapter III, Section 4, 3.4 of the.1994 edition);

2) All types of transistors have specified requirements for "thermal resistance" or "thermal characteristics" (see 5.2.2.11, 5.3.2.8, 5.4.2.11,

5.5.2.11, 5.6.2.8), paired bipolar transistors in small-signal transistors increase the "collector current ratio" (see

5.2.2.12), the switching transistor increases the "collector-emitter sustaining voltage, safe operating area, switching losses" (see

5.5.1.2.4, 5.5.1.4, 5.5.2.6, 5.5.2.7);

3) Added "resistance bias transistor" (see 5.6).

e) Test method.

1) Delete the "Test method for expressions of h-parameters of common base and common emitter" in the general test method (see the.1994 edition

Chapter IV, Section 1, 9.5), "Verification method of secondary breakdown current rating" (see Chapter IV, Section 1 of the.1994 edition

10.3), "Real part of common-emitter short-circuit input impedance Re(h11e)" (see Chapter IV, Section 1, 13.4 of the.1994 edition), and

"Benchmark testing methods" (see Chapter IV, Section 2 of the.1994 edition);

2) Added the verification method of rated value (limit value). convert collector-base voltage, emitter-base voltage and collector-emitter

The test method of extreme sustaining voltage is adjusted to the verification method of rated value (see 6.2.6, 6.2.7, 6.2.8, 6.2.11); added

"Verification of current ratings, verification of reverse bias safe operating area and short circuit safe operating area" (see 6.2);

3) Added "Test methods for switching time and switching loss when the load is inductive" (see 6.3.1, 6.3.2), "Base-emitter

The pulse method (see 6.3.7.2), "Paired bipolar transistor and resistor biased transistor" test have been added to the "extreme saturation voltage" test.

"Test method" (see 6.13.15, 6.13.16);

4) The base-emitter voltage (DC method) test circuit is changed from "common base" to "common emitter" (see 6.3.8); the load is a resistor

The signal sampling of the switching time is changed from the voltage signal to the current signal (see 6.3.12).

f) In the overview of mixing parameters, "The exception is h21c using a common collector configuration, h21c is calculated using h21e" to "Using

The exception is the common collector configuration, h21e is calculated using h21c" (see 6.3.10.1, see Chapter IV, Section 2 of the.1994 edition

9).

g) Reception and Reliability.

1) Added the criteria for acceptance after the durability test of power switching transistors and resistor bias transistors (see 7.2.3);

2) Changed the durability test method (see 7.3, see Chapter V, Section 1, 2 of the.1994 edition);

3) Added type tests and routine tests (see 7.4).

This document is modified to adopt IEC 60747-7.2019 "Semiconductor Devices Discrete Devices Part 7.Bipolar Transistors".

Compared with IEC 60747-7.2019, this document has many structural adjustments. A comparison of the structural number changes between the two documents is at a glance.

See Appendix B for the table.

There are technical differences between this document and IEC 60747-7.2019.Vertical single lines are used in the outer margins of the clauses involved.

(|) is marked. The specific technical differences and their reasons are as follows.

---Change the "reference point temperature or crystallization (Ta or Tc)" to "ambient temperature or shell temperature (Ta or Tc)". The verification method is the same as the reference point temperature or crystallization (Ta or Tc).

The temperature of the test site has nothing to do with the ambient temperature [see 6.2.10d)];

---Change "For PNP transistors, exchange the polarity of the collector voltage source (VCC) and current direction (IE, IM) in Figure 33" to

"For PNP transistors, the polarity of the collector voltage source (VCC) and current direction (IH, IM) in Figure 33 should be reversed"

Road map 33 remains consistent [see 6.3.11.3c)];

---Change "The horizontal distance deltaVEB between the two curves in Figure 34 increases with the current gradually increasing" to "With the current gradually increasing

increasing and decreasing trend"; change the horizontal axis "emitter-base voltage change (deltaVEB)" to "emitter-base voltage (VEB)" (see

6.3.11.3), in order to comply with the product change rules;

---Change "deltaVEB(1) in Figure 35 is less than deltaVEB(2)" to "deltaVEB(1) is greater than deltaVEB(2)" (see 6.3.11.3) to match the product change pattern

consistent.

The following editorial changes have been made to this document.

---Added terminology symbols (see 3.2.5, 3.2.6, 3.3.1~3.3.7, 3.3.13~3.3.21);

---Change the title of Chapter 6 "Test Methods" to "Verification Methods and Test Methods" (see Chapter 6);

---Change the title "Test Method" of 6.3 to "Test Method of Characteristics" (see 6.3).

Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.

Introduction

Semiconductor discrete devices are common basic products in the electronics industry and are the most basic units in electronic systems. Their performance and reliability directly affect

Impact on project quality and reliability. "Semiconductor Discrete Devices" is the basic standard for semiconductor discrete devices.

The parameter system, verification, test methods and quality assessment of the device play an important role and are planned to be composed of 26 parts.

---Part 1.General principles. The purpose is to specify general principles or requirements for standards applicable to various types of discrete devices.

---Part 2.Rectifier diodes. The purpose is to specify the terminology, text symbols, basic ratings and characteristics of rectifier diodes and

Product-specific requirements such as test methods.

---Part 2-1.Blank detailed specification for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A.

The purpose is to provide the basis for detailed specifications for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A.

Require.

---Part 2-2.Blank detailed regulations for rectifier diodes (including avalanche rectifier diodes) greater than 100A, environmental and case rated

Fan. The purpose is to provide detailed specifications for rectifier diodes (including avalanche rectifier diodes) rated for environments above 100A and case ratings

basic requirements.

---Part 3.Signal (including switching) diodes and adjustment diodes. The purpose is to specify signal diodes (including switching diodes

tube), voltage reference diode and voltage adjustment diode, current adjustment diode terminology, text symbols, basic ratings and characteristics

product-specific requirements such as properties and test methods.

---Part 3-1.Blank detailed specifications for signal diodes, switching diodes and controllable avalanche diodes. The purpose is to specify signal two

Basic requirements for detailed specifications of diodes, switching diodes and controllable avalanche diodes.

---Part 3-2.Signal (including switching) diodes and adjustment diodes Voltage adjustment diodes Voltage reference diodes (not included

Temperature Compensated Precision Reference Diode) Blank Detailed Specification. The purpose is to specify signal (including switching) diodes and adjustment diodes

Basics of detailed specifications for voltage reference diodes (excluding temperature compensated precision reference diodes) in tube voltage adjustment diodes

Require.

---Part 4.Microwave devices. The purpose is to specify the terminology, text symbols, basic ratings and characteristics, and testing of microwave devices.

Product specific requirements such as methods.

---Part 4-1.Detailed specifications for microwave diodes and transistors microwave field effect transistors. The purpose is to specify microwave diodes

and basic requirements for detailed specifications of microwave field effect transistors in transistors.

---Part 6.Thyristor. The purpose is to specify the terminology, text symbols, basic ratings and characteristics, and test methods of thyristors

and other product-specific requirements.

---Part 6-1.Blank detailed specifications for environment or case rated reverse blocking three-pole thyristor transistors below 100A. The purpose is

Specifies the basic requirements for detailed specifications for ambient or case rated reverse blocking three-pole thyristors below 100A.

---Part 6-2.Blank detailed specifications for environmental or case rated bidirectional three-pole thyristors below 100A. The purpose is to stipulate

Basic requirements for detailed specifications for ambient or case rated bidirectional thyristors below 100A.

---Part 6-3.Blank detailed specification for reverse blocking three-pole thyristors with current greater than 100A and environmental and case ratings. The purpose is

Basic requirements for the detailed specification of reverse blocking three-pole thyristors for environments with a specified current of 100A or above and case ratings.

---Part 7.Bipolar transistors. The purpose is to define the terminology, documentation and documentation for several types of bipolar transistors (except microwave transistors).

Product-specific requirements such as symbols, basic ratings and characteristics, and test methods.

---Part 7-1.Blank detailed specification for bipolar transistors rated for high and low frequency amplification environments. The purpose is to specify high and low frequency amplification

Basic requirements for detailed specifications of environmentally rated bipolar transistors.

---Part 7-2.Blank detailed specification for low-frequency amplifier case-rated bipolar transistors. The purpose is to specify the low frequency amplifier tube shell

Basic requirements for rated bipolar transistors detailed specification.

---Part 7-3.Blank detailed specification for bipolar transistors for switches. The purpose is to provide detailed specifications for bipolar transistors used in switches.

basic requirements of the model.

---Part 7-4.Blank detailed specification for high-frequency amplifier case-rated bipolar transistors. The purpose is to specify the amount of high-frequency amplifier tube shells

Establishes the basic requirements for detailed specifications of bipolar transistors.

---Part 8.Field Effect Transistors. The purpose is to specify the terminology, text symbols, basic ratings and

Product-specific requirements such as characteristics and test methods.

---Part 8-1.Blank detailed specifications for single-gate field effect transistors below 1GHz and 5W. The purpose is to specify 1GHz, 5W

The following detailed specifications for single-gate field effect transistors are basic requirements.

---Part 8-3.Blank detailed specification for field effect transistors for case-rated switches. The purpose is to specify the rated switch application of the tube shell.

Basic requirements for detailed specification of effect transistors.

---Part 9.Insulated Gate Bipolar Transistor (IGB T). The purpose is to define the terminology of several insulated gate bipolar transistors (IGB T),

Product-specific requirements such as text symbols, basic ratings and characteristics, and test methods.

---Part 10.General specifications for discrete devices and integrated circuits. The purpose is to stipulate the general procedure for quality assessment of semiconductor devices and stipulate

General principles of electrical characteristics test methods, climatic and mechanical tests, and durability tests.

---Part 11.Specifications for discrete devices. The purpose is to specify the quality assessment procedures required for the assessment of semiconductor discrete devices,

Contents of inspection requirements, screening sequences, sampling requirements, tests and test methods.

---Part 15.Insulated power semiconductor devices. The purpose is to specify the terminology, text symbols, basic

Product-specific requirements such as ratings and characteristics and test methods.

---Part 17.Basic and reinforced isolation electromagnetic and capacitive couplers. The purpose is to provide for basic and reinforced isolation of electromagnetic and electrical

Product-specific requirements such as terminology, text symbols, basic ratings and characteristics, and test methods for capacitive couplers.

"Semiconductor Discrete Devices" corresponds to each part of IEC 60747 to ensure consistency with international standards and realize semiconductor discrete devices

The parameter system, verification methods, testing methods, reliability evaluation, quality level, etc. of the components are in line with international standards. By formulating this document, semiconductor

Provide basis and important support for the development, production and inspection of discrete devices.

Semiconductor devices discrete devices

Part 7.Bipolar Transistors

1 Scope

This document gives the relevant requirements for the following types of bipolar transistors (except microwave transistors).

---Small signal transistors (except for switches and microwaves);

---Linear power transistors (except for switching, high frequency and microwave use);

---High-frequency power transistors for amplification and oscillation;

---Switching transistors for high-speed switches and power switches;

--- Resistor biased transistor.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations

For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to

this document.

GB/T 2900.66-2004 Electrotechnical terminology semiconductor devices and integrated circuits (IEC 60050-521.2002, IDT)

Note. GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1.General provisions (IEC 60747-1.1983, IDT)

Note. GB/T 20516-2006 Semiconductor devices Discrete devices Part 4.Microwave devices (IEC 60747-4.2001, IDT)

3 Terms and definitions

The following terms and definitions apply to this document.