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GB/T 36646-2018Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy (English PDF)

制备氮化物半导体材料用氢化物气相外延设备

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

September 17, 2018

Implementation date

January 1, 2019

Scope

GB/T 36646-2018 is the English-translated version of 制备氮化物半导体材料用氢化物气相外延设备.

GB/T 36646-2018 is the Chinese national product standard for hydride vapor phase epitaxy (HVPE) equipment used to prepare nitride semiconductor materials.

It sets out how the equipment is classified and given a model mark, and the working conditions it needs: power supply, ambient temperature, relative humidity, atmospheric pressure, cleanroom level, cooling water and power gas.

Its requirements and matching test methods cover the pressure rise rate, the gas transport system, the electrical system, the control software, machine performance and safety protection, followed by type and factory inspection rules and the marking, packing, transport and storage.

Annex A gives the method for measuring the thickness of nitride epitaxial material. It applies to HVPE equipment for materials with a diameter of 50.8 mm to 152.4 mm. It was issued on 17 September 2018 and has applied since 1 January 2019.

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Document preview — GB/T 36646-2018

National Standard of the People's Republic of China

ICS: 31.220
Classification: L 95

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Foreword
1 Scope
2 Normative references
3 Terms and Definitions
4 Product Classification and Marking
4.1 Classification
4.2 Model Mark
5 Working conditions
5.1 Power supply
5.2 Ambient temperature
5.3 Relative humidity
5.4 Atmospheric pressure
5.5 Cleanroom Level
5.6 Cooling water
5.7 Power gas
6 Requirements
6.1 Pressure rise rate
6.2 Gas Transport System
6.3 Electrical System
6.4 Control Software
6.5 Machine performance
6.6 Security
7 Detection method
7.1 Pressure rise rate test
7.2 Gas transport system testing
7.3 Electrical system testing
7.4 Control Software Detection
7.5 Machine performance test
7.6 Security Protection Test
8 Inspection rules
8.1 Inspection Category
8.2 Type test
8.3 Factory inspection
8.4 Decision Rule
9 Marking, packaging, transport and storage
9.1 Mark
9.2 Packing
9.3 Transportation
9.4 Storage
Appendix A (Normative) Nitride Epitaxial Material Thickness Measurement

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

1 Scope

This standard specifies the product classification for the preparation of hydride vapor phase epitaxy equipment for nitride semiconductor materials (hereinafter referred to as "HVPE equipment").

Classes and markings, working conditions, requirements, testing methods, inspection rules, marking, packaging, transportation and storage.

This standard applies to the preparation of HVPE equipment with a diameter of 50.8mm ~ 152.4mm nitride semiconductor materials.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 191-2008 packaging storage and transportation icon

GB/T 3768-2017 Acoustic sound pressure method for the determination of noise source sound power level and sound energy level using the envelope measurement surface above the reflective surface Simple method

GB/T 5080.7-1986 Equipment reliability test Verification test for failure rate and mean time between failures under the assumption of constant failure rate Inspection plan

GB 5226.1-2008 Mechanical electrical safety machinery and electrical equipment - Part 1. General technical conditions

GB/T 6388-1986 Transport packaging receipt and delivery mark

GB/T 14264-2009 Semiconductor material terminology

GB 50073-2013 clean factory design specification

GB/T 50087-2013 Industrial Enterprise Noise Control Design Specification

GB 50646-2011 Special Gas System Engineering Technical Specification

SJ/T 37-1996 Modeling and naming method for special equipment for electronic industry

3 Terms and definitions

The following terms and definitions as defined in GB/T 14264-2009 and GB 50646-2011 apply to this document.

3.1 Hydride vapor phase epitaxy

Among the chemical components required for epitaxial growth, at least one vapor phase epitaxy of a hydride is employed.

3.2 Reaction chamber

A chamber for performing an epitaxial process on the substrate sheet.

3.3 Load capacity

The maximum number of sheets of a substrate having a diameter of 50.8 mm can be arranged in a single layer on the carrier tray in the reaction chamber.

Note: The diameter of the 2-inch substrate is 50.8 mm.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 37 pages — is available in the English PDF.

Referenced standards

Normative references

GB 5226.1-2008 · SJ/T 37-1996

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