GB/T 42274-2022Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry (English PDF)
氮化铝材料中痕量元素(镁、镓)含量及分布的测定 二次离子质谱法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 30, 2022
Implementation date
April 1, 2023
Scope
GB/T 42274-2022 is the English-translated version of 氮化铝材料中痕量元素(镁、镓)含量及分布的测定 二次离子质谱法.
GB/T 42274-2022 is the Chinese national method for measuring the content and the distribution of trace magnesium and gallium in aluminium nitride single crystal by secondary ion mass spectrometry.
The determination range set in clause 1 runs from a magnesium and gallium content of not less than 1x10^16 atoms per cubic centimetre up to an element content of not more than 1 % atomic.
The method bombards the sample with oxygen primary ions under a vacuum better than 10^-7 Pa and takes the count-rate ratio of magnesium-24 and gallium-69 against the aluminium-27 matrix, quantifying by relative sensitivity factors.
It also lists the interfering factors: surface-adsorbed magnesium and gallium, the memory effect of the spectrometer, and instrument settings such as beam current density and focus. Issued on 30 December 2022, applicable since 1 April 2023.
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Document preview — GB/T 42274-2022
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 17
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Principles of the method
- 5 Interfering factors
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting.
1 Scope
This document describes a secondary ion mass spectrometry method for the determination of the content and distribution of trace magnesium and gallium in aluminum nitride single crystals.
This document is applicable to the quantitative determination of the content and distribution of trace magnesium and gallium in aluminum nitride single crystal. The determination range is that the content of magnesium and gallium is not less than 1 x 10^16cm-3, the element content (atomic percentage) is not more than 1%.
Note: The content of the element to be measured in the aluminum nitride single crystal is calculated by the number of atoms per cubic centimeter.
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document.
GB/T 14264 Terminology of semiconductor materials
GB/T 22461 Surface Chemical Analysis Vocabulary
GB/T 25186 Surface Chemical Analysis Secondary Ion Mass Spectrometry Determination of Relative Sensitivity Factors by Ion Implantation Reference Substances
GB/T 32267 Analytical instrument performance measurement terms
3 Terms and Definitions
The terms and definitions defined in GB/T 14264, GB/T 22461, GB/T 25186 and GB/T 32267 apply to this document.
4 Principles of the method
Under the condition of high vacuum (vacuum degree is better than 10-7Pa), the primary ions generated by the oxygen ion source are accelerated, purified and focused, and bombarded with nitrogen A variety of particles are sputtered on the surface of an aluminum sample, and the secondary ions are extracted, and the ions with different mass-to-charge ratios are separated by a mass spectrometer, and the sample is recorded.
The ratio of the ion count rate of the analyte element 24Mg, 69Ga and the matrix element 27Al in the product. Quantitatively analyzed and calculated using the relative sensitivity factor The content of the element to be measured in the aluminum nitride single crystal.
5 Interfering factors
5.1 Magnesium and gallium adsorbed on the surface of the sample may affect the test results of their content. During the entire operation process, the sample should avoid excessive contact with the outside world.
If touched, purge with dry nitrogen before placing in the cavity.
5.2 Secondary ion mass spectrometers have memory effects. If samples with high magnesium and gallium content are tested, magnesium and gallium may remain in the sample chamber of the instrument. Gallium, which affects test results for magnesium and gallium content.
5.3 Different models of instruments or the state of the same instrument (such as beam current density, focus state, electron multiplier efficiency, visual Field diaphragm and contrast diaphragm size, analysis chamber vacuum, etc.) will affect the detection limit of this method.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 14264Terminology of semiconductor materials
- GB/T 22461Surface chemical analysis - Vocabulary - Part 1: General terms and terms used in spectroscopy
- GB/T 25186Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of relative sensitivity factors from ion-implanted reference materials
- GB/T 32267Terminology of performance testing for analytical instrument
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Related Standards
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 22461.1-2023 — Surface chemical analysis - Vocabulary - Part 1: General terms and terms used in spectroscopy
GB/T 22461.2-2023 — Surface chemical analysis - Vocabulary - Part 2: Terms used in scanning probe microscopy
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