GB/T 1554-1979Measurement of dislocation etch pits on (111) crystal face in monocrystalline silicon by etch display methods (English PDF)
GB/T 1554 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| GB/T 1554-2009 | Testing method for crystallographic perfection of silicon by preferential etch techniques | Valid |
| GB/T 1554-1995 | Test method for crystallographic perfection of silicon by preferential etch techniques | Obsolete |
| GB/T 1554-1979 | Measurement of dislocation etch pits on (111) crystal face in monocrystalline silicon by etch display methods | Obsolete |
GB/T 1554-1979 is obsolete. It has been replaced by GB/T 1554-1995. This page sells the obsolete edition, for projects and contracts that still cite it.
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Level / Type
National · Recommended
Scope
GB/T 1554-1979 (Measurement of dislocation etch pits on (111) crystal face in monocrystalline silicon by etch display methods) is available as an English-translated PDF.
GB/T 1554-1979 is the Chinese national standard "Measurement of dislocation etch pits on (111) crystal face in monocrystalline silicon by etch display methods". It is obsolete: it has been replaced by GB/T 1554-1995.
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Document preview — GB/T 1554-1979
Contents
- Document data
1 Document data
Sector: National standard (Recommended).
Status: obsolete, replaced by GB/T 1554-1995.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 29057-2023Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
- GB/T 41652-2022Silicon electrode and silicon ring for plasma etching machine
- GB/T 29054-2019Cast multicrystalline silicon bricks for photovoltaic solar cells
- GB/T 25076-2018Monocrystalline silicon for solar cell
- GB/T 4060-2018Test method for boron content in polycrystalline silicon by vacuum zone-melting method
- GB/T 12962-2015Monocrystalline silicon
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GB/T 1554-1979
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