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GB/T 43088-2023Microbeam analysis—Analytical electron microscopy—Measurement of the dislocation density in thin metals (English PDF)

微束分析分析电子显微术金属薄晶体试样中位错密度的测定方法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

September 7, 2023

Implementation date

April 1, 2024

Scope

GB/T 43088-2023 is the English-translated version of 微束分析分析电子显微术金属薄晶体试样中位错密度的测定方法.

This document specifies the measurement of dislocation density in thin metal specimens by transmission electron microscopy: the equipment, the specimens, the measurement methods, the processing of the data, the uncertainty of the result and the test report.

The document applies to the determination of dislocation densities within a grain up to 1×10^1^5 m^-², and to the measurement of the dislocation density within a single grain in thin metal crystal specimens tens to hundreds of nanometres thick.

Dislocations escape from the surface during specimen preparation, so the thinner the specimen the larger the escaped fraction and the greater the effect on accuracy; and where dislocation pile-ups cannot be resolved, the measured density within the grain may be far below the true density in the specimen.

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Document preview — GB/T 43088-2023

National Standard of the People's Republic of China

ICS: 71.040.50
Classification: G 04

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Preface
1 Scope
2 Normative reference documents
3 Terms and Definitions
4 symbol
5 Method Overview
6 device
7 Sample
8 Determination method
9 Data Processing
10 Uncertainty of measurement results
11 Test report
Appendix A (informative) Measurement example of dislocation density in small deformation annealed IF steel
Appendix B (informative) Example of measurement of dislocation density in deformed aluminum alloy
Reference

Foreword

This document complies with the regulations of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Custom drafting.

1 Scope

This document specifies the equipment, specimens, measurement methods, and data for measuring dislocation density in thin metal crystals using a transmission electron microscope (TEM). Data processing, uncertainty of measurement results and test reports.

This document is applicable to the determination of dislocation density within grains not higher than 1 x 10^15m-2.Also suitable for measuring tens to hundreds of nanometers thick The dislocation density within a single grain in a metallic thin crystal sample.

Note 1. Dislocations will escape from the surface when the sample is prepared. When the thickness of the thin crystal sample is small, the proportion of escaped dislocations is relatively large, which affects the measurement accuracy. larger.

Note 2. When the dislocation accumulation cannot be identified, the dislocation proportion of the accumulation is relatively large, and the dislocation density in the grain may be much lower than the actual dislocation density in the sample.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 18907 Microbeam analysis Electron microscopy Transmission electron microscopy Selected electron diffraction analysis method

GB/T 20724 Converging beam electron diffraction method for determination of thin crystal thickness using microbeam analysis

GB/T 40300 Analytical electron microscopy terminology for microbeam analysis

3 Terms and definitions

The following terms and definitions as defined in GB/T 20724 and GB/T 40300 apply to this document.

3.1 Dislocation density

The total length of dislocation lines contained in a thin crystal sample per unit volume.

3.2 Film thickness foil thickness

The thickness of the thin crystal specimen at the location where the dislocation morphology was photographed.

3.3 Intercept method intersect method

Cover the grid that meets the requirements on the photo of the dislocation morphology to be measured, and count the number of intersection points with the dislocation lines.

3.4 Two-beam approximation

Approximate conditions for electron diffraction analysis and microscopic image calculation assuming that only direct waves and one diffracted wave are excited. [Source: GB/T 20724-2021,3.11]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 21 pages — is available in the English PDF.

Referenced standards

Normative references

Similar standards

GB/T 47182-2026|GB/T 47186-2026|GB/T 43682-2024|GB/T 43087-2023|GB/T 43341-2023|GB/Z 41259-2022

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