GB/T 20724-2021Microbeam analysis—Method of thickness measurement for thin crystals by convergent beam electron diffraction (English PDF)
微束分析 薄晶体厚度的会聚束电子衍射测定方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 31, 2021
Implementation date
July 1, 2022
Scope
GB/T 20724-2021 is the English-translated version of 微束分析 薄晶体厚度的会聚束电子衍射测定方法.
GB/T 20724-2021 describes how the thickness of a thin crystal is measured by convergent beam electron diffraction in a transmission or scanning transmission electron microscope.
It gives the principle, the instrument and its settings, the specimen, the recording of the diffraction pattern, the measurement of the fringes and the calculation of the thickness, with the sources of uncertainty and the report.
It applies to thin crystal specimens from tens of nanometres to hundreds of nanometres thick. Electron microscopy laboratories and semiconductor and materials researchers use it.
It replaces GB/T 20724-2006, was issued on 31 December 2021 and has applied since 1 July 2022.
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Document preview — GB/T 20724-2021
National Standard of the People's Republic of China
- ICS
- 71.040.99
- Classification
- N 53
- Replacing
- GB/T 20724-2006
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- Introduction
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Method overview
- 5 Instruments
- 5.1 Main equipment
- 5.2 Data recording and measurement methods
- 6 Sample
- 6.1 General requirements
- 6.2 Thin Crystal Specimens
- 6.3 Extraction of replicas or powder samples
- 7 Experimental Step
- 7.1 Instrument Preparation
- 7.2 Obtaining the double-beam converging beam electron diffraction pattern
- 7.3 Data Measurement and Calculation
- 8 Uncertainty of measurement results
- 9 Experiment report
- Appendix A (Informative) Example of Converging Beam Electron Diffraction Measurement of Thin Silicon Crystal Thickness
- A:1 Sample
- A:2 Experimental Conditions and Parameters
- A:3 Experimental Results and Data Analysis
- A:4 Measurement results
- Reference
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1. Structure and Drafting Rules of Standardization Documents" drafted.
This document replaces GB/T 20724-2006 "Method for Determination of Thickness of Thin Crystals by Converging Beam Electron Diffraction", and GB/T 20724-2006 In contrast, except for structural adjustments and editorial changes, the main technical changes are as follows:
a) Added some terms and definitions (see Chapter 3);
b) Added requirements for instrument preparation (see 7.1);
c) Changed the steps for experimental determination in TEM mode (see 7.2.1, 7.2 of the:2006 edition);
d) An example diagram of the selected area electron diffraction pattern and its index calibration has been added (see Figure 2 in 7.2.1);
e) Added the STEM mode for acquiring convergent beam diffraction patterns (see 7.2.2);
f) The method of data measurement and calculation has been changed (see 7.3, 7.6 of the:2006 edition);
g) Changed the method of finding the thickness of thin crystals by linear fitting method (see 7.3.3, 7.3.4, Chapter 8 of the:2006 edition);
h) The requirements for the format of the experimental report have been deleted (see Chapter 9 of the:2006 edition);
i) added uncertainty analysis (see Chapter 8);
j) Changed the requirements for the content of the experimental report (see Chapter 9, Chapter 9 of the:2006 edition).
Introduction
The research and development of a large number of new materials, as well as the evaluation and control of performance characteristics, require microstructure characteristics on the micro and nano scales.
Carry out analytical determination, especially the determination of the thickness of thin crystal samples or nano-scale powders, particles and other materials. Methods for measuring the thickness of thin crystals are Several, current Converging Beam Electron Diffraction (CBED) methods can measure the relative standard deviation of the thickness of thin crystals up to To about 2%, it is a very important method in material analysis. At present, our country is analyzing and testing in scientific research institutes, colleges and universities, large enterprises and various provinces and cities.
The laboratories in the test center and other places are equipped with many transmission electron microscopes/scanning transmission electron microscopes (TEM/STEM), electron diffraction techniques.
It is widely used in the analysis and research of various materials, especially new materials and nanomaterials.
In order to standardize the method of applying the converging beam electron diffraction technique to determine the thickness of thin crystals of materials, GB/T 20724- In:2006, the standard has been implemented for more than ten years. During this period, the research level of materials, analysis technology and instruments and equipment have been greatly developed and improved.
In particular, the development and application of new materials puts forward higher requirements for microbeam analysis methods. In order to adapt to the development of my country's science and technology and industrialization Trends demand for materials science and microscopic analysis, GB/T 20724-2006 has been revised.
1 Scope
This document describes Converged Beam Electron Diffraction for Thickness Measurement of Thin Crystal Specimens Using Transmission Electron Microscopy/Scanning Transmission Electron Microscopy method.
This document is suitable for the determination of thin crystal samples with linearity ranging from tens of nanometers to hundreds of micrometers and thicknesses in the range of tens of nanometers to hundreds of nanometers. thickness.
Note: Since the thickness of thin specimens for transmission electron microscopy is often non-uniform, what is measured by the method of convergent beam diffraction is the local thickness of the specimen illuminated by the electron beam.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.
GB/T 18907-2013 Microbeam Analysis and Analysis Electron Microscopy Transmission Electron Microscope Selected Area Electron Diffraction Analysis Method
GB/T 27418-2017 Evaluation and representation of measurement uncertainty
ISO 15932:2013 Microbeam analysis-Analytical electron microscopy terminology (Microbeamanalysis-Analyticalelectron microscopy-Vocabulary)
3 Terms and Definitions ISO 15932:2013 and the following
terms and definitions apply to this document.
3.1 convergent beam electron diffraction; CBED
A technique for obtaining diffraction patterns using a converging electron beam.
Note: Due to the large aperture angle of the incident electron beam (usually greater than 10-3rad), the diffraction pattern is composed of a diffraction disc with a certain size and a direct disc. A fringe contrast occurs within the diffraction disk. [Source: ISO 15932:2013, 8.3.6, with modifications]
3.2 Thincrystalspecimen
It can be placed on the sample stage of the transmission electron microscope, and the incident electron beam can penetrate the crystal sample.
3.3 Selected Area Electron Diffractionselectedareaelectrondiffraction;SAED
In transmission electron microscopy, a diffraction pattern is obtained by selecting a sample area with a selective aperture located in front of the intermediate mirror. [Source: ISO 15932:2013, 8.3.4, with modifications]
3.4 Bragg diffraction
Diffraction of an incident electron beam at specific angles relative to the atomic plane of the crystal due to constructive interference. END. Draft Version (GB/T 20724-2021)
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 21 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 18907-2013Microbeam analysis -- Analytical electron microscopy -- Selected-area electron diffraction analysis using a transmission electron microscope
- GB/T 27418-2017Guide to the evaluation and expression of uncertainty in measurement
ISO 15932:2013
Cited by
- GB/T 43748-2024Microbeam analysis—Transmission electron microscopy—Method for measuring the thickness of functional thin films in integrated circuit chips
- GB/T 43883-2024Microbeam analysis - Analytical electron microscopy - Method for determining the number density of nanoparticles in a metal
- GB/T 43088-2023Microbeam analysis—Analytical electron microscopy—Measurement of the dislocation density in thin metals
Similar standards
Editions of GB/T 20724
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 20724-2021 | Microbeam analysis—Method of thickness measurement for thin crystals by convergent beam electron diffraction | current edition | Current |
| GB/T 20724-2006 | Microbeam analysis—Method of thickness measurement for thin crystals by convergent beam electron diffraction | previous edition | Superseded |
This page sells the current edition, GB/T 20724-2021. Earlier editions are listed for reference only.
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Related Standards
GB/T 18907-2013 — Microbeam analysis -- Analytical electron microscopy -- Selected-area electron diffraction analysis using a transmission electron microscope
GB/T 27418-2017 — Guide to the evaluation and expression of uncertainty in measurement
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