GB/T 42897-2023Micro-electromechanical systems (MEMS) technology—Tensile strength test method for nano-scale membranes of silicon based MEMS (English PDF)
微机电系统（MEMS）技术 硅基MEMS纳米厚度膜抗拉强度试验方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
August 6, 2023
Implementation date
December 1, 2023
Scope
GB/T 42897-2023 is the English-translated version of 微机电系统（MEMS）技术 硅基MEMS纳米厚度膜抗拉强度试验方法.
This document describes the requirements and the test method for measuring in situ the axial tensile strength of the nanometre-thick films made by silicon-based MEMS processing.
The document applies to tensile strength testing of nanometre-thick films manufactured by microelectronic processes.
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Document preview — GB/T 42897-2023
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 59
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- 1 Scope
- 2 Normative reference documents
- 3 Terms and Definitions
- 4 Test requirements
- 5 Test method
- Appendix A (informative) Recommended deformation scale structure and reading method of indicated value
- Appendix B (informative) In-situ on-chip test of nanometer thickness film tensile strength body silicon process preparation example
- Appendix C (informative) Recommended dimensions for in-situ on-chip testing machine for nanometer thickness film tensile strength
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.
1 Scope
This document describes the requirements and tests for in-situ testing of the axial tensile strength of nanometer-thick films involved in silicon-based MEMS processing. method.
This document is suitable for tensile strength testing of nanometer-thick films manufactured using microelectronics processes.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.
GB/T 26111 Microelectromechanical systems (MEMS) technical terminology
3 Terms and definitions
The terms and definitions defined in GB/T 26111 and the following apply to this document.
3.1 Silicon processing technology
siliconprocess Silicon micromachining technology.
Note: Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same. [Source: GB/T 26111-2010,3.5.2]
3.2 On-chip testing machine
It consists of a test structure and a test device, and the two are integrated on the same wafer and processed using the same silicon processing process.
A testing machine used to evaluate the tensile strength of process-related micro-nano structures.
3.3 Test structure
Micro-nano structures specially made to measure material properties or microstructure properties.
Note: For example, cantilever beam or fixed beam. [Source: GB/T 26111-2010, 3.7.19, modified]
3.4 Testing device
A microstructure that transmits force or displacement to the test structure and allows the force or displacement to be read out.
4 Test requirements
4.1 Design requirements for in-situ on-chip tensile strength testing machine
The structural diagram of the in-situ on-chip tensile strength testing machine is shown in Figure 1.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
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