GB/T 44849-2024Micro-electromechanical systems (MEMS) technology - Forming limit measuring method of metallic film materials (English PDF)
微机电系统(MEMS)技术 金属膜材料成形极限测量方法
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Issued by
State Administration for Market Regulation, China National Standardization Administration
Level / Type
National · Recommended
Issue date
October 26, 2024
Implementation date
May 1, 2025
Scope
GB/T 44849-2024 is the English-translated version of 微机电系统(MEMS)技术 金属膜材料成形极限测量方法.
GB/T 44849-2024 — This document describes a method for measuring the forming limit of metallic film materials with thicknesses ranging from 0.5 µm to 300 µm. This document is applicable to metal film materials used to manufacture electronic components and MEMS through molding processes such as embossing.
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Document preview — GB/T 44849-2024
National Standard of the People's Republic of China
- ICS
- 31.080.99
- Classification
- L 59
Issued by: State Administration for Market Regulation, China National Standardization Administration
Contents
- Preface
- 1 Scope
- 2 Normative references
- 3 Terms, definitions and symbols
- 3.1 Terms and Definitions
- 3.2 Symbols
- 4 Test methods
- 4.1 Overview
- 4.2 Equipment
- 4.3 Sample
- 5 Experimental process and analysis
- 5.1 Test Process
- 5.2 Data Analysis
- 6 Test Report
- Appendix A (Informative) Forming Limit Diagram Principle
- Appendix B (Informative) Grid Marking Method
- B.1 Overview
- B.2 Photocopying
- B.3 Inkjet method
- Appendix C (Informative) Clamping Method
- C.1 Molding method
- C.2 Bonding method
- Appendix D (Informative) Strain Measurement Method
- References
- Figure 1 Forming limit test device
- Figure 2 Rectangular samples with six aspect ratios
- Figure 3 Strain forming limit measurement
- Figure 4 Forming limit diagram of principal strain and secondary strain
- Figure A.1 Forming Limit Diagram
- Figure A.2 Hemispherical punch for forming limit measurement
- Figure A.3 Forming limit measurement grid pattern
- Figure A.4 Loading paths for samples with different aspect ratios
- Figure B.1 Steps for marking a grid using the photocopy method
- Figure B.2 Steps for marking a grid using the inkjet method
- Figure C.1 Ring die for holding samples
- Figure C.2 Using adhesive to clamp the sample
- Figure D.1 Schematic diagram of the installation method of the digital camera when measuring strain
- Figure D.2 Example of pixel conversion of deformed sample
- Table 1 List of alphabetical symbols
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting is required.
This document is equivalent to IEC 62047-14:2012 "Semiconductor devices - Microelectromechanical devices - Part 14: Forming limits of metal film materials" Measurement Methods.
The following minimal editorial changes have been made to this document.
To coordinate with the existing standards, the name of the standard was changed to "Measurement of forming limit of metal film materials in micro-electromechanical systems (MEMS) technology" method";
Deleted the description of the purpose and significance of using this document in "Scope";
Added the "Notes" to 3.1.3 and 3.1.4; -Added informative reference to ISO 21920-2:2021 (see 4.2); -the symbol for sample length "h" is changed to "l";
Added the markings of d0, d1, and d2 in Figure 3 and Figure D.2, and deleted the formula in Figure D.2 in IEC 62047-14:2012;
Added the label of "inkjet head" in Figure B.2, and added B.3 c). -
1 Scope
This document describes a method for measuring the forming limit of metallic film materials with thicknesses ranging from 0.5 µm to 300 µm.
This document is applicable to metal film materials used to manufacture electronic components and MEMS through molding processes such as embossing.
2 Normative references
The contents of the following documents constitute the essential clauses of this document through normative references in this document.
For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies.
In this document.
IEC 62047-1 Semiconductor devices Microelectromechanical devices Part 1: Terms and definitions Micro-electromechanical devices-Part 1: Terms and definitions) Note. GB/T 26111-2023 Microelectromechanical Systems (MEMS) Technical Terminology (IEC 62047-1:2016, MOD)
3 Terms, definitions and symbols
3.1 Terms and Definitions
For the purposes of this document, the terms and definitions defined in IEC 62047-1 and the following apply.
3.1.1
circular grid
Grid used to measure the local deformation of the sample within the circle.
3.1.2
grid patterns
A pattern marked on the surface of a test material to directly measure the formability of a metal film material.
NOTE. The grid consists of a pattern of circles and squares.
3.1.3
major axis
The longest possible line segment connecting two points on the deformed ellipse passes through the two foci of the ellipse.
Note. See d1 in Figure 3.
3.1.4
minor axis
The longest line segment connecting two points on the deformed ellipse and perpendicular to the major axis.
Note. See d2 in Figure 3.
3.1.5
square grid
A square grid used to measure the overall deformation of a test material.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.
Referenced standards
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