GB/T 42709.6-2026Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (English PDF)

Foreword

Drafting.

This document is Part 6 of GB/T 42709 "Semiconductor Devices - Microelectromechanical Devices". GB/T 42709 has been published as follows.

Part 2.

---Part 2: Tensile Testing Methods for Thin Film Materials;

---Part 3: Standard test pieces for tensile testing of thin films;

---Part 5: Radio Frequency MEMS Switches;

---Part 6: Axial fatigue testing methods for thin film materials;

---Part 7: MEMS Bulk Acoustic Filters and Duplexers for RF Control and Selection;

---Part 8: Bending Test Methods for Measuring the Tensile Properties of Strip Films;

---Part 12: Bending fatigue testing method for thin film materials using MEMS structural resonance method;

---Part 19: Electronic Compass;

---Part 21: Methods for Measuring Poisson's Ratio in MEMS Thin Film Materials;

---Part 22: Electromechanical Tensile Testing Methods for Conductive Thin Films on Flexible Substrates;

---Part 29: Electromechanical relaxation test methods for suspended conductive films at room temperature;

---Part 35: Methods for testing the electrical properties of flexible MEMS devices under bending deformation;

---Part 36: Environmental and Dielectric Permeability Testing Methods for MEMS Piezoelectric Thin Films;

---Part 38: Test Method for Adhesion Strength of Metal Powder Paste in MEMS Interconnects;

---Part 40: Threshold testing method for MEMS inertial shock switches.

This document is equivalent to IEC 62047-6:2009 "Semiconductor devices - Microelectromechanical devices - Part 6: Axial fatigue of thin film materials".

The following minimal editorial changes have been made to this document.

---Delete "Note. Adapted from ASTM E1823-05a" from sections 3.1, 3.2, and 3.3, and also delete the corresponding references from the bibliography.

Content, and adjust the serial numbers of other documents;

---Change the abbreviation P for force in sections 3.1, 3.2, 3.3, and 3.4 to F;

---In Appendix B, the referenced standard ISO 6892 has been changed to the current standard ISO 6892-1, and the corresponding standard name in the references has been changed;

---Delete the second paragraph in Appendix E. "For metallic thin film materials, fatigue is usually controlled by a single mechanism, and the number of samples can be determined according to..." ISO 12107 defines this. For silicon thin film materials, it is believed that multiple fatigue mechanisms are involved, and the possible fatigue mechanisms have not yet been determined.

Therefore, the analytical methods in ISO 12107 cannot be directly used to determine the number of samples for silicon thin film materials.

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document was prepared by the National Integrated Circuit Standardization Technical Committee (SAC/TC599) and the National Microelectromechanical Technology Standardization Technical Committee.

(SAC/TC336) are jointly under the jurisdiction of the State Administration of Taxation.

Introduction

GB/T 42709 "Semiconductor Devices and Microelectromechanical Devices" is proposed to consist of the following parts.

---Part 3: Standard Test Pieces for Tensile Testing of Thin Films. The purpose is to specify the test pieces for tensile testing of MEMS thin film materials.

Relevant requirements.

---Part 5: Radio Frequency MEMS Switches. The purpose is to define the terminology and definitions, characteristic requirements, and testing procedures for radio frequency MEMS switches.

Methods, etc.

---Part 6: Axial Fatigue Testing Methods for Thin Film Materials. The purpose is to specify axial fatigue testing methods for MEMS thin film materials.

method.

---Part 7: MEMS Bulk Acoustic Filters and Duplexers for RF Control and Selection. The purpose is to specify MEMS bulk acoustic filters and duplexers.

Terminology and definitions, characteristic requirements, and test methods for acoustic resonators, filters, and duplexers.

---Part 8: Bending Test Method for Measuring the Tensile Properties of Strip Films. The purpose is to specify the method for measuring the tensile properties of strip films.

A bending test method for sexuality.

---Part 9: Measurement of inter-wafer bonding strength. The purpose is to specify the testing methods for the bonding strength of MEMS wafers.

---Part 11: Test method for the linear thermal expansion coefficient of materials in suspended microelectromechanical systems. The purpose is to specify the linear thermal expansion coefficient of materials in suspended microelectromechanical systems.

Method for testing the linear thermal expansion coefficient of MEMS materials.

---Part 12: Bending Fatigue Testing Method for Thin Film Materials Using MEMS Structural Resonance. The purpose is to specify the testing methods for MEMS thin film materials.

Methods for testing the bending fatigue of membrane materials.

---Part 13: Bending and Shear Test Methods for Bond Strength of MEMS Structures. The purpose is to specify the bonding strength of MEMS structures.

Strength test method.

---Part 16: Test methods for wafer curvature and cantilever beam deflection of residual stress in MEMS films. The purpose is to specify the methods for measuring the residual stress in MEMS films.

Two test methods were used. wafer curvature and cantilever beam deflection to measure residual stress in the membrane.

---Part 21: Methods for Measuring Poisson's Ratio of MEMS Thin Film Materials. The purpose is to specify methods for measuring the Poisson's ratio of MEMS thin film materials.

method.

---Part 22: Electromechanical Tensile Testing Methods for Conductive Thin Films on Flexible Substrates. The purpose is to specify the electromechanical tensile testing methods for conductive thin film materials in MEMS.

Electrical property tensile testing method.

---Part 26: Description and Test Methods for Microgrooves and Needle Structures. The purpose is to specify the description and test methods for MEMS microgrooves and needle structures.

Description and experimental methods.

---Part 27: Miniature V-T Test (MCT) Method for Measuring Glass Slurry Bond Strength. The purpose is to specify the glass fusion bond strength.

The MCT test method for the bond strength of the structure.

---Part 29: Electromechanical Relaxation Test Methods for Suspended Conductive Thin Films at Room Temperature. The purpose is to specify the electromechanical relaxation test methods for suspended conductive thin films in MEMS devices.

Electromechanical relaxation test method for thin films at room temperature.

---Part 32: Nonlinear Vibration Testing Methods for MEMS Resonators. The purpose is to define the nonlinear vibration characteristics of MEMS resonators.

Performance testing methods.

---Part 35: Test methods for electrical properties of flexible MEMS devices under bending deformation. The purpose is to specify the electrical properties of flexible electromechanical devices...

Methods for testing electrical properties under bending deformation.

---Part 36: Environmental and Dielectric Permeability Testing Methods for MEMS Piezoelectric Thin Films. The purpose is to specify the environmental and dielectric withstand voltage testing methods for MEMS piezoelectric thin films.

Environmental and dielectric withstand performance test methods.

---Part 38: Test Method for Adhesion Strength of Metal Powder Paste in MEMS Interconnects. The purpose is to specify the adhesion strength of metal powder paste in MEMS interconnects.

This is a test method for the adhesion strength of powders and pastes.

---Part 40: Threshold Test Methods for MEMS Inertial Shock Switches. The purpose is to specify the threshold values for MEMS inertial shock switches.

---Part 44: Testing Methods for Dynamic Characteristics of MEMS Resonant Electric Field Sensing Devices. The purpose is to specify methods for evaluating and determining...

Terminology, definitions, and test methods for the dynamic performance of MEMS resonant electric field sensitive devices.

Semiconductor devices and microelectromechanical devices Part 6: Axial Fatigue Testing Methods for Thin Film Materials

1 Scope

This document describes thin film materials with length and width dimensions less than 1 mm and thickness dimensions between 0.1 µm and 10 µm under constant...

A method for axial tensile fatigue testing within a force range or a constant displacement range. Thin films are a major component of microelectromechanical systems (MEMS) and micromechanical systems.

Structural materials.

The main structural materials used in MEMS, micromechanics, etc., have special characteristics, such as typical micrometer-scale dimensions, and are manufactured using deposition processes.

Materials are processed into specimens using non-mechanical methods (including photolithography). This document describes a method for axial force fatigue testing of miniature smooth specimens.

This method ensures the accuracy corresponding to the special characteristics. The test is conducted at room temperature in air, with the load applied along the longitudinal axis of the specimen.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.

This document.

GB/T 42709.2-2026 Semiconductor devices and microelectromechanical devices—Part 2: Tensile testing methods for thin film materials (IEC 62047-2:2006, IDT)

3 Terms and Definitions

The following terms and definitions apply to this document.

maximum force

Fmax

The maximum algebraic value of the force applied in the loop.

minimum force

Fmin

The minimum algebraic value of the force applied in the loop.

mean force

Fmean

The algebraic mean of the maximum and minimum forces under constant amplitude load or in a single cycle.

force range

deltaF

The algebraic difference between the maximum and minimum forces under constant amplitude load.