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GB/T 42896-2023Micro-electromechanical systems (MEMS) technology—Impact test method for nanostructures of silicon based MEMS (English PDF)

微机电系统(MEMS)技术 硅基MEMS纳尺度结构冲击试验方法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

August 6, 2023

Implementation date

December 1, 2023

Scope

GB/T 42896-2023 is the English-translated version of 微机电系统(MEMS)技术 硅基MEMS纳尺度结构冲击试验方法.

This document describes the requirements and the test method for impact testing through the thickness of the nanoscale membrane structures made by silicon-based MEMS technology.

The document applies to testing the resistance of nanoscale structures manufactured by microelectronic technology to an impact load.

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Document preview — GB/T 42896-2023

National Standard of the People's Republic of China

ICS
31.200
Classification
L 59

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Preface
  • 1 Scope
  • 2 Normative reference documents
  • 3 Terms and Definitions
  • 4 Requirements
  • 5 Test method
  • Appendix A (informative) Recommended dimensions for in-situ on-chip impact testing machine
  • Appendix B (informative) In-situ on-chip thermally driven nanoscale structural impact testing machine test example

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

1 Scope

This document describes the requirements and tests for impact testing along the thickness direction of nanoscale membrane structures involved in silicon-based MEMS manufacturing technology. method.

This document is suitable for testing the impact resistance of nanoscale structures manufactured using microelectronics technology under an impact load.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 2900.28 Electrician terminology power tools

GB/T 26111 Microelectromechanical systems (MEMS) technical terminology

GB/T 36416.1 Testing machine vocabulary Part 1: Material testing machines

3 Terms and definitions

The following terms and definitions as defined in GB/T 2900.28, GB/T 26111 and GB/T 36416.1 apply to this document.

3.1 Silicon processing technology

siliconprocess Silicon micromachining technology.

Note: Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same. [Source: GB/T 26111-2010,3.5.2]

3.2 In-situ on-chip impact testing

It consists of a test structure and a test device, which are integrated on the same wafer and processed using the same process flow for evaluation. Testing machine for impact resistance of process-related micro-nano structures.

3.3 Testing structure

Micro-nano structures (e.g., cantilever beams or fixed beams) specially made for measuring material properties or microstructure properties.

Note: This document refers to double-ended fixed beams. [Source: GB/T 26111-2010, 3.7.19, modified]

3.4 Testing device

A microstructure that transmits force or displacement to the test structure and allows the force or displacement to be read out.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

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