GB/T 36477-2018Semiconductor integrated circuit—Measuring methods for flash memory (English PDF)
半导体集成电路 快闪存储器测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
June 7, 2018
Implementation date
January 1, 2019
Scope
GB/T 36477-2018 is the English-translated version of 半导体集成电路 快闪存储器测试方法.
GB/T 36477-2018 gives the basic methods for measuring semiconductor integrated circuit flash memories.
It covers electrical parameters such as input and output high and low level voltages and currents, output high-resistance state current and supply and leakage currents, and time parameters including transmission, set-up, hold, delay and effective times.
It also tests memory cell functions: the change of a cell from 0 to 1 and from 1 to 0, and special data patterns. General requirements deal with the test equipment, the ambient conditions and the electrical parameter test vectors, and an informative annex outlines the flash memory test process.
It applies to testing flash memory in the semiconductor integrated circuit field. It was issued on 7 June 2018 and has applied since 1 January 2019.
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Document preview — GB/T 36477-2018
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 56
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 General requirements
- 4.1 Equipment and conditions
- 4.2 Electrical parameter test vector
- 5 Detailed requirements
- 5.1 Output High Level Voltage and Output Low Level Voltage
- 5.2 Input high level voltage and input low level voltage
- 5.3 Input High Level Current and Input Low Level Current
- 5.4 Output High Level Current and Output Low Level Current
- 5.5 Output High Resistance State Current
- 5.6 Supply current and leakage current
- 5.7 Transmission time
- 5.8 Establishing time and holding time
- 5.9 Delay time
- 5.10 Effective time (if applicable)
- 5.11 Memory Specific Time
- 5.12 Storage Unit 0 Change 1 Function
- 5.13 Storage unit 1 becomes 0 function
- 5.14 Special Data Graphics Features
- Appendix A (informative) Flash memory test process
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies the basic methods for testing the electrical parameters, time parameters and memory unit functions of semiconductor integrated circuit flash memories.
This standard applies to the testing of electrical parameters, time parameters and memory cell functions of flash memory in the field of semiconductor integrated circuits.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 17574-1998 Semiconductor device integrated circuits - Part 2. Digital integrated circuits
3 Terms and definitions
The following terms and definitions apply to this document.
3.1 Flash memory
A non-volatile memory with electrically erasable and programmable features, the main feature is that it can quickly read and write large blocks.
3.2 Worst case condition
The most unfavorable condition of the power supply voltage, input signal, and load within the nominal range is simultaneously added to the measured flash memory.
4 General requirements
4.1 Equipment and conditions
The electrical characteristics test of the flash memory is not limited to the specific mode and equipment, and should be performed on the automatic test system, including but not limited to measurement Test machine, probe station, high and low temperature impact equipment and oscilloscope.
In the electrical parameter test, the test vector should be developed so that the flash memory is in the required working state before starting the test.
The general requirements for vectors should be in accordance with 4.2, and the test procedure is given in Appendix A.
Unless otherwise specified, the flash memory test shall be in the range of 86 kPa to 106 kPa ambient humidity and 35% to 80% relative humidity.
In progress. The test temperature shall comply with the provisions of 2.1.2 of Section IV of GB/T 17574-1998.
The worst case when testing different parameters may be different. If not all the test conditions take the most unfavorable value, then use the "part" Distinguish between the worst-case conditions and should indicate the deviation from the worst case.
4.2 Electrical parameter test vector
The vector used should be the correct vector for the functional test and the output logic state meets the design specifications.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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