GB/T 44802-2024Technical specification for insulated-gate bipolar transistor (IGBT) driver of high-voltage direct current power transmission using voltage sourced converters (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part

1.Structure and drafting rules for standardization documents" Drafting. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document is proposed by the China Electrical Equipment Industry Association. This document is under the jurisdiction of the National Technical Committee for Standardization of Power Electronics Systems and Equipment (SAC/TC60). This document was drafted by: China Electric Power Research Institute Co., Ltd., Xi'an High Voltage Electrical Equipment Research Institute Co., Ltd., China Southern Power Grid Co., Ltd. Xi'an Electric Power Technology Research Institute Co., Ltd., Beijing Jiaotong University China Electric Power Research Institute, State Grid Corporation of China, State Grid Economic and Technological Research Institute Co., Ltd., State Grid Jiangsu Electric Power Co., Ltd. China Southern Power Grid Co., Ltd. Ultra-High Voltage Transmission Company, Beijing Lianyan Guoxin Technology Co., Ltd., Xuji Electric Co., Ltd., Tsinghua Sichuan Energy Internet Research Institute, TBEA Xinjiang New Energy Co., Ltd., Guangdong Fude Electronics Co., Ltd., Zhuzhou CRRC Generation Semiconductor Co., Ltd., State Grid Zhejiang Electric Power Co., Ltd. Electric Power Research Institute, State Grid Zhejiang Electric Power Co., Ltd. Zhoushan Power Supply Co., Ltd. Company, Guangdong Power Grid Co., Ltd. Electric Power Research Institute, State Grid Anhui Electric Power Co., Ltd. Electric Power Research Institute, North China Electric Power University, Shenzhen Bronze Sword Technology Co., Ltd. and State Grid Fujian Electric Power Co., Ltd. Electric Power Science Research Institute. The main drafters of this document are. He Zhiyuan, Zhou Huigao, Ke Jinkun, Fu Chuang, Xu Fan, Feng Jingbo, Yang Yuefeng, Yang Xiaohui, Wang Lei, Wen Fuyue, Wei Hongqi, Liu Jiqiu, Hu Zhilong, Wei Wei, Huang Chao, Zhao Zheng, Xu Yang, Bai Jiancheng, Li Lingfei, Zhang Yining, Xia Kepeng, Chen Zhengyu, Zheng Song, Liao Xiaobin, Sun Mei, Ren Yadong, Wei Zheng, Si Zhilei, Zhang Jianping, Liu Li, Li Chao, Xu Hangyu, Chen Ming, Dong Tianhua, Xiao Kai, Chen Qichen, Tan Lingqi, Liu Xiang, Wang Liping, Li Qi, Chen Zhong, Wu Xiaoguang, and Liu Jie. Insulated Gate Bipolar Transistor (IGB T) for HVDC Flexible Drive technical specifications

1 Scope

GB/T 44802-2024 specifies the IGBT gate driver for voltage sourced converter HVDC transmission. China operates more VSC-HVDC than anyone, and the gate driver is the component on which the whole converter's reliability rests: it sits at the potential of its own submodule, it must switch a device carrying thousands of amperes in microseconds, it must detect a short circuit and turn the device off safely within a few microseconds of it occurring, and its own failure takes out a submodule at best and a valve at worst. The standard sets the composition and functions of the driver and then the requirements: the gate drive capability and the switching timing, the power supply and its energy storage, the isolation and the insulation coordination between the driver and its control interface, the protection functions including short circuit detection and active clamping, the status monitoring and reporting to the valve control, the electromagnetic compatibility in a converter hall, and the reliability, followed by the type, routine and site tests. It takes effect on 1 May 2025.

This document specifies the terms and definitions, conditions of use, general requirements, main Parameter selection, technical requirements, testing, as well as packaging, marking, transportation and storage. This document applies to insulated gate bipolar transistors for flexible DC transmission using modular multilevel converter technology at ±800kV and below. The insulated gate bipolar transistor driver is used as a reference for power electronic equipment based on other converter topologies.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document.

GB/T 191 Pictorial markings for packaging, storage and transportation

GB/T 2423.1-2008 Environmental testing for electric and electronic products Part

3 Radio frequency electromagnetic field radiated immunity test

GB/T 17626.4-2018 Electromagnetic compatibility test and measurement technology Electrical fast transient burst immunity test

GB/T 17626.5-2019 Electromagnetic compatibility test and measurement technology surge (shock) immunity test

GB/T 17626.6-2017 Electromagnetic compatibility test and measurement techniques Immunity to conducted disturbances induced by radio frequency fields

GB/T 17626.8-2006 Electromagnetic compatibility test and measurement technology Power frequency magnetic field immunity test

GB/T 17626.9-2011 Electromagnetic compatibility test and measurement technology pulse magnetic field immunity test

GB/T 17626.10-2017 Electromagnetic compatibility test and measurement techniques Damped oscillatory magnetic field immunity test

GB/T 17626.12-2023 Electromagnetic compatibility test and measurement techniques Part

12 Ring wave immunity test

GB/T 17626.18-2016 Electromagnetic compatibility test and measurement technology Damped oscillatory wave immunity test

GB/T 29332-2012 Semiconductor devices-Discrete devices-Part