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GB/T 11071-2018Zone-refined germanium ingot (English PDF)

区熔锗锭

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Issued by

General Administration of Quality Supervision, Inspection and Quarantine; Standardization Administration of the PRC

Level / Type

National · Recommended

Issue date

December 28, 2018

Implementation date

July 1, 2019

Scope

GB/T 11071-2018 is the English-translated version of 区熔锗锭.

GB/T 11071-2018 is the Chinese standard "Zone-refined germanium ingot". Its scope clause reads: This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and order form of the zone melting ingot.

(or contract) content. This standard is applicable to the zone melting bismuth ingot prepared by the zone melting purification process using the reduced bismuth ingot and the ruthenium single crystal return material as raw materials.

ZGe-0 area The smelting ingot is mainly used to prepare high-purity germanium single crystal for semiconductor and high-purity germanium detectors; the ZGe-1 region melting ingot is mainly used for preparing infrared optics, and bismuth single crystals for solar cells and various types of bismuth-chromium, bismuth-silicon alloys, and the like. Its clauses include requirements.

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Document preview — GB/T 11071-2018

National Standard of the People's Republic of China

ICS
77.150
Classification
H 66
Replacing
GB/T 11071-2006

Issued by: General Administration of Quality Supervision, Inspection and Quarantine; Standardization Administration of the PRC

Contents

  • 1 Scope
  • 2 Normative references
  • 3 Requirements

1 Scope

This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and order form of the zone melting ingot.

(or contract) content.

This standard is applicable to the zone melting bismuth ingot prepared by the zone melting purification process using the reduced bismuth ingot and the ruthenium single crystal return material as raw materials. ZGe-0 area

The smelting ingot is mainly used to prepare high-purity germanium single crystal for semiconductor and high-purity germanium detectors; the ZGe-1 region melting ingot is mainly used for preparing infrared optics.

And bismuth single crystals for solar cells and various types of bismuth-chromium, bismuth-silicon alloys, and the like.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.

Pieces. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 4326 extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method

YS/T 602 area melting bismuth ingot resistivity test method two-probe method

3 requirements

3.1 Product Classification

The zone melting ingot is divided into two grades according to electrical properties. ZGe-0, ZGe-1.

ZGe-

Representation zone melting ingot

Arabic numerals, indicating product grade

3.2 Electrical performance

The electrical properties of the zone melting ingots shall comply with the requirements of Table 1. The resistivity can be selected to be tested at 20 ° C or 23 ° C.

And meet the requirements of Table 1.

Table 1 Electrical properties

Brand

Resistivity/(ohm · cm) Detection of single crystal parameters (77K) (20±0.5) °C (23±0.5) °C

Carrier concentration

Cm-3

Carrier mobility

Cm-3/(V·S)

ZGe-0 >=50 >=47 <=1.5×1012 >=3.7×104

ZGe-1 >=50 >=47 - -

3.3 Dimensions

The cross section of the zone melting ingot should be trapezoidal, and the height difference between the ends of the melting and ingot of the same root zone should be no more than 4mm. Zone melting ingot

GB/T 9967 | GB/T 39859 | GB/T 23513.5 | GB/T 11070 | GB/T 11069 | […]

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.

Referenced standards

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