GB/T 35003-2018Test methods for endurance and data retention of non-volatile memory (English PDF)
非易失性存储器耐久和数据保持试验方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
March 15, 2018
Implementation date
August 1, 2018
Scope
GB/T 35003-2018 is the English-translated version of 非易失性存储器耐久和数据保持试验方法.
GB/T 35003-2018 sets out the test methods for the endurance and data retention of non-volatile memory. It applies to electrically erasable programmable read-only memory (EEPROM), flash memory and integrated circuits with embedded memory.
Endurance is the ability of a device to undergo repeated data rewrites (program/erase cycles), and data retention its ability to keep data in an unbiased state for a specified time.
The standard specifies the temperature chamber, which must hold the set temperature within ±3 °C, and the fixtures that connect the devices, and it defines two procedures: in Procedure I the endurance and data retention tests use different devices, while in Procedure II the same devices go through the endurance test before the data retention test. It was issued on 15 March 2018 and has applied since 1 August 2018.
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Document preview — GB/T 35003-2018
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 56
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 Equipment
- 5 Procedures
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
1 Scope
This standard specifies the methods of non-volatile memory endurance and data retention testing.
This standard applies to electrically erasable programmable read-only memory (EEPROM), flash memory, and embedded memory Integrated circuits (hereinafter referred to as devices).
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest version (including all amendments) applies to this document.
GB/T 17574-1998 Semiconductor device integrated circuit Part 2. Digital integrated circuits
3 Terms and definitions
The terms and definitions defined in GB/T 17574-1998 and the following terms apply to this document.
3.1 Endurance
The device is subjected to a number of consecutive data rewrites (program/erase cycles).
3.2 Data retention
The ability of the device memory cell to retain data in a non-biased state for a specified period of time.
4 Equipment
The temperature chamber can stabilize the temperature within ±3°C of the specified temperature.
The fixture should fit into the temperature chamber and provide a reliable electrical connection.
5 Procedures
5.1 General rules
Device endurance and data retention tests should be performed in accordance with the procedures specified in Table 1.
If the purpose of the data retention test is to verify the data retention of the device when it has not been subjected to endurance testing, use Procedure I. If the number According to the purpose of keeping the test to verify the data retention ability of the device after endurance test, program II is adopted.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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