GB/Z 102.17-2026Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation (English PDF)

Foreword

This document is a standard or guiding technical document.

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting.

This document is Part 17 of "Discrete Semiconductor Devices". The following parts of "Discrete Semiconductor Devices" have been published.

---Part 1: General Provisions (GB/T 17573-1998);

---Part 2: Rectifier Diodes (GB/T 4023-2015);

---Part 2-1.Blank Detailed Specification for Environmental or Case-Rated Rectifier Diodes (Including Avalanche Rectifier Diodes) Below 100A (GB/T 6351-1998);

---Part 2-2.Rectifier Diodes (Including Avalanche Rectifier Diodes) with Environmental and Case Ratings Greater Than 100A - Blank Detailed Specification (GB/T 16894-1997);

---Part 3: Signal (including switching) diodes and regulating diodes (GB/T 6571-1995);

---Part 3-1.Blank Detailed Specifications for Signal Diodes, Switching Diodes and Controlled Avalanche Diodes (GB/T 6588-2000);

---Part 3-2.Signal (including switching) diodes and regulating diodes; voltage regulating diodes; voltage reference diodes (excluding...)

(Including temperature-compensated precision reference diodes) Blank detailed specification (GB/T 6589-2002);

---Part 4: Microwave Devices (GB/T 20516-2006);

---Part 4-1.Microwave Diodes and Transistors - Microwave Field-Effect Transistors - Blank Detailed Specification (GB/T 21039.1-2007);

---Part 6: Thyristors (GB/T 15291-2015);

---Part 6-1.Blank Detailed Specification for Environmental or Package-Rated Reverse Blocking Thyristors Below 100A (GB/T 6352-

1998);

---Part 6-2.Blank Detailed Specification for Bidirectional Tripolar Thyristor Transistors with Ambient or Case Rating Below 100A (GB/T 6590-

1998);

---Part 6-3.Blank Detailed Specification for Reverse Blocking Thyristors with Current Greater Than 100A, Ambient and Case Ratings (GB/T 13150-

2005);

---Part 7: Bipolar Transistors (GB/T 4587-2023);

---Part 7-1.Blank detailed specification for bipolar transistors rated for high and low frequency amplification environments (GB/T 6217-1998);

---Part 7-2.Blank detailed specification for packaged bipolar transistors rated for low-frequency amplification (GB/T 7577-1996);

---Part 7-3.Blank Detailed Specification for Bipolar Transistors for Switching (GB/T 6218-1996);

---Part 7-4.Blank Detailed Specification for High-Frequency Amplifier Packaged Bipolar Transistors (GB/T 7576-1998);

---Part 8: Field-Effect Transistors (GB/T 4586-1994);

---Part 8-1.Blank Detailed Specification for Single-Gate Field-Effect Transistors Below 1GHz and 5W (GB/T 6219-1998);

---Part 8-3.Blank Detailed Specification for Cased Field-Effect Transistors for Rated Switching (GB/T 15449-1995);

---Part 9: Insulated Gate Bipolar Transistor (IGB T) (GB/T 29332-2012);

---Part 10: General Specification for Discrete Devices and Integrated Circuits (GB/T 4589.1-2006);

---Part 11: Specifications for Discrete Components (GB/T 12560-1999);

---Part 17: Magnetic and Capacitive Couplers with Basic and Reinforced Insulation.

This document is equivalent to IEC 60747-17:2020 "Semiconductor devices - Part 17: Magnetic couplers with basic insulation and reinforced insulation".

The document type for "Capacitive Couplers" has been changed from an IEC standard to a standardized guiding technical document in my country.

The following minimal editorial changes have been made to this document.

---Incorporating technical errata from IEC 60747-17/COR1.2021, the relevant clauses are indicated by vertical double margins.

The line (||) is marked.

---The Chinese name for the term "safety factor" has been added.

Introduction

Semiconductor discrete devices are common basic products in the electronics industry, serving as the most fundamental units in electronic systems. Their performance and reliability directly affect...

This affects engineering quality and reliability. "Discrete Semiconductor Devices" is the fundamental standard for semiconductor discrete devices, and it is essential for regulating semiconductor discrete devices.

The parameter system, verification, testing methods and quality assessment of the device play an important role and are planned to consist of 26 parts.

---Part 1: General Provisions. This section aims to define the general principles or requirements applicable to standards for various discrete devices.

---Part 2: Rectifier Diodes. The purpose is to define the terminology, symbolic representation, basic ratings, and characteristics of rectifier diodes.

Product-specific requirements such as testing methods.

---Part 2-1.Blank detailed specifications for environmental or case-rated rectifier diodes (including avalanche rectifier diodes) below 100A.

The purpose is to establish detailed specifications for environmentally or packaged rated rectifier diodes (including avalanche rectifier diodes) with an A rating of 100A or below.

Basic requirements.

---Part 2-2.Rectifier Diodes (including avalanche rectifier diodes) with environmental and case ratings greater than 100A - Blank Detail Specification The purpose is to specify the environmental and case ratings of rectifier diodes (including avalanche rectifier diodes) with an A rating of 100A or higher.

The basic requirements of the standard.

---Part 3: Signal (including switching) diodes and regulating diodes. The purpose is to specify signal diodes (including switching diodes)

Terminology, symbols, basic ratings, and characteristics of voltage reference diodes, voltage regulating diodes, and current regulating diodes.

Product-specific requirements such as sex and testing methods.

---Part 3-1.Blank Detailed Specification for Signal Diodes, Switching Diodes, and Controlled Avalanche Diodes. The purpose is to specify the design and implementation of signal diodes, switching diodes, and controlled avalanche diodes.

The basic requirements of detailed specifications for diodes, switching diodes, and controlled avalanche diodes.

---Part 3-2.Signal (including switching) diodes and regulating diodes; voltage regulating diodes; voltage reference diodes (excluding...)

This includes a detailed specification for temperature-compensated precision reference diodes. The purpose is to define and specify signal (including switching) diodes and modulation...

Detailed specifications for voltage regulation diodes, voltage reference diodes (excluding temperature-compensated precision reference diodes)

This requirement.

---Part 4: Microwave Devices. The purpose is to define the terminology, symbolic representation, basic ratings and characteristics, and testing methods for microwave devices.

Product-specific requirements such as methods.

---Part 4-1.Microwave Diodes and Transistors - Microwave Field-Effect Transistors - Blank Detailed Specification. The purpose is to specify and formulate micro...

Basic requirements for detailed specifications of microwave field-effect transistors and diodes.

---Part 6: Thyristors. The purpose is to define the terminology, symbol, basic ratings and characteristics, and test methods for thyristors.

Specific requirements for products, etc.

---Part 6-1.Blank Detailed Specification for Environmental or Package-Rated Reverse Blocking Thyristors Below 100A. Purpose.

The regulations specify the basic requirements for developing detailed specifications for reverse blocking triode thyristors with an environmental rating of 100A or below.

---Part 6-2.Blank Detailed Specification for Bidirectional Tripolar Thyristor Transistors with Environmental or Case Ratings Below 100A. The purpose is to specify...

The basic requirements for developing detailed specifications for bidirectional tripolar thyristors rated for environments or in housings below 100A are defined.

---Part 6-3.Blank Detailed Specification for Reverse Blocking Thyristors with Current Greater Than 100A, Environmental and Case Ratings. Purpose.

The basic requirements for the detailed specifications of reverse blocking triode thyristors with an environment current of 100A or higher and a casing rating are stipulated.

---Part 7: Bipolar Transistors. The purpose is to define the terminology and documentation for several types of bipolar transistors (excluding microwave transistors).

Product-specific requirements such as character symbols, basic ratings and characteristics, and test methods.

---Part 7-1.Blank Detailed Specification for Bipolar Transistors Rated for High and Low Frequency Amplification Environments. The purpose is to specify the requirements for high and low frequency amplification environments.

The basic requirements of the detailed specifications for bipolar transistors rated for amplification environments.

---Part 7-2.Blank Detailed Specification for Low-Frequency Amplifier Package-Rated Bipolar Transistors. The purpose is to specify the design of low-frequency amplifiers.

The basic requirements of the detailed specifications for packaged bipolar transistors.

---Part 7-3.Blank Detailed Specification for Bipolar Transistors for Switching. The purpose is to specify and formulate detailed specifications for bipolar transistors for switching.

The basic requirements of detailed specifications.

---Part 7-4.Blank Detailed Specification for High-Frequency Amplifier Tubes and Rated Bipolar Transistors. The purpose is to specify the design of high-frequency amplifier tubes.

Basic requirements of the detailed specifications for case-rated bipolar transistors.

---Part 8: Field-Effect Transistors. The purpose is to define the terminology, symbolic symbols, basic ratings, and...

Product-specific requirements such as characteristics and testing methods.

---Part 8-1.Blank Detailed Specification for Single-Gate Field-Effect Transistors Below 1GHz and 5W. The purpose is to specify the requirements for 1GHz...

Basic requirements for detailed specifications of single-gate field-effect transistors below 5W.

---Part 8-3.Blank Detailed Specification for Case-Based Rated Switching Field-Effect Transistors. The purpose is to specify the design of case-based rated switching field-effect transistors.

The basic requirements for detailed specifications of field-effect transistors.

---Part 9: Insulated Gate Bipolar Transistor (IGB T). The purpose is to define the terminology for several types of Insulated Gate Bipolar Transistors (IGB Ts).

Product-specific requirements such as textual symbols, basic ratings and characteristics, and test methods.

---Part 10: General Specification for Discrete Devices and Integrated Circuits. The purpose is to define the general procedures for quality assessment of semiconductor devices, specifying...

General principles for electrical property testing methods, climate and mechanical testing, and durability testing.

---Part 11: Discrete Device Specifications. The purpose is to define the quality assessment procedures required for evaluating semiconductor discrete devices.

The content includes inspection requirements, screening sequences, sampling requirements, and test and experimental methods.

---Part 15: Insulated Power Semiconductor Devices. The purpose is to define the terminology, symbolic representation, and basic principles of insulated power semiconductor devices.

Product-specific requirements such as ratings, characteristics, and test methods.

---Part 17: Magnetic and Capacitive Couplers with Basic and Reinforced Insulation. The purpose is to specify the basic and reinforced insulation...

Product-specific requirements for electromagnetic and capacitive couplers, including terminology, symbols, basic ratings and characteristics, and test methods.

The standard for "Discrete Semiconductor Devices" adopts all parts of IEC 60747 to ensure consistency with international standards and to realize discrete semiconductor devices.

The parameter system, verification methods, testing methods, reliability evaluation, and quality level of components are aligned with international standards. By formulating this document, a framework for semiconductor manufacturing is established.

This provides a basis and important support for the research, development, production and testing of discrete devices.

1 Scope

This document specifies the terminology, basic ratings, characteristics, safety tests, and test methods for magnetic couplers and capacitive couplers, and defines the basic...

The principles, isolation requirements, and isolation characteristics of insulated and reinforced insulated magnetic couplers and capacitive couplers.

This document applies to all types of semiconductor devices that use magnetic or capacitive coupling principles to achieve signal transmission and electrical isolation between circuits.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated references, however, are only considered valid references.

The version corresponding to this date applies to this document; for undated references, the latest version (including all amendments) applies to this document.

GB/T 2423.1-2008 Environmental testing of electrical and electronic products - Part 2: Test methods - Test A. Low temperature (IEC 60068-2-1.

2007, IDT)

GB/T 2423.2-2008 Environmental testing of electrical and electronic products - Part 2: Test methods - Test B. High temperature (IEC 60068-2-2.

2007, IDT)

GB/T 2423.4-2008 Environmental testing of electrical and electronic products - Part 2: Test methods - Test Db. Alternating damp heat (12h)

(12h cycle) (IEC 60068-2-30:2005, IDT)

GB/T 2423.22-2012 Environmental testing - Part 2: Test methods - Test N. Temperature change (IEC 60068-2-14.

2009, IDT)

GB/T 2423.28-2005 Environmental testing of electrical and electronic products - Part 2: Test methods - Test T. Soldering (IEC 60068-2-20.

1979, IDT)

GB/T 2423.50-2012 Environmental Testing for Electrical and Electronic Products - Part 2: Test Methods - Test Cy. Constant Damp Heat - Mainly Accelerated testing for components (IEC 60068-2-67:2019, IDT)

GB/T 4207-2012 Determination of Tracking Resistance Index and Relative Tracking Index of Solid Insulating Materials (IEC 60112-1)

2020, IDT)

GB/T 11026.1-2016 Electrical insulating materials - Heat resistance - Part 1: Aging procedures and evaluation of test results (IEC 60216-1)

2013, IDT)

GB/T 11026.2-2012 Electrical insulating materials - Heat resistance - Part 2: Selection of test criteria (IEC 60216-2)

2005, IDT)

GB/T 16935.1-2008 Isolation and Coordination of Equipment in Low-Voltage Systems - Part 1: Principles, Requirements and Tests (IEC 60664-1.

2020, IDT)

GB/T 8411.2-2008 Ceramic and glass insulating materials - Part 2: Test methods (IEC 60672-2:1999, IDT)

GB/T 5169.5-2020 Fire Hazard Testing of Electrical and Electronic Products - Part 5: Test Flame Needle Flame Test Method and Apparatus Validate the test methods and guidelines (IEC 60695-11-5:2016, IDT).

GB/T 29310-2012 Guidelines for Statistical Analysis of Electrical Insulation Breakdown Data (IEC 62539:2007, IDT)

IEC 62368-1:2018 Audio/video, information and communication technology equipment - Part 1: Safety requirements