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GB/T 40110-2021Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy (English PDF)

表面化学分析全反射X射线荧光光谱法（TXRF）测定硅片表面元素污染

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Issued by

State Administration for Market Regulation, China National Standardization Administration

Level / Type

National · Recommended

Issue date

May 21, 2021

Implementation date

December 1, 2021

Scope

GB/T 40110-2021 is the English-translated version of 表面化学分析全反射X射线荧光光谱法（TXRF）测定硅片表面元素污染.

GB/T 40110-2021 is the Chinese standard "Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy".

Its scope clause reads: This document describes TXRF that measures the surface density of atoms contaminated by elements on the surface of silicon wafers that have been chemically mechanically polished or epitaxially grown. method.

This document applies to the following situations. ---Elements with atomic numbers from 16 (S) to 92 (U); ---Polluting elements with atomic surface density between 1×1010atoms/cm2~1×1014atoms/cm2; ---The atomic surface density obtained by the VPD (Vapour Phase Decomposition) sample preparation method is between 5×108atoms/cm2~5×1012at- Contaminant elements between oms/cm2 (see 3.4). Its clauses include terms and definitions.

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Document preview — GB/T 40110-2021

National Standard of the People's Republic of China

Classification: G 04

Issued by: State Administration for Market Regulation, China National Standardization Administration

Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Abbreviations
5 Principle
6 Equipment
7 Sample preparation and measurement environment
8 Calibration reference materials
9 Security
10 Measurement procedure
11 Result expression
12 Precision
13 Test report
Appendix A (informative) Reference material
Appendix B (informative) Relative sensitivity factor
Appendix C (informative) Preparation of reference materials
Appendix D (informative) VPD-TXRF method
Appendix E (Informative) Glance Angle Setting
Appendix F (informative) International inter-laboratory test results

1 Scope

This document describes TXRF that measures the surface density of atoms contaminated by elements on the surface of silicon wafers that have been chemically mechanically polished or epitaxially grown.

method.

This document applies to the following situations.

---Elements with atomic numbers from 16 (S) to 92 (U);

---Polluting elements with atomic surface density between 1×1010atoms/cm2~1×1014atoms/cm2;

---The atomic surface density obtained by the VPD (Vapour Phase Decomposition) sample preparation method is between 5×108atoms/cm2~5×1012at-

Contaminant elements between oms/cm2 (see 3.4).

2 Normative references

The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations

Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to

This document.

ISO 14644-1 Clean room and related control environment Part 1.Air cleanliness level (Cleanrooms and associated controledenvironments-Part 1.Classificationofaircleanliness)

3 Terms and definitions

The following terms and definitions apply to this document.

3.1 Total reflection

When grazing incident X-rays are irradiated to a medium with a larger X-ray density, the complete reflection occurs at the boundary of the two mediums.

Note. The refractive index of silicon wafers for X-rays is less than 1.X-rays incident on the surface of the silicon wafer at a small grazing angle will be totally reflected on the surface of the silicon wafer.

The angle of fire is equal to the glancing angle.

3.2 Glancing angle

The angle between the plane of the sample surface and the virtual plane containing the X-rays incident on the sample surface.

3.3 Criticalangle

The grazing angle corresponding to the first inflection point in the graph of sample matrix X-ray fluorescence intensity and grazing angle.

3.4 VPD-TXRF method

A method of collecting surface impurities through the VPD program. Use a drop of collection reagent (usually ultra-pure hydrofluoric acid) to collect oxygen on the surface of the silicon wafer

The non-volatile product formed after the acid decomposition of the compound is then dried in the least polluted environment, and the final droplet residue formed is used

GB/T 40244 | GB/T 35924 | GB/T 35930 | GB/T 18295 | GB/T 40109 | […]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 44 pages — is available in the English PDF.

Referenced standards

Normative references

ISO 14644

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