GB/T 37053-2018General specification for epitaxial wafers and substrates based on gallium nitride (English PDF)
氮化镓外延片及衬底片通用规范
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 28, 2018
Implementation date
July 1, 2019
Scope
GB/T 37053-2018 is the English-translated version of 氮化镓外延片及衬底片通用规范.
GB/T 37053-2018 is the Chinese general specification for gallium nitride (GaN) epitaxial wafers and GaN substrate wafers. It covers product classification, requirements, inspection methods, inspection rules, and marking, packaging, transport and storage.
Its terms describe the substrate structure, with free-standing GaN substrates and GaN composite substrates (templates), the conductivity type, such as semi-insulating GaN substrates, and material properties such as sheet resistance uniformity.
The products it covers are used mainly in light-emitting diodes, laser diodes, detectors and other devices, and in microwave and power electronic devices, so it serves wafer producers, device makers and inspection bodies. It was issued on 28 December 2018 and has applied since 1 July 2019.
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Document preview — GB/T 37053-2018
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 83
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies general specifications for GaN epitaxial wafers (hereinafter referred to as epitaxial wafers) and gallium nitride substrate wafers (hereinafter referred to as substrate wafers).
Includes product classification, requirements, inspection methods, inspection rules, and marking, packaging, transportation, and storage.
This standard applies to gallium nitride epitaxial wafers and gallium nitride substrate wafers. Products are mainly used for light-emitting diodes, laser diodes, detectors, etc.
Electrical devices, as well as microwave and power electronic power devices.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 5698-2001 color terminology
GB/T 14264-2009 Semiconductor material terminology
3 Terms and definitions
The following terms and definitions as defined in GB/T 5698-2001 and GB/T 14264-2009 apply to this document. In order to facilitate Use, the following repeatedly lists some terms and definitions in GB/T 14264-2009.
3.1 Substrate structure
3.1.1 GaN self-supporting substrate
Substrate in a semiconductor process with specific crystal faces and appropriate electrical, optical, and mechanical properties for epitaxial deposition, diffusion, and ion implantation A gallium nitride substrate that is subjected to subsequent processing operations.
3.1.2 GaN composite substrate
A composite structure composed of a gallium nitride single crystal thin film material and a supporting substrate thereof for subsequent processes such as epitaxial deposition, diffusion, and ion implantation Operating gallium nitride substrate.
3.2 Substrate conductivity type
3.2.1 GaN semi-insulating substrate
A gallium nitride self-supporting substrate having a resistivity greater than 10^6 ohm·cm.
3.3 Material properties
3.3.1 Surface resistance uniformity
The distribution of the sheet resistance in the epitaxial wafer is generally expressed as the ratio of the difference between the maximum and minimum values of the sheet resistance to the average sheet resistance.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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