GB/T 36357-2018Technical specification for middle power light-emitting diode chips (English PDF)
中功率半导体发光二极管芯片技术规范
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
June 7, 2018
Implementation date
January 1, 2019
Scope
GB/T 36357-2018 is the English-translated version of 中功率半导体发光二极管芯片技术规范.
GB/T 36357-2018 is the technical specification for medium power semiconductor light-emitting diode chips. It sets the general requirements, including how the standard relates to the detailed specification of a chip, the requirements for materials and structure, and the rest of the product requirements, and gives the matching test methods.
It then lays down the inspection rules and the rules for packaging, transport and storage. Normative annexes cover the visual inspection of the chips and the classification and marking of electrostatic discharge sensitivity in human body and machine models.
Test methods draw on GB/T 2423 environmental tests, GB/T 4937.1, SJ/T 11394, SJ/T 11399 and the IEC 60749 series. It applies to all medium power semiconductor light-emitting diode chips. It was issued on 7 June 2018 and has applied since 1 January 2019.
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Document preview — GB/T 36357-2018
National Standard of the People's Republic of China
- ICS
- 31.260
- Classification
- L 53
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Requirements
- 4 Test method
- 5 Inspection rules
- 6 Packaging, transport and storage
- Appendix A (Normative Appendix) Visual inspection of power semiconductor light-emitting diode chips
- Appendix B (Normative Appendix) Electrostatic Discharge Sensitivity Classification and Marking for Human Body Mode and Machine Mode
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies the technical requirements, inspection methods and inspection rules for medium power semiconductor light-emitting diode chip products (hereinafter referred to as chips). Then, packaging, transportation and storage.
This standard applies to medium power semiconductor light-emitting diode chips.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 2423.4-2008 Environmental testing of electrical and electronic products - Part 2. Test methods Test Db. alternating heat (12h) 12h cycle)
GB/T 2423.15-2008 Environmental testing for electric and electronic products - Part 2. Test methods Tests Ga and guides. steady state plus speed
GB/T 2423.22-2012 Environmental testing - Part 2. Test methods Test N. Temperature change
GB/T 4589.1-2006 Part 10. General specification for discrete devices and integrated circuits
GB/T 4937.1-2006 Methods of mechanical and climatic testing of semiconductor devices - Part 1. General
SJ/T 11394-2009 Semiconductor Light Emitting Diode Test Method
SJ/T 11399-2009 Semiconductor light-emitting diode chip test method
IEC 60749 (all parts) Semiconductor device mechanical and climatic test methods (Semiconductor devices-Mechanical Andclimatictestmethods)
Semiconductors - Mechanical and climatic test methods - Part 19. Chip shear strength (Semicon-ductordevices-Mechanicalandclimatictestmethods-Part 19: Dieshearstrength)
Semiconductors - Mechanical and climatic test methods - Part 22. Bonding strength (Semiconductor devices-Mechanicalandclimatictestmethods-Part 22: Bondstrength)
3 Requirements
3.1 General
3.1.1 Priority
The chip shall comply with the requirements of this standard and related detailed specifications. When the requirements of this standard are inconsistent with the relevant detailed specifications, The fine specification shall prevail.
3.1.2 Reference to detailed specifications
When the term "in accordance with the provisions" is used in this standard and the referenced documents are not specified, the relevant detailed specifications are used.
3.2 Materials and structures
3.2.1 Materials
Semiconductor materials that enable the chip to meet the performance requirements of this standard shall be used, and the materials used shall be free from scratches under the specified test conditions.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 2423.4-2008Environmental testing for electric and electronic products - Part 2: Test method - Test Db: Damp heat, cyclic (12 h + 12 h cycle)
- GB/T 2423.15-2008Environmental testing for electric and electronic products - Part 2: Test methods - Test Ga and guidance: Acceleration, steady
- GB/T 2423.22-2012Environmental testing - Part 2: Test methods - Test N: Change of temperature
- GB/T 4589.1-2006Semiconductor devices -- Part 10: Generic specification for discrete devices and integrated circuits
- GB/T 4937.1-2006Semiconductor devices -- Mechanical and climatic test methods -- Part 1: General
- SJ/T 11394-2009Measure methods of semiconductor light emitting diodes
IEC 60749
Similar standards
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Related Standards
GB/T 2423.15-2008 — Environmental testing for electric and electronic products - Part 2: Test methods - Test Ga and guidance: Acceleration, steady
GB/T 2423.22-2012 — Environmental testing - Part 2: Test methods - Test N: Change of temperature
GB/T 2423.4-2008 — Environmental testing for electric and electronic products - Part 2: Test method - Test Db: Damp heat, cyclic (12 h + 12 h cycle)
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GB/T 36357-2018
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