GB/T 28274-2012Silicon-based MEMS fabrication technology - The basic regulation of layout design (English PDF)
硅基MEMS制造技术 版图设计基本规则
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
May 11, 2012
Implementation date
December 1, 2012
Scope
GB/T 28274-2012 is the English-translated version of 硅基MEMS制造技术 版图设计基本规则.
GB/T 28274-2012 fixes the basic rules for the layout design of silicon-based MEMS, the micro machined structures made with photolithographic processes.
It sets the rules a layout has to follow - the alignment of the mask levels, the minimum widths and spacings, the compensation of the shapes that the etch will change, and the design of the released structures - so that a drawing can actually be made on the line.
It applies to layouts made for single or double sided contact lithography, oxidation and diffusion, chemical vapour deposition and the etching steps that go with them.
MEMS designers and the foundries that run their masks use it. Issued on 11 May 2012, it has applied since 1 December 2012.
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Document preview — GB/T 28274-2012
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 55
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions GB/T 26111-2010 defined and the following
- 4 Lithographic alignment and bond alignment method
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
1 Scope
This standard specifies the time microstructure processing, the basic rules of the lithographic layout design graphic design to be followed.
This standard applies to the use of contactless single/double-sided lithography, oxidation diffusion, chemical vapor deposition (CVD), physical vapor deposition (PVD), from Injection, reactive ion etching (RIE), potassium hydroxide (KOH) etching silicon - glass aligned electrostatic binding, wheel and other basic process for dicing.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this document. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms
3 Terms and Definitions
The terms and definitions defined in GB/T 26111-2010 and the following apply to this document.
3.1 Double-sided lithography
On one side of the substrate (A side), the substrate prepared with the other surface (B surface) of the resist pattern prior or traces patterned aligned relationship with certain the process of.
3.2 Light version lightmask
A large area of translucent lithograph.
3.3 Dark version darkmask
Large opaque lithograph.
3.4 Alignment marks alignmark
A step for aligning marks formed in different patterns.
4 Lithographic alignment and bond alignment method
4.1 Single-sided lithographic alignment method
By using tools such as lithography lithograph corresponding to the upper substrate on the graphic graphics aligned its work process shown in Figure 1.
Sided Lithography Alignment is patterned substrate surface is coated with a photoresist, photolithography equipment to existing graphics and graphics on a lithograph of the substrate After registration, then by exposing and developing the photoresist on the substrate processed into a lithographic printing plate is consistent with the graphics, and the graphics have been aligned relationship with the substrate Graphics.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 24 pages — is available in the English PDF.
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