GB/T 4937.36-2025Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration，steady state (English PDF)

Foreword

This document is in accordance with GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting is scheduled.

This document is Part 36 of GB/T 4937, "Mechanical and Climatic Testing Methods for Semiconductor Devices". GB/T 4937 has been published.

The following section.

---Part 1: General Provisions;

---Part 2: Low Pressure;

---Part 3: External Visual Inspection;

---Part 4: Highly Accelerated Steady-State Damp Heat Test (HAST);

---Part 8: Sealing;

---Part 10: Mechanical Impact Devices and Components;

---Part 11: Rapid Temperature Change in Two-Liquid Tank Method;

---Part 12: Sweep Frequency Vibration;

---Part 13: Salt Spray;

---Part 14: Lead Strength (Lead Wire Secureness);

---Part 15: Solder Heat Resistance of Through-Hole Mounting Devices;

---Part 16: Particle Collision Noise Detection (PIND);

---Part 17: Neutron Irradiation;

---Part 18: Ionizing Radiation (Total Dose);

---Part 19: Chip Shear Strength;

---Part 20: Combined effects of moisture and soldering heat on molded surface mount devices;

---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat;

---Part 21: Solderability;

---Part 22: Bond Strength;

---Part 23: High-Temperature Operating Life;

---Part 24: Accelerated Moisture Resistance Test with Unbiased Strong Accelerated Stress;

---Part 25: Temperature Cycling;

---Part 26: Electrostatic Discharge (ESD) Sensitivity Testing Human Model (HBM);

---Part 27: Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM);

---Part 29: Latch Test;

---Part 30: Pretreatment of Unsealed Surface Mount Devices Prior to Reliability Testing;

---Part 31: Flammability of Molded Devices (Internal Causes);

---Part 32: Flammability of Molded Devices (Externally Caused);

---Part 33: Accelerated Moisture-Resistant, Non-Biased High-Pressure Cooking;

---Part 34: Power Cycling;

---Part 35: Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components;

---Part 36: Steady-state acceleration;

---Part 37: Plate Drop Test Method Using Accelerometers;

---Part 38: Soft Fault Testing Methods for Semiconductor Devices with Storage;

---Part 39: Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices;

---Part 40: Plate Drop Test Method Using Strain Gauges;

---Part 42: Temperature and Humidity Storage;

---Part 44: Test methods for single-event effects (SEE) by neutron irradiation on semiconductor devices.

This document is equivalent to IEC 60749-36:2003 "Semiconductor devices - Mechanical and climatic testing methods - Part 36: Steady-state acceleration".

Spend".

This document includes a new chapter on "Terms and Definitions".

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).

Introduction

Semiconductor devices are general-purpose basic products in the electronics industry chain and are the most basic units in electronic systems. GB/T 4937 "Semiconductor Devices" the "Mechanical and Climate Test Methods for Semiconductor Devices" is a fundamental and universal standard for testing semiconductor devices, used for evaluating and assessing semiconductors.

The quality and reliability of the device play a crucial role. It is planned to consist of 44 parts.

---Part 1: General Principles. The purpose is to establish general guidelines for mechanical and climatic testing methods for semiconductor devices.

---Part 2: Low Pressure. The purpose is to test the ability of components and materials to avoid electrical breakdown failure.

---Part 3: External Visual Inspection. The purpose is to inspect whether the materials, design, structure, markings, and manufacturing processes of semiconductor devices meet the required standards.

Requirements for procurement documents.

---Part 4: Strong Accelerated Steady-State Damp Heat Test (HAST). The purpose is to specify the Strong Accelerated Steady-State Damp Heat Test (HAST) to detect...

To test the reliability of non-hermetically sealed semiconductor devices in humid environments.

---Part 5: Steady-State Temperature and Humidity Offset Lifetime Test. The purpose is to specify the steady-state temperature and humidity offset lifetime test to detect non-hermetic leaks.

Reliability of packaged semiconductor devices in humid environments.

---Part 6: High-Temperature Storage. The purpose is to investigate the effects of high-temperature storage on semiconductor devices without applying electrical stress.

---Part 7: Internal Moisture Measurement and Other Residual Gas Analysis. The purpose is to assess the quality of the packaging process and provide information on the gas content.

Information on the long-term chemical stability of the substance within the shell.

---Part 8: Sealing. The purpose is to detect the leakage rate of semiconductor devices.

---Part 9: Marking Durability. The purpose is to test the durability of markings on semiconductor devices.

---Part 10: Mechanical Shock Devices and Components. The purpose is to test semiconductor devices and printed circuit board assemblies against moderate stress.

The ability to adapt to shocks.

---Part 11: Rapid Temperature Change Two-Batter Method. The purpose is to define the rapid temperature change (two-batter method) for semiconductor devices.

The test procedures, failure criteria, and other related content.

---Part 12: Sweep Frequency Vibration. The purpose is to detect the effect of vibration on semiconductor devices within a specified frequency range.

---Part 13: Salt Spray. The purpose is to test the corrosion resistance of semiconductor devices.

---Part 14: Lead Strength (Lead Bonding). The purpose is to test the bonding strength of semiconductor device lead/package interfaces and leads.

Solid.

---Part 15: Solder Heat Resistance of Through-Hole Mounted Devices. The purpose is to test the solder heat resistance of through-hole mounted solid-state packaged semiconductor devices.

The ability to withstand the thermal stress generated by wave soldering or soldering leads.

---Part 16: Particle Collision Noise Detection (PIND). The purpose is to define the detection of free particles within cavity devices.

method.

---Part 17: Neutron Irradiation. The purpose is to detect the susceptibility of semiconductor devices to performance degradation in a neutron environment.

---Part 18: Ionizing Radiation (Total Dose). The purpose is to define the criteria for assessing the effects of low-dose-rate ionizing radiation on semiconductor devices.

Accelerated annealing test method.

---Part 19: Chip Shear Strength. The purpose is to test the materials used in mounting semiconductor chips onto sockets or substrates and...

Completeness of process steps.

---Part 20: Combined Effects of Moisture and Soldering Heat on Molded Surface Mount Devices. The aim is to simulate storage conditions in warehouses or...

The moisture absorbed by the plastic-sealed surface of semiconductor devices in a dry packaging environment is then evaluated to assess their resistance to soldering heat.

---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat. Purpose the regulations govern the handling, packaging, transportation, and use of surface-mount semiconductor devices in plastic packages that are sensitive to the combined effects of moisture and soldering heat.

method.

---Part 21: Solderability. The purpose is to specify the solderability of component package leads that can be soldered using lead-tin solder or lead-free solder.

Solderability test procedure.

---Part 22: Bond Strength. The purpose is to test the bond strength of semiconductor devices.

---Part 23: High-Temperature Operating Life. The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time.

Experimental methods.

---Part 24: Accelerated Moisture Resistance Test with No Bias. The purpose is to test the performance of non-hermetic solid-state devices under humid conditions.

Reliability under environmental conditions.

---Part 25: Temperature Cycling. The purpose is to test the ability of semiconductor devices, components, and circuit board assemblies to withstand extreme high temperatures and extreme...

The ability of low-temperature alternating forces to induce mechanical stress.

---Part 26: Human Model (HBM) for Electrostatic Discharge (ESD) Sensitivity Testing. The aim is to specify reliable and repeatable...

HBMESD testing method.

---Part 27: Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM). The purpose is to specify reliable and repeatable...

MMESD testing method.

---Part 28: Electrostatic Discharge (ESD) Sensitivity Testing of Charged Device Models (CDMs) at the Device Level. The purpose is to specify...

A reliable and repeatable CDMESD testing method.

---Part 29: Latch-up Testing. The purpose is to specify methods for testing the latch-up characteristics of integrated circuits and criteria for latch-up failure.

---Part 30: Pre-treatment of unsealed surface mount devices prior to reliability testing. The purpose is to specify the pre-treatment procedures for unsealed surface mount devices.

Standard procedures for pre-processing devices before reliability testing.

---Part 31: Flammability of Molded Devices (Internal Causes). The purpose is to test whether flammability of molded devices is caused by overload.

It burns due to internal heat.

---Part 32: Flammability of Molded Devices (Externally Caused). The purpose is to test whether flammability of molded devices is caused by external heat.

It burns.

---Part 33: Accelerated Moisture-Resistant, Bias-Free High-Pressure Cooking. The aim is to confirm the internal failure mechanism of semiconductor device packages.

---Part 34: Power Cycling. The aim is to achieve power cycling by applying cyclic power losses to the chips and connectors inside semiconductor devices.

Test the heat and mechanical stress resistance of semiconductor devices.

---Part 35: Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components. The purpose is to specify the acoustic microscopy requirements for plastic-encapsulated electronic components.

Methods for detecting defects (delamination, cracks, voids, etc.) in components.

---Part 36: Steady-State Acceleration. The purpose is to specify the test method for the steady-state acceleration of cavity semiconductor devices in order to detect their structural properties.

Defects in structure and mechanical type.

---Part 37: Plate Drop Test Method Using Accelerometers. The purpose is to specify the plate drop test method using accelerometers.

The method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.

---Part 38: Soft Fault Testing Methods for Semiconductor Devices with Storage. The purpose is to specify the testing methods for semiconductor devices with storage.

Experimental methods for soft error sensitivity in high-energy particle environments (such as alpha radiation).

---Part 39: Measurement of Moisture Diffusivity and Water Solubility of Organic Materials for Semiconductor Devices. The purpose is to specify the applications of organic materials in semiconductor devices...

Methods for measuring the moisture diffusivity and water solubility of organic materials used in the packaging of conductor devices.

---Part 40: Plate Drop Test Method Using Strain Gauges. The purpose is to specify the method for plate drop tests using strain gauges.

This method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.

---Part 41: Test methods for the reliability of non-volatile memory. The purpose is to specify the effective durability and reliability of non-volatile memory.

According to the requirements of the holding and temperature cycling test.

---Part 42: Temperature and Humidity Storage. The purpose is to specify test methods for assessing the ability of semiconductor devices to withstand high temperature and humidity environments.

---Part 44: Test methods for single-event effects (SEE) under neutron irradiation in semiconductor devices. The purpose is to specify the testing methods for high-density integrated circuits.

Test methods for single-event effect (SEE) in circuits.

GB/T 4937 (all parts) are adopted one-to-one with IEC 60749 (all parts) to ensure that the test methods for semiconductor devices are consistent with national standards.

This will ensure consistency with international standards, aligning semiconductor device testing methods, reliability evaluation, and quality levels with international practices. By developing this series of standards, [the following criteria will be established].

Standardized test methods and stresses are essential for evaluating the environmental adaptability of semiconductor devices, which is crucial for the research, production, testing, and use of semiconductor devices.

It is of great significance, and at the same time, it supplements and improves the semiconductor device standard system.

Mechanical and Climate Testing Methods for Semiconductor Devices Part 36: Steady-state acceleration

1 Scope

This document describes the experimental method for steady-state acceleration of cavity semiconductor devices. The purpose of this experiment is to detect those that do not necessarily pass through...

It detects structural and mechanical defects through shock and vibration. It serves as a high-stress (destructive) test to determine defects in packaging, internal metallization, and...

The mechanical strength limits of lead systems, chip or substrate soldering, and other components of microelectronic devices. If appropriate stresses are determined...

Mechanical strength. This test method can be used as a non-destructive 100% screening test on the production line to detect and reject components with mechanical strength lower than [a certain value].

Devices with normal values.

Unless otherwise specified, the terms of this document are consistent with IEC 60068-2-7.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.

This document.

IEC 60068-2-7 Environmental testing – Part 2: Test methods – Test Ga and guidelines. Steady-state acceleration (Environmental) Note. GB/T 2423.15-2008 Environmental Testing for Electrical and Electronic Products – Part 2: Test Methods, Test Ga and Guidelines. Steady-State Acceleration (IEC 60068-2-7:1986, IDT)

3 Terms and Definitions

This document does not contain any terms or definitions that need to be defined.

4 Test Equipment

The testing equipment should be able to apply the specified acceleration for the specified time.

5 Procedure

The device should be secured by its housing or with standard clamps, and leads or cables should also be secured. Unless otherwise specified, this should be done at X1, X2,...

A constant acceleration of a specified value for 1 minute is applied to the device in each of the Y1, Z1, and Z2 directions, as shown in Table 1.For the main base of the internal components...

For components whose plane is perpendicular to the Y-axis, the direction in which the component tends to move away from its base should be defined as the Y1 direction. Unless otherwise specified, the following should be adopted.

Test condition E.