GB/T 35011-2018Microwave circuits—Measuring methods for voltage controlled oscillater (English PDF)
微波电路 压控振荡器测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
March 15, 2018
Implementation date
August 1, 2018
Scope
GB/T 35011-2018 is the English-translated version of 微波电路 压控振荡器测试方法.
GB/T 35011-2018 sets out how to measure the main electrical parameters of microwave voltage-controlled oscillators. It applies to oscillators built with bipolar transistors and field effect transistors, and other voltage-controlled oscillators may follow it.
The methods cover frequency range, output power and output power flatness, tuning sensitivity and linearity, long-term frequency stability, the temperature coefficients of output power and frequency, frequency pulling, frequency pushing, nth harmonic suppression, spurious suppression, phase noise, modulation bandwidth and power dissipation.
It also sets the test conditions and environment, the instruments and equipment to use and the precautions to take, and defines the terms and symbols for each parameter.
Manufacturers and test laboratories use it to characterise these oscillators. It was issued on 15 March 2018 and has applied since 1 August 2018.
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Document preview — GB/T 35011-2018
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 58
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 General requirements
- 4.1 Test Conditions and Environmental Requirements
- 4.2 Test Instruments and Equipment
- 4.3 Notes
- 5 Detailed Request
- 5.1 Frequency Range (fR)
- 5.2 Output Power (P0), Output Power Flatness (deltaP0)
- 5.3 Electrical sensitivity (Kfv), Electrical linearity (Lfv)
- 5.4 Long-term frequency stability (deltaft)
- 5.5 Output Power Temperature Coefficient (alphaP), Frequency Temperature Coefficient (alphaf)
- 5.6 Frequency traction (deltafid)
- 5.7 Inference coefficient (deltaf/deltaV)
- 5.8 nth harmonic suppression (Rfn)
- 5.9 Clutter Suppression (Rfs)
- 5.10 Phase Noise [<= (fm)]
- 5.11 Modulation Bandwidth (Bmod)
- 5.12 Power Dissipation (PS)
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies the test methods for the main electrical parameters of voltage-controlled oscillators (hereinafter referred to as "oscillators").
This standard applies to voltage controlled oscillators manufactured by bipolar transistors (BJTs) and field effect transistors (FETs). Other voltages control the output frequency. Oscillator can refer to use.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest version (including all amendments) applies to this document.
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1. General rules
3 Terms and definitions
The following terms and definitions apply to this document.
3.1 Frequency range
The frequency range that the oscillator can output.
Note: The frequency range is usually expressed in terms of the lowest operating frequency fL and the highest operating frequency fH.
3.2 Long-term frequency stability
In a certain period of time, the relative change in frequency.
3.3 Output power
The power value of the oscillator output signal.
3.4 Output power flatness
The difference between the maximum and minimum output power of the oscillator within the control voltage range.
3.5 Output power temperature coefficient
Within the specified temperature range, the rate of change of the oscillator output power is caused by changes in the ambient temperature. […]
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
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