GB/T 25186-2010Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of relative sensitivity factors from ion-implanted reference materials (English PDF)
表面化学分析 二次离子质谱 由离子注入参考物质确定相对灵敏度因子
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Issued by
Standardization Administration of China
Level / Type
National · Recommended
Issue date
September 26, 2010
Implementation date
August 1, 2011
Scope
GB/T 25186-2010 is the English-translated version of 表面化学分析 二次离子质谱 由离子注入参考物质确定相对灵敏度因子.
GB/T 25186-2010 — This standard specifies a reference substance injected by the ion secondary ion mass spectrometry to determine the relative sensitivity factor method.
This standard applies to the chemical composition of the matrix of a single sample, wherein the injection substance peak atomic concentration does not exceed 1%.
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Document preview — GB/T 25186-2010
National Standard of the People's Republic of China
- ICS
- 71.040.40
- Classification
- G 04
Issued by: Standardization Administration of China
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies a reference material injected is determined by the ion secondary ion mass spectrometry relative sensitivity factor approach. This standard applies to the chemical composition of the substrate single sample, which injected substance peak atomic concentration does not exceed 1%.
Document data
International classification (ICS): 71.040.40.
Chinese classification (CCS): G04.
Estimated length of the Chinese original: 7,759 words.
Adopted international standard: ISO 18114-2003, IDT.
Standards quoted by this document
GB/T 22461-2008
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 5 pages — is available in the English PDF.
Referenced standards
Normative references
ISO 18115
Cited by
- GB/T 20176-2025Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
- GB/T 42274-2022Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry
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