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GB/T 39159-2020High purity copper alloy target for integrated circuit (English PDF)

集成电路用高纯铜合金靶材

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

November 19, 2020

Implementation date

October 1, 2021

Scope

GB/T 39159-2020 is the English-translated version of 集成电路用高纯铜合金靶材.

GB/T 39159-2020 is the Chinese national standard for the high-purity copper alloy sputtering targets used in integrated circuit manufacturing.

It classifies the targets and sets the technical requirements, the test methods and the inspection rules, with the marking, packaging, transportation and storage requirements, the quality certificate and what the purchase order or contract must state.

It defines the target, the target blank, the backplane and the surface roughness Ra, and points to GB/T 14265 for hydrogen, oxygen, nitrogen, carbon and sulfur, to YS/T 922 for trace impurities by glow discharge mass spectrometry, to GB/T 36165 and YS/T 347 for grain size, and to GB/T 8651 and YS/T 837 for ultrasonic testing of the plate and of the target-to-backplane bond.

It covers copper-aluminium and copper-manganese targets. It was issued on 19 November 2020 and has applied since 1 October 2021.

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Document preview — GB/T 39159-2020

National Standard of the People's Republic of China

ICS: 77.150.30
Classification: H 62

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Foreword
1 Scope
2 Normative references
3 Terms and definitions

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

1 Scope

This standard specifies the classification, technical requirements, test methods, and inspection rules of high-purity copper alloy targets for integrated circuits (hereinafter referred to as targets)

And signs, packaging, transportation, storage, quality certificate and purchase order (or contract) content.

This standard applies to high-purity copper-aluminum (CuAl) alloy targets and high-purity copper-manganese (CuMn) alloy targets for integrated circuit manufacturing.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this document. For undated references, the latest version (including all amendments) applies to this document.

GB/T 8170 Numerical rounding rules and the expression and determination of limit values

GB/T 8651 Ultrasonic plate wave flaw detection method for sheet metal

GB/T 14265 General rules for analysis methods of hydrogen, oxygen, nitrogen, carbon and sulfur in metallic materials

GB/T 36165 Determination of the average grain size of metals by electron backscatter diffraction (EBSD) method

YS/T 347 Copper and copper alloy average grain size determination method

YS/T 482 Copper and copper alloy analysis method photoelectric emission spectrometry

YS/T 837 Sputtering target-backplane bonding quality ultrasonic inspection method

YS/T 922 Chemical analysis method for high purity copper. Determination of trace impurity element content. Glow discharge mass spectrometry

3 Terms and definitions

The following terms and definitions apply to this document.

3.1 Target

The cathode part in sputtering deposition technology. The cathode material is in the form of molecules, atoms or ions under the impact of positively charged cations.

The formula is separated from the cathode and deposited on the anode surface.

3.2 Target blank

The material used as the sputtering material on the cathode.

3.3 Backplane

The material used to support or fix the target.

Note: The target blank and the back plate can be connected by welding (such as brazing, electron beam welding, diffusion welding, etc.), mechanical compounding, and bonding.

3.4 Surface roughness Ra

The processing surface has small spacing and small peak and valley unevenness. The average arithmetic deviation value Ra of the profile, that is, at a certain measurement length l Within the range, the average arithmetic deviation of the absolute value of the distance y from each point on the contour to the center line. Expressed by the formula.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Normative references

Cited by

GB/T 44759-2024High purity nickel target

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