GB/T 4937.35-2024Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

This document is part 35 of GB/T 4937 "Mechanical and climatic test methods for semiconductor devices". GB/T 4937 has been published the following parts.

--- Part 1: General;

--- Part 2: Low pressure;

--- Part 3: External visual inspection;

--- Part 4: Highly Accelerated Steady-State Humidity Test (HAST);

--- Part 11: Double liquid tank method for rapid temperature change;

--- Part 12: Sweep frequency vibration;

--- Part 13: Salt spray;

--- Part 14: Terminal strength (lead firmness);

--- Part 15: Resistance to soldering heat of through-hole mounted devices;

--- Part 17: Neutron irradiation;

--- Part 18: Ionizing radiation (total dose);

--- Part 19: Chip shear strength;

--- Part 20: Resistance of plastic encapsulated surface mount devices to the combined effects of moisture and soldering heat;

--- Part 20-1.Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat;

--- Part 21: Weldability;

--- Part 22: Bond strength;

--- Part 23: High temperature working life;

--- Part 26: Electrostatic discharge (ESD) sensitivity test human body model (HBM);

--- Part 27: Electrostatic discharge (ESD) sensitivity test machine model (MM);

--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability testing;

--- Part 31: Flammability of plastic encapsulated components (internal induced);

--- Part 32: Flammability of plastic encapsulated components (externally induced);

--- Part 34: Power cycling;

--- Part 35: Acoustic microscopy of plastic encapsulated electronic components;

--- Part 42: Temperature and humidity storage.

This document is equivalent to IEC 60749-35:2006 "Mechanical and climatic test methods for semiconductor devices Part 35: Plastic packaged electronic devices Acoustic Microscopy Inspection of Components.

This document adds a chapter on "Normative Reference Documents", and the subsequent chapter numbers are postponed accordingly.

Introduction

Semiconductor devices are common basic products in the electronic industry chain and are the most basic units in electronic systems.

The "Mechanical and Climate Test Methods for Semiconductor Devices" is a basic and universal standard for testing semiconductor devices.

The quality and reliability of the device play an important role and it is planned to consist of 44 parts.

--- Part 1: General. The purpose is to specify general criteria for mechanical and climatic test methods for semiconductor devices.

--- Part 2: Low pressure. The purpose is to test the ability of components and materials to avoid electrical breakdown failure.

--- Part 3: External visual inspection. The purpose is to detect whether the material, design, structure, marking and process quality of semiconductor devices meet the requirements.

Procurement document requirements.

--- Part 4: Highly Accelerated Steady State Humidity Test (HAST). The purpose is to specify the Highly Accelerated Steady State Humidity Test (HAST) to test Test the reliability of non-hermetic packaged semiconductor devices in humid environments.

--- Part 5: Steady-state temperature and humidity bias life test. The purpose is to specify the steady-state temperature and humidity bias life test to detect non-airtight Reliability of packaged semiconductor devices in humid environments.

--- Part 6: High temperature storage. The purpose is to detect the impact of high temperature storage on semiconductor devices without applying electrical stress.

--- Part 7: Internal water vapor measurement and other residual gas analysis. The purpose is to detect the quality of the packaging process and provide relevant information about the gas Information on the long-term chemical stability of the body within the shell.

--- Part 8: Sealing. The purpose is to detect the leakage rate of semiconductor devices.

--- Part 9: Marking durability. The purpose is to detect the durability of markings on semiconductor devices.

--- Part 10: Mechanical shock. The purpose is to test the adaptability of semiconductor devices and printed circuit board assemblies to moderately severe shocks.

ability.

--- Part 11: Rapid temperature change double tank method. The purpose is to specify the rapid temperature change (double tank method) of semiconductor devices the test procedures, failure criteria, etc.

--- Part 12: Swept frequency vibration. The purpose is to detect the effect of vibration on semiconductor devices within a specified frequency range.

--- Part 13: Salt spray. The purpose is to detect the corrosion resistance of semiconductor devices.

--- Part 14: Terminal strength (lead firmness). The purpose is to detect the semiconductor device lead/package interface and the lead firmness.

Solidity.

--- Part 15: Resistance to soldering heat of through-hole mounted devices. The purpose is to test the resistance of through-hole mounted solid-state packaged semiconductor devices to soldering heat.

Ability to withstand thermal stress caused by wave soldering or soldering iron soldering leads.

--- Part 16: Particle Impact Noise Detection (PIND). The purpose is to specify the detection of free particles in cavity devices method.

--- Part 17: Neutron irradiation. The purpose is to detect the sensitivity of semiconductor devices to performance degradation in a neutron environment.

--- Part 18: Ionizing radiation (total dose). The purpose is to specify the evaluation of the effects of low dose rate ionizing radiation on semiconductor devices.

Accelerated annealing test method.

--- Part 19: Chip shear strength. The purpose is to test the materials and the integrity of the process steps.

--- Part 20: Resistance of plastic encapsulated surface mount devices to the combined effects of moisture and soldering heat. The purpose is to simulate storage in a warehouse or the moisture absorbed by plastic-sealed surface-mounted semiconductor devices in a dry packaging environment is then evaluated for their resistance to soldering heat.

--- Part 20-1.Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat. Purpose to specify the handling, packaging, transportation, and use of plastic encapsulated surface mount semiconductor devices that are sensitive to the combined effects of moisture and soldering heat method.

--- Part 21: Solderability. The purpose is to specify the lead terminals of component packages that are soldered with lead-tin solder or lead-free solder.

Solderability test procedure.

--- Part 22: Bond strength. The purpose is to detect the bonding strength of semiconductor devices.

--- Part 23: High temperature operating life. The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time.

experiment method.

--- Part 24: Accelerated humidity resistance unbiased strong accelerated stress test. The purpose is to detect the non-hermetic packaged solid-state devices in humidity Reliability in the environment.

--- Part 25: Temperature Cycle. The purpose is to detect the semiconductor devices, components and circuit board assemblies subjected to extreme high temperature and extreme the ability of low temperature alternation to induce mechanical stress.

--- Part 26: Electrostatic discharge (ESD) sensitivity test human body model (HBM). The purpose is to specify reliable and repeatable HBMESD test method.

--- Part 27: Electrostatic discharge (ESD) sensitivity test machine model (MM). The purpose is to specify reliable and repeatable MMESD test method.

--- Part 28: Electrostatic discharge (ESD) sensitivity test charged device model (CDM) device level. The purpose is to specify Reliable and repeatable CDMESD test method.

--- Part 29: Latch-up test. The purpose is to specify the method for detecting the latch-up characteristics of integrated circuits and the failure criteria for latch-up.

--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability testing. The purpose is to specify non-hermetic surface mount A standard procedure for preconditioning devices before reliability testing.

--- Part 31: Flammability of plastic encapsulated devices (internally caused). The purpose is to detect whether the plastic encapsulated device is caused by overload.

The inside gets hot and burns.

--- Part 32: Flammability of plastic encapsulated components (externally induced). The purpose is to detect whether the plastic encapsulated components are flammable due to external heating.

Into burning.

--- Part 33: Accelerated humidity resistance unbiased autoclave. The purpose is to identify the internal failure mechanism of semiconductor device packages.

--- Part 34: Power Cycle. The purpose is to apply cyclic power loss to the internal chips and connectors of semiconductor devices.

Test the thermal and mechanical stress resistance of semiconductor devices.

--- Part 35: Acoustic microscopy of plastic-encapsulated electronic components. The purpose is to specify the acoustic microscopy of plastic-encapsulated electronic components.

A method for detecting defects (delamination, cracks, voids, etc.) in components.

--- Part 36: Steady-state acceleration. The purpose is to specify the test method for steady-state acceleration of cavity semiconductor devices to detect their structure Structural and mechanical type defects.

--- Part 37: Board-level drop test method using accelerometer. The purpose is to specify the board-level drop test using accelerometer the method can be used to repeatably test surface mount device drop tests while reproducing the failure modes commonly seen during product-level testing.

--- Part 38: Soft error test method for semiconductor devices with memory. The purpose is to specify the soft error test method for semiconductor devices with memory.

A test method for soft error sensitivity in high-energy particle environments (such as alpha radiation).

--- Part 39: Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices.

Method for measuring moisture diffusivity and water solubility of organic materials used in encapsulating conductive devices.

--- Part 40: Board level drop test method using strain gauges. The purpose is to specify the board level drop test method using strain gauges.

The drop test method can be used to repeatably test surface mount devices and reproduce the failure modes commonly seen during product level testing.

--- Part 41: Non-volatile memory reliability test method. The purpose is to specify the effective endurance and data According to the requirements of holding and temperature cycling tests.

--- Part 42: Temperature and humidity storage. The purpose is to specify the test method for detecting the ability of semiconductor devices to withstand high temperature and high humidity environments.

--- Part 44: Neutron irradiation single event effects (SEE) test method for semiconductor devices. The purpose is to specify the detection of high-density cluster the test method of single event effects (SEE) in integrated circuits.

GB/T 4937 (all parts) adopts IEC 60749 (all parts) in a one-to-one correspondence to ensure that the semiconductor device test methods are consistent with the national the standard is consistent with international standards, and the semiconductor device inspection method, reliability evaluation, and quality level are in line with international standards.

The test methods and stress of semiconductor devices are improved.

Mechanical and climatic test methods for semiconductor devices Part 35: Plastic encapsulated electronic components Acoustic microscopy

1 Scope

This document specifies procedures for acoustic microscopy of plastic encapsulated electronic components.

A method for inspecting plastic packages for defects (delamination, cracks, molding compound voids, etc.). This method is repeatable and non-destructive.

2 Normative references

This document has no normative references.

3 Terms and definitions

The following terms and definitions apply to this document.

A-mode

Acoustic data are collected within the smallest XYZ area achievable by a given acoustic microscope.

Note. A-mode images reflect the changes in amplitude and phase (polarity) with the transmission time of a certain point in the XY plane.

The acoustic microscope is focusing, as shown in Figure 1.

Figure 1 A-mode scanning example

B-mode

Acoustic data are collected along the depth direction of the XZ or YZ plane using a reflection acoustic microscope. B-mode scanning reflects amplitude and phase (Polarity) varies with the transmission time of each point on the scan line.

NOTE. B-mode scanning provides a two-dimensional (cross-sectional) image along the scan line (X or Y). In this test method, B-mode is used to provide cross-sectional acoustic information.

When the defect is detected, the B mode can track the depth of the defect.