GB/T 33922-2017Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances (English PDF)
MEMS压阻式压力敏感芯片性能的圆片级试验方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
July 12, 2017
Implementation date
February 1, 2018
Scope
GB/T 33922-2017 is the English-translated version of MEMS压阻式压力敏感芯片性能的圆片级试验方法.
GB/T 33922-2017 is the Chinese national standard for the wafer level testing of MEMS piezoresistive pressure sensitive die, called pressure sensitive chips, and it covers both the closed loop and the open loop type.
It defines the terms, fixes the test conditions, namely standard atmospheric conditions of 15 to 35 degrees Celsius, 20% to 80% relative humidity and 86 kPa to 106 kPa, plus the electromagnetic and vibration conditions and the test system, and lays down the general rules of testing: the certificate file, the warm up time and the connection.
The test clause covers preparation, resistance, atmospheric pressure output, static performance and temperature performance. It cites GB/T 2828.1 for sampling and takes its terms from GB/T 20522 and GB/T 26111. It was issued on 12 July 2017 and has applied since 1 February 2018.
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Document preview — GB/T 33922-2017
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 55
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 test conditions
- 4.1 Atmospheric conditions
- 4.2 Electromagnetic conditions
- 4.3 vibration conditions
- 4.4 Test System
- 5 General provisions of the test
- 5.1 Certificate File
- 5.2 warm-up time
- 5.3 Connection
- 6 test content and methods
- 6.1 Test Preparation
- 6.2 Resistance
- 6.3 atmospheric pressure output
- 6.4 static performance test
- 6.5 Temperature Performance Test
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies the terms and definitions of MEMS piezoresistive pressure-sensitive chips (referred to as pressure-sensitive chips), test conditions, test General provisions, test content and methods.
This standard applies to closed-loop and open-loop MEMS piezoresistive pressure-sensitive chip performance wafer-level test.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version applies to this document. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 2828.1 Sampling procedures for sampling inspection - Part 1: Batch inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 20522 Semiconductor devices - Part 14-3. Semiconductor sensors --- pressure sensors
GB/T 26111 Microelectromechanical System (MEMS) technology terminology
3 Terms and definitions
GB/T 20522 and GB/T 26111 as defined by the following terms and definitions apply to this document.
3.1 Piezoresistive pressure sensitive chip
Using MEMS technology to fabricate a cavity film structure on a silicon substrate, fabricating a semiconductor resistor on the film and forming a Wheatstone bridge, utilizing a semiconductor Piezoresistive effect of the body to achieve the pressure signal into electrical signals chip.
3.2 Closed-loop piezoresistive pressure sensitive chip
Wheatstone bridge is a closed-structure pressure-sensitive chip.
3.3 Open-loop piezoresistive pressure sensitive chip
Wheatstone Bridge is an open structure pressure sensitive chip.
4 Test conditions
4.1 Atmospheric conditions
Unless otherwise specified, all tests shall be carried out under the following conditions.
a) Standard atmospheric conditions. Temperature 15 °C ~ 35 °C; Relative humidity 20% ~ 80%; Atmospheric pressure 86kPa ~ 106kPa.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 2828.1Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
- GB/T 20522Semiconductor devices -- Part 14-3: Semiconductor sensors -- Pressure sensors
- GB/T 26111Micro-electromechanical system technology - Terms
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Related Standards
GB/T 20522-2006 — Semiconductor devices -- Part 14-3: Semiconductor sensors -- Pressure sensors
GB/T 26111-2023 — Micro-electromechanical system technology - Terms
GB/T 2828.1-2012 — Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
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