SJ 20524-1995Measuring methods of shielding effectiveness of materials (English PDF)
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Issued by
Ministry of Industry and Information Technology of PRC
Level / Type
National · Mandatory
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
SJ 20524-1995 (Measuring methods of shielding effectiveness of materials) is available as an English-translated PDF.
SJ 20524-1995 is the Chinese standard "Measuring methods of shielding effectiveness of materials". Its scope clause reads: This standard specifies the methods for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals.
This standard applies to the measurement of electrical parameters of semi-insulating GaAs single crystals, which have a resistivity in the range of 104 ohm·cm ~ 109 ohm·cm.
Its clauses include terms and definitions; principles of the method; interfering factors; instruments; environmental requirements; sample preparation; measurement procedure.
It was issued by the Ministry of Industry and Information Technology of PRC on 2015-04-30 and took effect on 2015-10-01.
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Document preview — SJ 20524-1995
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 83
Issued by: Ministry of Industry and Information Technology of PRC
Contents
- Foreword...3
- 1 Scope...4
- 2 Normative references...4
- 3 Terms and definitions...4
- 4 Principles of the method...4
- 5 Interfering factors...5
- 6 Instruments...5
- 7 Environmental requirements...5
- 8 Sample preparation...5
- 9 Measurement procedure...5
- 10 Calculations...6
- 11 Precision...7
- 12 Reports...7
1 Scope
This standard specifies the methods for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals.
This standard applies to the measurement of electrical parameters of semi-insulating
GaAs single crystals, which have a resistivity in the range of 104 ohm·cm ~ 109 ohm·cm.
2 Normative references
The following documents are essential to the application of this document. For the dated documents, only the versions with the dates indicated are applicable to this document;
for the undated documents, only the latest version (including all the amendments) is applicable to this standard.
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 14264 Semiconductor materials - Terms and definitions
3 Terms and definitions
The terms and definitions, which are defined in GB/T 14264, apply to this document.
4 Principles of the method
When a current I is passed along the X-axis direction, on a rectangular semiconductor sheet, AND a magnetic field B is applied in the Z-axis direction, a potential difference
VH is generated in the direction, which is perpendicular to the current and magnetic field (that is, the Y-axis direction). This phenomenon is called Hall effect, wherein VH is called the Hall voltage. The cause of the Hall effect is the Lorentz force of the charged particles, that form the directional movement of the current, that is, the carrier in the magnetic field. The Hall effect can be used to measure the electrical parameters of the semi-insulating GaAs single crystals.
5 Interfering factors
Measurement temperature, ohmic contact electrode preparation, etc. will all affect the measurement results.
6 Instruments
The measuring instrument consists of the following parts:
a) Hall test system. The applied magnetic field strength is 0.3 T ~ 1.0 T; the uniformity of the magnetic field within the sample measurement range is better than 1%; the input impedance is lower than 1013 ohm; the accuracy of the current source is better than 1%; the temperature accuracy is better than 0.1 °C;
b) Micrometer, accuracy ±0.01 mm;
c) Sample holder, protected from light.
7 Environmental requirements
The ambient temperature is 22 °C ~ 24 °C; the relative humidity is less than 60%. The test shielding room shall not have mechanical shock, vibration, or electromagnetic interference.
8 Sample preparation
8.1 Cutting, grinding, cleaning of specimen
Follow the requirements of GB/T 4326, to carry out cutting, grinding, cleaning of specimen.
8.2 Ohm contact electrodes
Follow the requirements of GB/T 4326, use In, AuGe/Au or AuGe/Ni alloys to prepare ohmic contact electrodes.
9 Measurement procedure
Make measurement, according to the measurement steps which are specified in GB/T
4326.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
Referenced standards
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Related Standards
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 4326-2025 — Extrinsic semiconductor single crystals - Measurement of Hall mobility and Hall coefficient
GB/T 43260-2023 — Imported cold-chain food traceability - Requirements for traceability information management
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