GB/T 21548-2021Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems (English PDF)
光通信用高速直接调制半导体激光器的测量方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
April 30, 2021
Implementation date
August 1, 2021
Scope
GB/T 21548-2021 is the English-translated version of 光通信用高速直接调制半导体激光器的测量方法.
GB/T 21548-2021 fixes the measurement methods for the high speed directly modulated semiconductor lasers used in optical fibre communication.
It gives the classification of these lasers and their modules and then the methods by which their optical and electrical characteristics are measured - the threshold and slope, the spectrum, the modulation response, the extinction ratio, the eye diagram and the temperature behaviour.
It applies to the lasers and modules used in optical transport and access networks and in data centres, and analogue and other optical systems may use it for reference.
Laser makers, module houses and test laboratories use it. It replaces GB/T 21548-2008, was issued on 30 April 2021 and has applied since 1 August 2021.
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Document preview — GB/T 21548-2021
National Standard of the People's Republic of China
- ICS
- 31.260
- Classification
- M 31
- Replacing
- GB/T 21548-2008
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 Abbreviations
- 5 Measuring method
- Appendix A (informative appendix) Semiconductor laser component structure
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 21548-2008 "Measurement method of high-speed direct modulation semiconductor lasers for optical communications".
Compared with GB/T 21548-2008, the main technical changes are as follows.
---Modified the scope description (see Chapter 1, Chapter 1 of the 2008 edition);
--- Deleted GB/T 17626 series standards, YD/T 701-1993, YD/T 1111.2-2001, YD/T 767-1995 and
IEC 62007-2 cited GB/T 15651-1995 and GB/T 31359-2015 (see Chapter 2, 2008 Chapter 2 of the Year Edition);
--- Deleted peak wavelength and center wavelength, threshold current, optical power-drive current linearity, distribution feedback, spectral width, multiple quantum The definitions of well distributed feedback, side mode suppression ratio, carrier-to-noise ratio, combined second-order intermodulation, combined third-order beat, and modified semiconductor lasers The definition of its components (see Chapter 3, 3.2 of the 2008 edition);
--- Deleted many abbreviations such as analog bandwidth, and added PAM4 abbreviations (see Chapter 4, 2008 edition 3.1);
--- Deleted the laser characteristics and classification (see 5.2 in the 2008 edition);
---Added the description of the measurement scheme for wavelength division multiplexing semiconductor laser components (see 5.1);
---Modified the requirements for environmental conditions and measuring instruments (see 5.2 and 5.3, 5.3.1 of the 2008 edition);
---Deleted requirements for measuring equipment and instruments (see 5.3.1.2, 5.3.2.1, 5.3.3.1, 5.3.4.1, 5.3.5.1, 5.3.6.1, 5.3.7.1, 5.3.8.1, 5.3.9.1, 5.3.10.1, 5.3.11.1, 5.3.12.1);
---Modified the threshold current measurement method (see 5.4.2, 5.3.3 of the 2008 edition);
---The measurement method of slope efficiency has been added (see 5.4.2);
---Added the description of the eye diagram measurement method of four-level pulse amplitude modulation (see 5.4.6);
---Modified the measurement of S11 parameters (see 5.4.7, 5.3.8 of the 2008 edition);
---Modified the measurement of the wavelength-temperature drift coefficient (see 5.4.10, 5.3.11 of the 2008 edition);
---Modified the measurement method of relative intensity noise (see 5.4.11, 5.3.12 of the 2008 edition);
---The measurement methods of carrier-to-noise ratio, combined second-order intermodulation and combined third-order beat, reliability test and classification and product inspection methods have been deleted (See Appendix A, Appendix B, Appendix C and Appendix D of the 2008 edition);
---Added the single-channel semiconductor laser component packaging structure and the wavelength division multiplexing laser component packaging structure diagram (see appendix A).
1 Scope
This standard specifies the classification and measurement methods of high-speed direct modulation lasers and their components for optical communications.
This standard applies to high-speed direct modulation lasers and their components used in optical communication systems such as optical transmission networks, optical access networks, and data centers.
The photoelectric characteristics measurement of the analog optical communication system and other optical systems used in the laser and its components can also be used as a reference.
2 Normative references
The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this document. For undated reference documents, the latest version (including all amendments) is applicable to this document.
GB/T 15651-1995 Semiconductor Devices Discrete Devices and Integrated Circuits Part 5: Optoelectronic Devices
GB/T 31359-2015 Semiconductor laser test method
3 Terms and definitions
The following terms and definitions defined in GB/T 15651-1995 apply to this document.
3.1 Semiconductor laser
A laser made of III-V group compound semiconductor heterostructure materials.
Note: III-V group compound semiconductor heterostructure materials (such as GaAlAs/GaAs, InGaAsP/InP, InAlGaAs/InP).
3.2 Semiconductor laser subassembly
A hybrid composed of semiconductor laser chips, peripheral connection elements, backlight detectors, microlenses, optical isolators, coupled fibers, tube cases, etc. Integrated pieces.
3.3 Direct modulation of optical power density directly
The modulated electrical signal directly controls the laser drive current, so that the laser output light intensity changes with the amplitude of the modulated electrical signal.
3.4 Slope efficiency
Differential efficiency The ratio of the laser output optical power difference to its corresponding driving current difference.
Note 1.Expressed in S, the unit is milliwatt per milliampere (mW/mA), and the definition is shown in formula (1). S=deltaP/deltaI= (P01-P02)/(I01-I02) (1) Where.
P01---The output optical power value of the linear region, usually 90% of the rated optical power, in milliwatts (mW);
P02---The output optical power value of the linear region, usually 10% of the rated optical power, in milliwatts (mW);
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 21 pages — is available in the English PDF.
Referenced standards
Similar standards
Editions of GB/T 21548
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 21548-2021 | Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems | current edition | Current |
| GB/T 21548-2008 | Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems | previous edition | Superseded |
This page sells the current edition, GB/T 21548-2021. Earlier editions are listed for reference only.
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Related Standards
GB/T 15651-1995 — Semiconductor devices--Discrete devices and integrated circuits. Part 5: Optoelectronic devices
GB/T 31359-2015 — Test methods of semiconductor lasers
GB/T 7251.4-2026 — Low-voltage switchgear and controlgear assemblies - Part 4: Particular requirements for assemblies for construction sites (ACS)
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