GB/T 28277-2012Silicon-based MEMS fabrication technology - Measurement method of cutting and pull-press strength of micro bonding area (English PDF)
硅基MEMS制造技术 微键合区剪切和拉压强度检测方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
May 11, 2012
Implementation date
December 1, 2012
Scope
GB/T 28277-2012 is the English-translated version of 硅基MEMS制造技术 微键合区剪切和拉压强度检测方法.
GB/T 28277-2012 is the Chinese standard "Silicon-based MEMS fabrication technology - Measurement method of cutting and pull-press strength of micro bonding area".
Its scope clause reads: This standard specifies the requirements and test methods for silicon-based MEMS process involved small bonding area bonding strength detection.
This standard applies to the use of small shear bond area of \u200b\u200bmicroelectronics technology and related manufacturing and microfabrication technology tension and compression strength test. Its clauses include terms and definitions.
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Document preview — GB/T 28277-2012
National Standard of the People's Republic of China
- ICS
- 31.200
- Classification
- L 55
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Introduction
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 requires
- 4.1 Detection structural design requirements
- 4.2 Preparation of samples structural requirements
- 4.3 detect environmental requirements
- 5 Detection
- 5.1 General
- 5.2 micro structural tension and compression bonding strength detection
- 5.3 micro structural shear bond strength detector
- Appendix A (informative) detector design tension and compression fracture strength and size correspondence table
- Annex B (informative) tension and compression detector test case structure
1 Scope
This standard specifies the requirements and test methods for silicon-based MEMS process involved small bonding area bonding strength detection.
This standard applies to the use of small shear bond area of microelectronics technology and related manufacturing and microfabrication technology tension and compression strength test.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms and definitions
GB/T 19022-2003 Measurement management systems for measurement processes and measuring equipment
3 Terms and Definitions
GB/T 26111-2010 and GB/T 19022-2003 defined and the following terms and definitions apply to this document.
3.1 Bulk micro-machined
Achieve micromachined micro structure by selectively removing a portion of the base material.
NOTE. bulk micromachining process by chemically etching the substrate to remove the unnecessary portion of the processing method using SiO2 or Si3N4 mask to protect the table.
Surface is not etched. Boron-doped layer can also stop the etching of the surface layer in the following sections.
[GB/T 26111-2010, the definition 3.5.16]
3.2 Dry etching
Use may produce a physical and/or chemical reaction of the gas or plasma etching techniques.
Note. the reaction gas may react with the substrate and the electronic energy generated removing material to form the desired shape or size can be divided into dry etching utilizing a chemical reaction.
It should isotropic etching (plasma etching) and the use of direct physical etching reaction (ion etching).
[GB/T 26111-2010, the definition 3.5.18]
3.3 Wet etching
Utilization of material to be engraved can produce a chemical reaction solution or a thin film device structure etching technology.
Note. during wet etching, etching of part of the mask will not need to expose the rest, and then the material is immersed in the reaction solution can be divided to each.
Isotropic etching and anisotropic etching.
[GB/T 26111-2010, the definition 3.5.17]
3.4 Isotropic etching
Etching speed does not vary with the crystal to change direction or energy beam etching process.
[GB/T 26111-2010, the definition 3.5.19]
END: Draft Version (GB/T 28277-2012)
GB/T 46280.2-2025 | GB/T 43770-2024 | GB/T 15651.7-2024 | GB/T 28276-2012 | GB/T 28275-2012 | GB/T 28274-2012 |
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 18 pages — is available in the English PDF.
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