GB/T 48164.2-2026Semiconductor devices - Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET) - Part 2: Test method for bipolar degradation due to body diode operation (English PDF)

GB/T 48164.2-2026 is the English-translated version of 半导体器件 碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）可靠性试验方法 第2部分：体二极管工作引起双极退化的试验方法.

Part 2 of this series presents a test method for bipolar degradation caused by body diode operation in silicon carbide metal-oxide semiconductor field effect transistors, commonly called SiC MOSFETs. The internal body diode of such a device may conduct in many circuits, and the effect of that operation on long-term behavior is a reliability matter. The document is of interest to semiconductor manufacturers, qualification teams, test laboratories and power electronics designers.

It adopts an international standard and takes effect on 1 March 2027. As a recommended national standard (GB/T), it is voluntary unless a contract requires it. It forms a companion to the other part dealing with a different reliability mechanism, so reliability engineers will often use the parts together.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

GB/T 48164.1-2026

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