GB/T 20176-2025Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

This document replaces GB/T 20176-2006 "Surface chemical analysis secondary ion mass spectrometry for the determination of boron in silicon using uniformly doped substances" Compared with GB/T 20176-2006, the main technical changes are as follows.

--- Changed the test conditions for oxygen ion beam (see 7.1, 7.1 of the 2006 edition).

This document is equivalent to ISO 14237:2010 "Surface chemical analysis - Determination of boron in silicon using uniformly doped materials using secondary ion mass spectrometry" Atomic Concentration.

Introduction

Developed to determine the degree.

Quantitative analysis by SIMS requires reference materials. They are expensive and calibrated reference materials are only suitable for specific combinations of matrix and impurities.

These reference materials are inevitably consumed in every SIMS measurement.

Every laboratory can prepare secondary reference materials for calibration with standard reference materials, which are useful in routine analysis.

This document describes a standard procedure for the quantitative analysis of boron in single crystal silicon using a secondary reference material that has been calibrated and implanted Calibration with boron reference material.

Surface chemical analysis secondary ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials

1 Scope

This document details the determination of the atomic concentration of boron in single crystal silicon using a calibrated uniform dopant (calibrated using a boron-implanted reference material).

The secondary ion mass spectrometry method is suitable for uniform boron doping with a concentration range of 1×1016 atoms/cm3 to 1×1020 atoms/cm3.

2 Normative references

The contents of the following referenced documents constitute the essential provisions of this document through normative reference in the text.

For referenced documents without a date, only the latest version (including all amendments) shall apply to this document.

For use in this document.

Note. GB/T 40109-2021 Surface chemical analysis - Boron depth profiling method in silicon by secondary ion mass spectrometry (ISO 17560:2014, IDT) ISO 18114 Surface chemical analysis Secondary ion mass spectrometry Determination of relative sensitivity factors (Sur-Note. GB/T 25186-2010 Surface chemical analysis secondary ion mass spectrometry - Determination of relative sensitivity factors by ion implantation reference materials (ISO 18114.

2003, IDT)

3 Principles

The oxygen or cesium ion beam impinges on the sample surface and the emitted boron and silicon secondary ions are mass analyzed and detected.

A uniformly doped secondary reference material (calibrated with the primary reference material by ion implantation) was used as the working reference material.

4 Reference materials