GB/T 48164.1-2026Semiconductor devices - Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET) - Part 1: Test method for bias temperature instability (English PDF)

GB/T 48164.1-2026 is the English-translated version of 半导体器件 碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）可靠性试验方法 第1部分：偏置温度不稳定性试验方法.

Part 1 of this series describes a reliability test method for bias temperature instability in silicon carbide metal-oxide semiconductor field effect transistors, known as SiC MOSFETs. These power devices are used in electric vehicle drives, chargers, solar inverters and industrial power conversion, and threshold stability under bias is a concern for long-term reliability. The document is relevant to semiconductor manufacturers, reliability and qualification engineers, test laboratories and customers who review device data.

It adopts an international standard and takes effect on 1 March 2027. As a GB/T document it is recommended and voluntary. Power electronics suppliers and buyers can use a common method to compare results from different devices. Qualification plans for power modules, onboard chargers and inverter stages can reference it when describing how gate threshold drift is evaluated.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

GB/T 48164.2-2026

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