GB/T 47725-2026Micro-electromechanical systems (MEMS) technology - Requirements for the reliability evaluation of three-dimensional through-silicon via structures (English PDF)

6.1.1 DC Resistance

6.1.1.1 Evaluation of DC Resistance DC resistance can be used to evaluate the quality of TSV interconnects. Due to the excellent conductivity of metallic materials, the DC resistance of TSVs is very small. When defects exist in a TSV, its DC resistance will increase, and it may even cause an open circuit. The evaluation requirements for the DC resistance of a TSV three-dimensional structure are shown in Table 2.

6.1.1.2 Reporting Requirements The report should include at least the following.

a) Name and address of the manufacturing unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) DC resistance value;

g) Failure analysis report (if any).

6.1.2 Leakage Current

6.1.2.1 Leakage Current Evaluation Leakage current can be used to evaluate the insulation of the TSV sidewall dielectric layer. The main indicators of dielectric layer integrity are dielectric layer continuity, absence of pinholes, and... Uniform thickness. When pinholes appear in the dielectric layer, the leakage current of the TSV to the substrate may increase, or even cause a short circuit. Theoretically, the TSV and the substrate... The resistance between the substrates should be infinite, and the leakage current should be zero. However, when pinholes appear in the TSV dielectric layer, the resistance decreases, and the leakage current increases. The requirements for evaluating leakage current in three-dimensional structures are shown in Table 3.

6.1.2.2 Reporting Requirements The report should include at least the following.

a) Name and address of the manufacturing unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) IV test curve;

g) Failure analysis report (if any).

6.1.3 S-parameters

6.1.3.1 Evaluation of S-parameters S-parameters can be used to evaluate the quality of TSV radio frequency transmission. A network analyzer, combined with a probe station testing system, is used to perform three-dimensional TSV testing. S-parameter measurements of the structure show that a larger aspect ratio reduces the constraints on the layout design required for TSV impedance matching, and improves the bandwidth, insertion loss, and inversion resistance of the TSV. The better the characteristics such as radiation loss and isolation, the better. The evaluation requirements for the S-parameters of the TSV three-dimensional structure are shown in Table 4. Figure

6.1.4 Nonlinearity

6.1.4.1 Nonlinear Evaluation Nonlinearity can be used to evaluate the quality of high-power radio frequency transmission. This involves using an RF power source, a spectrum analyzer, and an attenuator (if needed), combined with... A probe station testing system is used to perform nonlinear measurements on the three-dimensional structure of a TSV. For the same size, the higher the quality of the TSV metal layer, the more linear the RF transmission. The better the degree of polarization, the stronger the power tolerance and the higher the P1dB; when there are defects in the metal layer, the TSV vertical interconnect exhibits nonlinearity in high-power RF transmission. The more pronounced the thermal effect, the lower the P1dB. The nonlinear evaluation requirements for TSV three-dimensional structures are shown in Table 5.

6.1.4.2 Reporting Requirements The report should include at least the following.

a) Name and address of the manufacturing unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Test temperature;

e) Sample quantity and distribution;

f) Test methods, criteria, test procedures and results, and test duration;

h) Failure analysis report (if any).

6.2.1 Visual inspection

6.2.1.1 Visual Inspection Evaluation Visual inspection can be used to evaluate the appearance and manufacturing quality of TSVs. Failures in TSV three-dimensional structures are typically caused by physical damage, such as. TSV internal wall metal bulges, defects, silicon wafer cracks, etc. These damages and defects can be detected through visual inspection using microscopy. TSV three-dimensional structure exterior The evaluation requirements for microscopic examination are shown in Table 6.

6.2.1.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.2.2 X-ray examination

6.2.2.1 Evaluation of X-ray examination X-ray inspection can be used to evaluate the internal process quality of TSVs. It can also be used to inspect internal defects in TSVs that are filled or partially filled with metal, such as filler metal. If the structure is hollow or has a broken metal component, and cannot be detected by visual microscopy, it can be evaluated using X-ray imaging. TSV three-dimensional structure X-ray The evaluation requirements for radiographic inspection are shown in Table 7.

6.2.2.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.2.3 Sample preparation and microscopic examination

6.2.3.1 Sample preparation and microscopic evaluation Microscopic examination of samples can be used to evaluate the internal manufacturing quality of TSVs. Failure of TSV three-dimensional structures is related to inherent internal structural defects, for example... For example, there may be discontinuities in the TSV insulating layer or obvious gaps at the bonding interfaces of stacked TSV wafers. These defects can be evaluated through sample preparation and microscopic inspection. Price. The requirements for TSV three-dimensional structure sample preparation and microscopic examination evaluation are shown in Table 8.

6.2.3.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.3.1 Temperature Cycling

6.3.1.1 Temperature Cycling Evaluation The purpose of temperature cycling is to determine the ability of TSV three-dimensional structure products to withstand high and low temperatures, and the effect of alternating high and low temperatures on the product. The impact on the product. Temperature changes may worsen the condition of internal process defects or cause cracks at stress mismatch locations, thus leading to... This can lead to product malfunction, chip cracking, or separation of multilayer structures. Temperature cycling evaluation requirements are shown in Table 9.

6.3.1.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.3.2 Stability Baking

6.3.2.1 Stability evaluation during baking The purpose of stability baking is to determine the chip's ability to be used, transported, or stored in high-temperature environments without applying electrical stress. The requirements for stability baking reliability evaluation are shown in Table 10.

6.3.2.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.3.3 Steady-state lifetime

6.3.3.1 Steady-state lifetime assessment The purpose of steady-state lifetime evaluation is to assess the effects of time, bias conditions, and temperature on the three-dimensional structure of the TSV. Steady-state lifetime evaluation requirements are detailed below. Table 11.

6.3.3.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Sample quantity and distribution;

d) Testing instruments. model, name, and serial number;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.3.4 Steady-state damp heat

6.3.4.1 Steady-state damp heat assessment The purpose of steady-state damp heat evaluation is to assess the effects of bias temperature and humidity on the three-dimensional structure of TSVs in unsealed devices. Steady-state damp heat evaluation requires... Please refer to Table 12.

6.3.4.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.4.1 Time-dependent dielectric breakdown (TDDB) test of dielectric layer

6.4.1.1 Evaluation of Time-Related Dielectric Breakdown Lifetime of Dielectric Layer The purpose of TDDB is to evaluate the effects of time, electric field conditions, and temperature on the three-dimensional structure of TSV. The time-dependent dielectric of the dielectric layer... The breakdown evaluation requirements are shown in Table 13.

6.4.1.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.4.2 Electromigration Test

6.4.2.1 Electromigration lifetime assessment The purpose of electromigration lifetime testing is to evaluate the effects of time, current conditions, and temperature on the three-dimensional structure of the TSV. Electromigration evaluation requires... See Table 14.

6.4.2.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Testing instruments. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.5.1 Sweep Frequency Vibration

6.5.1.1 Evaluation of sweep frequency vibration The purpose of swept-frequency vibration is to determine the effect of vibration on the three-dimensional structure of the TSV within a specified frequency range. Sweeped-frequency vibration evaluation requires... See Table 15.

6.5.2 Mechanical shock

6.5.2.1 Mechanical Impact Evaluation The purpose of mechanical shock testing is to evaluate whether the TSV three-dimensional structure is suitable for electronic devices that require exposure to moderately severe shocks. Impacts can disrupt operational characteristics or cause additional vibrations, resulting in structural damage. Mechanical impact evaluation requirements are shown in Table 16.

6.5.2.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.5.3 Constant Acceleration

6.5.3.1 Evaluation of constant acceleration The purpose of constant acceleration is to evaluate the structural adaptability and performance stability of the TSV three-dimensional structure under steady-state acceleration conditions. The acceleration evaluation requirements are shown in Table 17.

6.5.3.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).

6.6.1 Wire Bond Strength

6.6.1.1 Evaluation of Wire Bond Strength The purpose of wire bond strength testing is to evaluate bond strength or determine whether the bond strength meets specified requirements. Insufficient metal layer adhesion. Delamination of the metal structure may lead to insufficient wire bonding strength. Experiments can be conducted to verify the quality of the metal layer at the orifice of the TSV three-dimensional structure. The completion status of metallization processes such as evaporation, sputtering, or electroplating. Wire bond strength evaluation requirements are shown in Table 18.

6.6.1.2 Reporting Requirements The report should include at least the following.

a) Name and address of the production unit and the evaluation unit, product name, batch number, etc.;

b) Test environment. temperature, humidity, cleanliness, etc.;

c) Test equipment. model, name, and serial number;

d) Sample quantity and distribution;

e) Test methods, criteria, test procedures and results, and test duration;

f) Failure modes and quantities;

g) Failure analysis report (if any).