GB/T 42709.5-2023Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches (English PDF)

1 Scope

This document defines the terms, definitions and symbols used to evaluate and determine the basic ratings and characteristics of RF MEMS switches, and describes

Parameter test method:

This document is applicable to various types of RF MEMS switches: See Appendix A for general descriptions of RF MEMS switches: by contact

Classification, including DC contact type switch and capacitive contact type switch; classification by structure, including series switch and parallel switch, RF MEMS switch

See Appendix B for the description of the geometric structure of the switch; according to the classification of the switch network, it includes single-pole single-throw switches, single-pole double-throw switches, and double-pole double-throw switches;

Classification of drive methods, including electrostatic drive switches, thermoelectric drive switches, electromagnetic drive switches, and piezoelectric drive switches: RF MEMS Switches

In multi-band or multi-mode mobile phones, smart radar systems, reconfigurable RF devices and systems, SDR (software defined radio) phones, test equipment

It is widely used in equipment, tunable devices and systems, satellites, etc: For the application description of RF MEMS switches, see Appendix E:

2 Normative references

The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references

For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document:

GB/T 4937:12-2018 Mechanical and climatic test methods for semiconductor devices Part 12: Frequency sweep vibration (IEC 60749-12:

2002, IDT)

GB/T 4937:27-2023 Mechanical and climatic test methods for semiconductor devices Part 27: Electrostatic discharge (ESD) susceptibility

Test mechanical model (MM) (IEC 60749-27:2012, IDT)

Note: GB/T 20870:1-2007 Semiconductor Devices Part 16-1: Microwave Integrated Circuit Amplifiers (IEC 60747-16-1:2001, IDT)

IEC 60749-5:20171) Mechanical and climatic test methods for semiconductor devices Part 5: Steady-state temperature and humidity bias life test midity bias life test)

1) IEC 60749-5:2004 is replaced by the current version, and the referenced content has no technical difference:

2) IEC 60749-10:2002 is replaced by the current version, and the referenced content has no technical difference:

3 Terms and Definitions

The following terms and definitions apply to this document:

SJ/T 11141 | SJ/T 11281 | GB/T 18910.2 | GB/T 42709.3 | GB/T 42709.2 | GB/T 42709.19 | […]