GB/T 42895-2023Micro-electromechanical systems (MEMS) technology—Bending strength test method for microstructures of silicon based MEMS (English PDF)
微机电系统(MEMS)技术 硅基MEMS微结构弯曲强度试验方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
August 6, 2023
Implementation date
December 1, 2023
Scope
GB/T 42895-2023 is the English-translated version of 微机电系统(MEMS)技术 硅基MEMS微结构弯曲强度试验方法.
This document describes the requirements and the test method for measuring in situ the bending strength of the microstructures made by silicon-based MEMS processing.
The document applies to bending strength testing of microstructures manufactured by microelectronic processes.
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Document preview — GB/T 42895-2023
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 59
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- 1 Scope
- 2 Normative reference documents
- 3 Terms and Definitions
- 4 Test requirements
- 4.1 Design requirements for in-situ on-chip flexural strength testing machine
- 4.2 Preparation requirements for in-situ on-chip flexural strength testing machine
- 4.3 Test environment requirements
- 5 Test method
- 5.1 Overview
- 5.2 Microstructure bending strength test process
- 5.3 Calculation of microstructure bending strength test results
- Appendix A (Normative) Test device and test structure design dimensions
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.
1 Scope
This document describes the requirements and test methods for in-situ testing of the bending strength of microstructures involved in silicon-based MEMS processing.
This document applies to bending strength testing of microstructures manufactured using microelectronic processes.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.
GB/T 26111 Microelectromechanical systems (MEMS) technical terminology
GB/T 34558 Metal matrix composite terminology
3 Terms and definitions
The terms and definitions defined in GB/T 26111 and GB/T 34558 and the following apply to this document.
3.1 A beam in which the maximum normal stress is equal in all cross sections
3.2 Silicon processing technology
siliconprocess Silicon micromachining technology.
Note: Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same. [Source: GB/T 26111-2010,3.5.2]
3.3 Bending strength
The maximum normal stress that the specimen bears before bending and breaking. [Source: GB/T 34558-2017,3.6.1.5]
3.4 On-chip testing machine
It consists of a test structure and a test device, and the two are integrated on the same wafer and processed using the same silicon processing process. Testing machine for evaluating the bending strength of process-related microstructures.
3.4.1 Testing structure
Microstructures specially made for the purpose of measuring material properties or the performance of microstructures.
Note: For example, cantilever beam or fixed beam.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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Related Standards
GB/T 26111-2023 — Micro-electromechanical system technology - Terms
GB/T 34558-2017 — Terminology for metal matrix composites
GB/T 7251.4-2026 — Low-voltage switchgear and controlgear assemblies - Part 4: Particular requirements for assemblies for construction sites (ACS)
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