GB/T 8756-2018Collection of metallographs on defects of germanium crystal (English PDF)
锗晶体缺陷图谱
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 28, 2018
Implementation date
July 1, 2019
Scope
GB/T 8756-2018 is the English-translated version of 锗晶体缺陷图谱.
GB/T 8756-2018 is a collection of metallographs of the defects found in germanium crystals.
It covers the defects that arise in the preparation and processing of polycrystalline and single-crystal germanium, and for each defect gives its features and its cause, illustrated by figures, with methods for eliminating some of them in informative Appendix A. It applies to defects arising in the production of zone-melted ingots, single crystals, lapped wafers and polished wafers.
Terms follow GB/T 14264, with an added definition of impurity pipe, and the defects of polycrystalline germanium open with oxide and dross. Compared with the 1988 edition, 34 old metallographs are removed, 44 are added and the descriptions of features and causes are improved.
It replaces GB/T 8756-1988, was issued on 28 December 2018 and has applied since 1 July 2019.
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Document preview — GB/T 8756-2018
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
- Replacing
- GB/T 8756-1988
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 Germanium crystal defects
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 8756-1988 "Germanium crystal defect map". This standard is compared with GB/T 8756-1988, the main technical changes The following is as follows.
--- Deleted 34 original defect maps, respectively, Figure 1, Figure 2, Figure 3, Figure 4, Figure 6, Figure 8, Figure 9, Figure 15, Figure 16, Figure 20, 21, 23, 24, 28, 29, 30, 32, 33, 78, 87, 88, 90, 91, 95, Figure 96, Figure 102, Figure 106, Figure 113, Figure 114, Figure 115, Figure 116, Figure 124, Figure 125, Figure 132 (see the 1st edition of the 1988 edition) Chapters, Chapter 2, Chapter 3);
--- Added terms and definitions (see Chapter 3);
--- Added 44 maps, respectively, Figure 1, Figure 2, Figure 3, Figure 4, Figure 6, Figure 8, Figure 9, Figure 13, Figure 14, Figure 15, Figure 16, Figure 22, 23, 24, 29, 30, 31, 33, 34, 80, 89, 90, 92, 93, 96, 97, 98, 99, 105, 106, 116, 117, 118, 119, 120, 128, 129, and 130, Figure 131, Figure 132, Figure 133, Figure 135, Figure 141, Figure 142 (see Chapter 4);
--- Improve the characteristics and causes of various types of defects (see Chapter 4);
--- Added informative Appendix A "Crystal Defect Elimination Method", and gave a method for eliminating some crystal defects (see Appendix A);
--- Removed the "Appendix B Transmission Electron Microscopy (TEM) (Supplement)" in the original standard (see Appendix B of the 1988 edition).
1 Scope
This standard stipulates the defects caused by the preparation and processing of polycrystalline and germanium single crystals, and gives the characteristics and origin of various defects. Because of the elimination method.
This standard is applicable to defects in the production process of zone melting ingots, tantalum single crystals, tantalum abrasive sheets and tantalum polishing sheets.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this document. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 14264 semiconductor material terminology
3 Terms and definitions
The following terms and definitions as defined in GB/T 14264 apply to this document.
3.1 Impurity pipeline
In the ruthenium single crystal, a duct-like impurity-rich region formed along the longitudinal direction of the crystal.
4 Germanium crystal defects
4.1 Germanium polycrystalline
4.1.1 Oxide
4.1.1.1 Features
The crystal surface loses the silver-gray metallic luster and presents a different color surface film, as shown in Figure 1.
4.1.1.2 Cause
Oxide is due to the high temperature of the crystal or long-term exposure to the air, and the organic matter introduced during the operation at high temperatures After decomposition, oxygen reacts with hydrazine to form.
4.1.2 Dross
4.1.2.1 Features
A thin layer of metallic luster that appears on the surface of the crystal, as shown in Figure 2.
4.1.2.2 Cause
Scum is a product of oxygen interacting with silicon in bismuth and antimony, or carbon or the like floating on the surface of the crucible melt, and the melt is solidified.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 34 pages — is available in the English PDF.
Referenced standards
Normative references
Similar standards
Editions of GB/T 8756
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 8756-2018 | Collection of metallographs on defects of germanium crystal | current edition | Current |
| GB/T 8756-1988 | Collection of metallographs on defects of germanium crystal | previous edition | Superseded |
This page sells the current edition, GB/T 8756-2018. Earlier editions are listed for reference only.
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Related Standards
GB/T 14264-1993 — Semiconductor materials-Terms and definitions
GB/T 14264-2009 — Semiconductor materials - Terms and definitions
GB/T 14264-2024 — Terminology of semiconductor materials
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