GB/T 28275-2012Silicon-based MEMS fabrication technology - Specification for KOH etch process (English PDF)
硅基MEMS制造技术 氢氧化钾腐蚀工艺规范
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
May 11, 2012
Implementation date
December 1, 2012
Scope
GB/T 28275-2012 is the English-translated version of 硅基MEMS制造技术 氢氧化钾腐蚀工艺规范.
GB/T 28275-2012 is the KOH etch process specification within silicon-based MEMS fabrication technology. Clause 1 states that the standard specifies the process requirements to be followed when MEMS devices are fabricated using a potassium hydroxide etch process, and that it applies to the KOH etching process and its management.
Clause 2 cites GB/T 26111-2010, GB/T 1031-2009 and GB 50073-2001.
Clause 3 takes the definitions of GB/T 26111-2010 and adds five entries: cleanliness; the cleanroom, a room in which the airborne particle concentration is controlled, whose construction and use are meant to reduce the generation and retention of indoor particles and in which temperature, humidity, pressure and other parameters are controlled as required; wet etching, quoted from definition 3.5.17 of GB/T 26111-2010 as the technology that etches a device structure or a thin film with a solution able to react chemically with the material to be engraved, with a note that the mask leaves exposed only the part to be removed and that the process divides into isotropic and anisotropic etching; and two further entries printed alike as etchant in English, one for the chemical substance with a corrosive effect and one for the solution that contains it.
The draft shows only the foreword and clauses 1 to 3 and carries no table of contents, so the later clauses of the standard cannot be described.
The foreword states that the standard is administered by the national MEMS technology standardization technical committee (SAC/TC336) and that the drafting bodies include the Shanghai Institute of Microsystem and Information Technology, Chongqing University and Southeast University. It was issued on 2012-05-11 and has applied since 2012-12-01.
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Document preview — GB/T 28275-2012
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 55
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions GB/T 26111-2010 defined and the following
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
1 Scope
This standard specifies the use of potassium hydroxide etch process performed MEMS device fabrication process requirements to be followed.
This standard applies to KOH etching process and management.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this document. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms
GB/T 1031-2009 Geometrical product specifications (GPS) Surface texture Profile method of surface roughness parameters and their values
GB 50073-2001 clean plant design specifications
3 Terms and Definitions
GB/T 26111-2010 defined and the following terms and definitions apply to this document.
3.1 Cleanliness
Number of Units volume of air in a particle size to distinguish cleanliness.
3.2 Cleanroom
Airborne particle concentration controlled room. Its construction and use should be induced to reduce indoor, generation and retention of particles. Other indoor Relevant parameters such as temperature, humidity, pressure, etc. as required for control.
3.3 Wet etching
Utilization of material to be engraved can produce a chemical reaction solution or a thin film device structure etching technology.
Note: during wet etching, etching of part of the mask will not need to expose the rest, and then the material is immersed in the reaction solution can be divided to each. Isotropic etching and anisotropic etching. [GB/T 26111-2010, the definition 3.5.17]
3.4 Etchant escharotic
Corrosive effect of chemical substances.
3.5 Etchant
The solution containing etchant.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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