GB/T 43682-2024Nanotechnology—Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness (English PDF)
纳米技术 亚纳米厚度石墨烯薄膜载流子迁移率及方块电阻测量方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
March 15, 2024
Implementation date
July 1, 2024
Scope
GB/T 43682-2024 is the English-translated version of 纳米技术 亚纳米厚度石墨烯薄膜载流子迁移率及方块电阻测量方法.
GB/T 43682-2024 describes how to measure the carrier mobility and sheet resistance of sub-nanometre graphene films, which clause 3 defines as films less than 1 nm thick.
It covers the measurement principle, the equipment, the preparation of Hall devices and the measurement procedure, the calculation method, the analysis and calculation of uncertainty and the measurement report, with an informative annex on graphene samples grown by chemical vapour deposition.
Its terms include the Hall effect, resistivity, the Hall electric field, the Hall coefficient and the aspect ratio of a Hall device. Clause 1 states that it applies to films whose length and width are greater than 100 µm.
Its introduction states that it aims to standardise the shape, electrode type and electrode contact of graphene Hall devices. Issued on 15 March 2024, it has applied since 1 July 2024.
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Document preview — GB/T 43682-2024
National Standard of the People's Republic of China
- ICS
- 71.040.50
- Classification
- A 42
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- Introduction
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Principle
- 5 Equipment
- 6 Device preparation and measurement process
- 7 Calculation method
- 8 Analysis and calculation of uncertainty
- 9 Measurement Report
- Appendix A (Informative) Graphene samples grown by chemical vapor deposition (CVD)
1 Scope
This paper describes the principle of sample preparation and carrier mobility and sheet resistance measurements of Hall devices in sub-nanometer thick graphene films.
The instrument includes the principles, equipment, device preparation and measurement process, calculation methods, analysis and calculation of uncertainty, and measurement reports.
This document applies to the carrier mobility of sub-nanometer thick graphene films with length and width greater than 100 µm. (< 104cm²/Vs) and sheet resistance measurements.
2 Normative references
This document has no normative references.
3 Terms and definitions
The following terms and definitions apply to this document.
3.1 Graphene film of sub-nanometer thickness
Graphene film with a thickness of less than 1nm.
3.2 Hall Effect
If a magnetic field is applied to a sample with current flowing through it, a transverse potential difference is generated in the direction perpendicular to the current and magnetic field due to the influence of the Lorentz force. Phenomenon. [Source: GB/T 14264-2009, 3.111, modified]
3.3 Resistivity
The ratio of the potential gradient parallel to the current flow in a material to the current density.
Note: Resistivity is a directly measurable material parameter. [Source: GB/T 4326-2006, 2.1, modified]
3.4 Hall electric field
When a sub-nanometer graphene film (3.1) sample is simultaneously subjected to a mutually perpendicular electric field and a magnetic field, the carriers in the sample will be The sample is deflected in three mutually perpendicular directions, establishing a transverse electric field on both sides of the sample. [Source: GB/T 4326-2006, 2.2, modified]
3.5 Hall coefficient
The ratio of the Hall electric field (3.4) to the product of current density and magnetic flux density. [Source: GB/T 4326-2006, 2.2, modified]
3.6 carrier mobility
The ratio of the absolute value of the Hall coefficient (3.5) to the resistivity.
3.7 Aspect ratio
The ratio of the width (w) to the length (l) of a Hall device.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.
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