GB/T 43748-2024Microbeam analysis—Transmission electron microscopy—Method for measuring the thickness of functional thin films in integrated circuit chips (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

Introduction

Functional thin film materials and performance are very important basic process technologies in the advanced integrated circuit (IC) manufacturing process.

In the Si-based chips, GaN or SiC-based wide bandgap semiconductor power and RF device chips, micro-light-emitting diodes (Micro- In micro-nano semiconductor components such as LEDs, various functional thin film materials have the characteristics of complex microstructure and diverse chemical composition.

Integrated circuit technology has entered the era of nanotechnology. With the advent of the intelligent society and the popularization of 5G technology, mobile communications and the Internet of Things will The emerging integrated circuit industry prospects such as the Internet of Things, smart health care, industrial Internet of Things and smart driving are driving the intelligent development of advanced integrated circuit chips.

The technological process of digitization, functionalization, and miniaturization has become an important trend and feature of the current and future technological development of the semiconductor industry.

The multifunctionality of the device creates unique properties of more new materials and new structures of future integrated circuit devices.

Precision and standardized analysis and testing technologies such as structure, high-purity materials, micro-control, and interface engineering will become important technologies for the healthy development of the semiconductor industry in the future.

Nano-scale multi-layer functional thin film materials and their performance are very important basic process technologies in the manufacturing process of ultra-large-scale integrated circuits.

It is particularly important to accurately obtain the thickness of nano-scale multi-layer functional thin films. The unique high spatial resolution of transmission electron microscopy has been This makes it the most important technology for analyzing and detecting microstructure and microchemical composition at the nanoscale.

Under the premise of developing various semiconductor chip industries, laboratories in scientific research institutes, universities, large enterprises and local analysis and testing centers have Equipped with a large number of transmission electron microscopes/scanning transmission electron microscopes (TEM/STEM), transmission electron microscopy technology has been widely used in semi- Analysis and research of nanoscale materials in the development/production of conductor devices.

At present, there is no relevant standard for measuring the thickness of multifunctional film layers on integrated circuit chips, and the development of integrated circuit chips has been severely affected.

It is of great significance to formulate new national standards and regulate the determination method of the thickness of the functional thin film layer of integrated circuit chips.

1 Scope

This document specifies the use of transmission electron microscopy/scanning transmission electron microscopy (TEM/STEM) to determine the functional Thin film layer thickness method.

This document is applicable to the determination of functional thin film layers in integrated circuit chips with a thickness of more than a few nanometers.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document.

For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to this document.

GB/T 8170 Rules for rounding off values and expression and determination of limit values

GB/T 18907-2013 Microbeam analysis Electron microscopy Transmission electron microscopy Selected area electron diffraction analysis method

GB/T 20724-2021 Microbeam analysis of thin crystal thickness by convergent beam electron diffraction

GB/T 30544.4 Nanotechnology Terminology Part 4: Nanostructured Materials

GB/T 40300-2021 Terminology of Microbeam Analysis Electron Microscopy

JY/T 0583-2020 General rules for analysis methods of focused ion beam systems

3 Terms and definitions

GB/T 18907-2013, GB/T 20724-2021, GB/T 30544.4, GB/T 40300-2021 and JY/T 0583-2020 The following defined terms and definitions apply to this document.

3.3 A technique in which a selective aperture located in front of the intermediate mirror is used to select a sample area for diffraction. [Source: GB/T 40300-2021, 10.3.4]