GB/T 43315-2023Test method for flow pattern defects in silicon wafer—Etching technique (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

1 Scope

This document specifies the method for detecting flow pattern defects in silicon wafers using a metallographic microscope after chemical etching.

This document is suitable for the detection of flow pattern defects in silicon wafers with resistivity greater than 1ohm·cm.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 14264 Semiconductor material terminology

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Principles

The sample is corroded by a specific preferred corrosive liquid. The corrosive liquid reacts with silicon to produce hydrogen bubbles, which appear where there are holes and some gap-type defects.

Show the flow-type defects similar to the "V" structure, observe them with a metallographic microscope, and calculate the density of the flow-type defects.

5 Interference factors

5.1 If the preferred corrosive solution is left for too long, it will volatilize or produce sediment, which will affect the corrosion effect.

5.2 The surface of the sample is rough or has scratches, scratches, etc., which will affect the test results.

5.3 Placing the sample too close may cause bubble defects on the surface of the sample, affecting the observation results.

5.4 The way the specimen is placed (flat or vertical) affects the corrosion effect.

5.5 The corrosion rate is related to the number of times the corrosive liquid is used, temperature, storage time, and the number of corrosion samples. It can be determined based on the corrosion rate of the previous batch of samples.

Calculate the corrosion time required for the next batch of samples to achieve consistent corrosion effects.

6 Test conditions

Unless otherwise specified, testing shall be carried out under the following conditions.

a) The ambient temperature is (22±5)°C;

b) The relative humidity of the environment is not greater than 80%.

7 Reagents or materials

Unless otherwise stated, only reagents confirmed to be of analytical grade and distilled or deionized water or water of equivalent purity are used in the analysis.