GB/T 4937.25-2025Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting.

This document is Part 25 of GB/T 4937, "Mechanical and Climatic Test Methods for Semiconductor Devices". GB/T 4937 has been published.

The following section.

---Part 1: General Provisions;

---Part 2: Low Pressure;

---Part 3: External Visual Inspection;

---Part 4: Highly Accelerated Steady-State Damp Heat Test (HAST);

---Part 8: Sealing;

---Part 10: Mechanical Impact Devices and Components;

---Part 11: Rapid Temperature Change in Two-Liquid Tank Method;

---Part 12: Sweep Frequency Vibration;

---Part 13: Salt Spray;

---Part 14: Lead Strength (Lead Wire Secureness);

---Part 15: Solder Heat Resistance of Through-Hole Mounting Devices;

---Part 16: Particle Collision Noise Detection (PIND);

---Part 17: Neutron Irradiation;

---Part 18: Ionizing Radiation (Total Dose);

---Part 19: Chip Shear Strength;

---Part 20: Combined effects of moisture and soldering heat on molded surface mount devices;

---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat;

---Part 21: Solderability;

---Part 22: Bond Strength;

---Part 23: High-Temperature Operating Life;

---Part 24: Accelerated Moisture Resistance Test with Unbiased Strong Accelerated Stress;

---Part 25: Temperature Cycling;

---Part 26: Electrostatic Discharge (ESD) Sensitivity Testing Human Model (HBM);

---Part 27: Mechanical Model (MM) for Electrostatic Discharge (ESD) Sensitivity Testing;

---Part 29: Latch Test;

---Part 30: Pretreatment of Unsealed Surface Mount Devices Prior to Reliability Testing;

---Part 31: Flammability of Molded Devices (Internal Causes);

---Part 32: Flammability of Molded Devices (Externally Caused);

---Part 33: Accelerated Moisture-Resistant, Non-Biased High-Pressure Cooking;

---Part 34: Power Cycling;

---Part 35: Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components;

---Part 36: Steady-state acceleration;

---Part 37: Plate Drop Test Method Using Accelerometers;

---Part 38: Soft error testing methods for semiconductor devices to be stored;

---Part 39: Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices;

---Part 40: Plate Drop Test Method Using Strain Gauges;

---Part 42: Temperature and Humidity Storage;

---Part 44: Test methods for single-event effects (SEE) by neutron irradiation on semiconductor devices.

This document is equivalent to IEC 60749-25:2003 "Mechanical and climatic testing methods for semiconductor devices - Part 25: Temperature cycling".

The following minimal editorial changes have been made to this document.

---Explanatory content in the definition of term 3.14 is changed to a note.

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).

Introduction

Semiconductor devices are general-purpose basic products in the electronics industry chain and are the most basic units in electronic systems. GB/T 4937 "Semiconductor Devices" the "Mechanical and Climate Test Methods for Semiconductor Devices" is a fundamental and universal standard for testing semiconductor devices, used for evaluating and assessing semiconductors.

The device plays a crucial role in quality and reliability and is planned to consist of 44 parts.

---Part 1: General Principles. The purpose is to establish general guidelines for mechanical and climatic testing methods for semiconductor devices.

---Part 2: Low Pressure. The purpose is to test the ability of components and materials to avoid electrical breakdown failure.

---Part 3: External Visual Inspection. The purpose is to inspect whether the materials, design, structure, markings, and manufacturing processes of semiconductor devices meet the required standards.

Requirements for procurement documents.

---Part 4: Strong Accelerated Steady-State Damp Heat Test (HAST). The purpose is to specify the Strong Accelerated Steady-State Damp Heat Test (HAST) to detect...

To test the reliability of non-hermetically sealed semiconductor devices in humid environments.

---Part 5: Steady-State Temperature and Humidity Offset Lifetime Test. The purpose is to specify the steady-state temperature and humidity offset lifetime test to detect non-hermetic leaks.

Reliability of packaged semiconductor devices in humid environments.

---Part 6: High-Temperature Storage. The purpose is to investigate the effects of high-temperature storage on semiconductor devices without applying electrical stress.

---Part 7: Internal Moisture Measurement and Other Residual Gas Analysis. The purpose is to assess the quality of the packaging process and provide information on the gas content.

Information on the long-term chemical stability of the substance within the shell.

---Part 8: Sealing. The purpose is to detect the leakage rate of semiconductor devices.

---Part 9: Marking Durability. The purpose is to test the durability of markings on semiconductor devices.

---Part 10: Mechanical Shock Devices and Components. The purpose is to test semiconductor devices and printed circuit board assemblies against moderate stress.

The ability to adapt to shocks.

---Part 11: Rapid Temperature Change Two-Batter Method. The purpose is to define the rapid temperature change (two-batter method) for semiconductor devices.

The test procedures, failure criteria, and other related content.

---Part 12: Sweep Frequency Vibration. The purpose is to detect the effect of vibration on semiconductor devices within a specified frequency range.

---Part 13: Salt Spray. The purpose is to test the corrosion resistance of semiconductor devices.

---Part 14: Lead Strength (Lead Bonding). The purpose is to test the bonding strength of semiconductor device lead/package interfaces and leads.

Solid.

---Part 15: Solder Heat Resistance of Through-Hole Mounted Devices. The purpose is to test the solder heat resistance of through-hole mounted solid-state packaged semiconductor devices.

The ability to withstand the thermal stress generated by peak soldering or soldering leads with a soldering iron.

---Part 16: Particle Collision Noise Detection (PIND). The purpose is to specify a method for detecting free particles within cavity devices.

---Part 17: Neutron Irradiation. The purpose is to detect the susceptibility of semiconductor devices to performance degradation in a neutron environment.

---Part 18: Ionizing Radiation (Total Dose). The purpose is to specify the methods for assessing the effects of low-dose-rate ionizing radiation on semiconductor devices.

Rapid annealing test method.

---Part 19: Chip Shear Strength. The purpose is to test the materials and processes used in mounting semiconductor chips onto sockets or substrates.

The completeness of the process steps.

---Part 20: Combined Effects of Moisture and Soldering Heat on Molded Surface Mount Devices. The aim is to simulate storage conditions in warehouses or dry environments.

The moisture absorbed by the plastic-sealed surface of semiconductor devices in a dry packaging environment is then evaluated to assess their resistance to soldering heat.

---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat. Purpose the regulations govern the handling, packaging, transportation, and use of surface-mount semiconductor devices in plastic packages that are sensitive to the combined effects of moisture and soldering heat.

method.

---Part 21: Solderability. This section specifies the solderability of component package leads that are soldered using lead-tin solder or lead-free solder.

Solderability test procedure.

---Part 22: Bond Strength. The purpose is to test the bond strength of semiconductor devices.

---Part 23: High-Temperature Operating Life. The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time.

Experimental methods.

---Part 24: Accelerated Moisture Resistance Test with No Bias. The purpose is to test the performance of non-hermetic solid-state devices in humid environments.

Reliability under certain conditions.

---Part 25: Temperature Cycling. The purpose is to test the ability of semiconductor devices, components, and circuit board assemblies to withstand extreme high temperatures and extreme...

The ability of low-temperature alternating forces to induce mechanical stress.

---Part 26: Human Model (HBM) for Electrostatic Discharge (ESD) Sensitivity Testing. The aim is to specify reliable and repeatable...

HBMESD testing method.

---Part 27: Mechanical Model (MM) for Electrostatic Discharge (ESD) Sensitivity Testing. The purpose is to specify reliable and repeatable...

MMESD testing method.

---Part 28: Electrostatic Discharge (ESD) Sensitivity Testing of Charged Device Models (CDMs) at the Device Level. The purpose is to specify reliable...

A repeatable CDMESD test method.

---Part 29: Latch-up Testing. The purpose is to specify methods for testing the latch-up characteristics of integrated circuits and criteria for latch-up failure.

---Part 30: Pre-treatment of Unsealed Surface Mount Devices Prior to Reliability Testing. The purpose is to specify the pre-treatment procedures for unsealed surface mount devices.

The standard procedure for pre-processing components before reliability testing.

---Part 31: Flammability of Molded Devices (Internal Cause). The purpose is to test whether internal flammability of molded devices is caused by overload.

The part heats up and burns.

---Part 32: Flammability of Molded Devices (Externally Caused). The purpose is to test whether flammability of molded devices is caused by external heat.

combustion.

---Part 33: Accelerated Moisture-Resistant, Bias-Free High-Pressure Cooking. The aim is to confirm the internal failure mechanism of semiconductor device packages.

---Part 34: Power Cycling. The purpose is to detect power cycling by applying cyclic power losses to the chips and connectors inside semiconductor devices.

To test the heat and mechanical stress resistance of semiconductor devices.

---Part 35: Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components. The purpose is to specify the acoustic microscopy requirements for plastic-encapsulated electronic components.

Methods for detecting defects (delamination, cracks, voids, etc.).

---Part 36: Steady-State Acceleration. The purpose is to specify the test method for the steady-state acceleration of cavity semiconductor devices in order to detect their structural properties.

Defects in structure and mechanical type.

---Part 37: Plate Drop Test Method Using Accelerometers. The purpose is to specify the plate drop test method using accelerometers.

The method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.

---Part 38: Soft Fault Testing Methods for Semiconductor Devices with Storage. The purpose is to specify the operating conditions of semiconductor devices with storage.

Experimental methods for soft error sensitivity in high-energy particle environments (such as alpha radiation).

---Part 39: Measurement of Moisture Diffusivity and Water Solubility of Organic Materials for Semiconductor Devices. The purpose is to specify the applications of organic materials in semiconductor devices.

Methods for measuring the moisture diffusivity and water solubility of organic materials used in the packaging of bulk devices.

---Part 40: Plate Drop Test Method Using Strain Gauges. The purpose is to specify the method for plate drop tests using strain gauges.

This method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.

---Part 41: Test methods for the reliability of non-volatile memory. The purpose is to specify the effective durability and reliability of non-volatile memory.

According to the requirements of the holding and temperature cycling test.

---Part 42: Temperature and Humidity Storage. The purpose is to specify test methods for assessing the ability of semiconductor devices to withstand high temperature and humidity environments.

---Part 44: Test methods for single-event effects (SEE) under neutron irradiation in semiconductor devices. The purpose is to specify the detection methods for high-density integrated circuits.

Test methods for single-event effect (SEE) in circuits.

GB/T 4937 (all parts) corresponds one-to-one with IEC 60749 (all parts) to ensure that the test methods for semiconductor devices are in line with international standards.

This standard aims to align semiconductor device testing methods, reliability evaluation, and quality levels with international standards. By establishing this standard, unified testing procedures will be defined.

Test methods and stresses, and improve the standard system for semiconductor devices.

Mechanical and Climate Testing Methods for Semiconductor Devices Part 25: Temperature Cycling

1 Scope

This document describes how to determine the mechanical stresses induced by alternating extreme high and low temperatures on semiconductor devices, components, and circuit board assemblies.

The ability to withstand stress. This mechanical stress can cause permanent changes in its electrical or physical properties.

This document generally conforms to IEC 60068-2-14, but due to the special requirements of semiconductor devices, the terms of this document are used.

This test method can employ single-chamber, two-chamber, and three-chamber methods for temperature cycling tests of individual components and solder joint interconnects.

During chamber temperature cycling, the load is placed inside a fixed test chamber. Hot air, ambient air, or cold air is introduced into the test chamber to heat or cool the load.

During the two-chamber temperature cycling test, the load is placed on a movable platform that moves between two fixed test chambers that maintain the set temperature.

Movement. During the three-chamber temperature cycling process, the load moves between the three test chambers.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.

This document.

2-14.Tests-TestN.Changeoftemperature) Note. GB/T 2423.22-2012 Environmental testing - Part 2: Test methods - Test N. Temperature variation (IEC 60068-2-14:2009, IDT)

3 Terms and Definitions

The following terms and definitions apply to this document.

load

The sample placed in the test chamber during the test and the fixtures (such as trays, supports, etc.) that hold the sample in place.

working zone

The load temperature inside the test chamber is controlled within the specified range.

sample temperature

The sample temperature indicated by a thermocouple or equivalent temperature measuring device bonded to or embedded in the load during temperature cycling.

Note. When using thermocouples or equivalent temperature measuring devices, whether bonded or embedded, ensure the entire sample reaches its maximum temperature and residence time.

Time requirement.

Ts(max)

The highest temperature of the sample as measured by a thermocouple (see 3.3).