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GB/T 36504-2018Guide for the analysis of the printed circuit board surface contamination—Auger electron spectroscopy (English PDF)

印刷线路板表面污染物分析 俄歇电子能谱

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

July 13, 2018

Implementation date

June 1, 2019

Scope

GB/T 36504-2018 is the English-translated version of 印刷线路板表面污染物分析 俄歇电子能谱.

GB/T 36504-2018 is a guide to analysing surface contamination on printed circuit boards by Auger electron spectroscopy (AES). It is aimed at the gold-plated fingers of a PCB and at measuring how elements are distributed at nanometre scale on a conductive solid surface, as support for failure analysis.

The document gives an overview of the method, including the ionization cross section and how it is calculated, then covers sample preparation and mounting, the analysis steps and the content of the measurement report.

It relies on the national standards for surface chemical analysis vocabulary, AES general rules, energy calibration, sputter depth profiling, charge control and data reporting.

Surface analysis laboratories and electronics manufacturers can use it for contamination studies. It was issued on 13 July 2018 and has applied since 1 June 2019.

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Document preview — GB/T 36504-2018

National Standard of the People's Republic of China

ICS
71.040.40
Classification
G 04

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Foreword
  • Introduction
  • 1 Scope
  • 2 Normative references
  • 3 Definition of terms
  • 4 Method Overview
  • 5 Sample preparation and installation
  • 6 Analysis step
  • 7 Measurement Report

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

Introduction

With the development of high technology, it is necessary to improve the functions and performance of electronic products, and highly integrated process requirements make printed circuit boards more and more In the direction of micro-fine, there are increasingly demanding requirements for device surface technology. Thus, the contamination of the printed circuit board surface It is vital.

Auger electron spectroscopy (AES) has high surface sensitivity and its detection depth is about 3~10 atomic monolayer (0.4nm~5nm).

The detection limit is 10^-3 atomic concentration, and the spatial resolution can reach 4nm. It can be used to analyze the properties of Li-U elements other than hydrogen and helium.

Volume analysis is widely used for surface chemical analysis of materials.

This standard specifies a method for measuring the surface contamination of printed circuit boards by a high-resolution Auger electron spectrometer for printed circuit boards. Failure analysis provides a reference.

1 Scope

This standard specifies a method for accurately measuring the surface contamination of a gold-plated finger on a printed circuit board PCB (printed circuit board). Method---Auger Electron Spectroscopy (AES).

This standard applies to the accurate measurement of the distribution of nanoscale elements with a certain conductive solid surface.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 22461-2008 Surface chemical analysis vocabulary

GB/T 26533-2011 General rules for Auger electron spectroscopy

GB/T 29731-2013 Surface chemical analysis High-resolution Auger electron spectrometer element and chemical state analysis with energy calibration

GB/T 29557-2013 Surface chemical analysis depth analysis sputtering depth measurement

GB/T 30815-2014 Surface chemical analysis analysis sample preparation and installation method guide

GB/T 32565-2016 Surface chemical analysis Auger electron spectroscopy (AES) data recording and reporting requirements

GB/T 32998-2016 Surface chemical analysis Auger electron energy spectrum charge control and calibration method report specification requirements

3 Terms and definitions

The terms and definitions defined in GB/T 22461-2008 apply to this document.

4 Method Overview

4.1 Ionization cross section

The ionization cross section is the cross section of a process in which a vacancy is created in a shell of an atom that has been occupied by electrons. Is a beam of electron bombardment samples At the time, the energy of the primary electron beam causes the atomic inner shell to ionize and form a vacancy.

According to the semi-empirical method, the ionization cross section can be calculated by the formula (1).

In the formula:

QW --- ionization cross section of the atom, in square centimeters (cm2);

The ionization energy of EW--W level electrons, the unit is electron volts (eV);

U --- ratio of excitation source energy to energy level ionization energy, EP/EW;

EP --- the energy of incident electrons (primary electrons) in electron volts (eV);

aW, bW --- constant.

The ionization cross section QW is a function of the excitation source energy and the energy level ionization energy ratio U. When U is 2.7, the ionization cross section can reach a maximum.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

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