GB/T 13389-1992Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon (English PDF)
掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程
GB/T 13389 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| GB/T 13389-2014 | Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon | Valid |
| GB/T 13389-1992 | Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon | Obsolete |
GB/T 13389-1992 is obsolete. It has been replaced by GB/T 13389-2014. This page sells the obsolete edition, for projects and contracts that still cite it.
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Issued by
State Bureau of Technical Supervision
Level / Type
National · Recommended
Issue date
February 19, 1992
Implementation date
October 1, 1992
Scope
GB/T 13389-1992 is the English-translated version of 掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程.
GB/T 13389-1992 is the Chinese national standard "Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon". It was issued on February 19, 1992 by the State Bureau of Technical Supervision, and took effect on October 1, 1992. It is obsolete: it has been replaced by GB/T 13389-2014.
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Document preview — GB/T 13389-1992
National Standard of the People's Republic of China
Issued by: State Bureau of Technical Supervision
Contents
- Document data
1 Document data
Sector: National standard (Recommended).
Issuing body: State Bureau of Technical Supervision.
Date of issue: 1992-02-19.
Date of implementation: 1992-10-01.
Status: obsolete, replaced by GB/T 13389-2014.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 44334-2024Silicon epitaxial wafers with buried layers
- GB/T 29057-2023Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
- GB/T 42907-2023Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers—Noncontact eddy-current sensor
- GB/T 14139-2019Silicon epitaxial wafers
- GB/T 26068-2018Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
- GB/T 4060-2018Test method for boron content in polycrystalline silicon by vacuum zone-melting method
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GB/T 13389-1992
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