GB/T 42709.35-2026Semiconductor devices - Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting.

This document is Part 35 of GB/T 42709 "Semiconductor Devices - Microelectromechanical Devices". GB/T 42709 has been published as follows.

Part 2.

---Part 2: Tensile Testing Methods for Thin Film Materials;

---Part 3: Standard test pieces for tensile testing of thin films;

---Part 5: Radio Frequency MEMS Switches;

---Part 6: Axial fatigue testing methods for thin film materials;

---Part 7: MEMS Bulk Acoustic Filters and Duplexers for RF Control and Selection;

---Part 8: Bending Test Methods for Measuring the Tensile Properties of Strip Films;

---Part 12: Bending fatigue testing method for thin film materials using MEMS structural resonance method;

---Part 19: Electronic Compass;

---Part 21: Methods for Measuring Poisson's Ratio in MEMS Thin Film Materials;

---Part 22: Electromechanical Tensile Testing Methods for Conductive Thin Films on Flexible Substrates;

---Part 29: Electromechanical relaxation test methods for suspended conductive films at room temperature;

---Part 35: Methods for testing the electrical properties of flexible MEMS devices under bending deformation;

---Part 38: Test Method for Adhesion Strength of Metal Powder Paste in MEMS Interconnects;

---Part 40: Threshold testing method for MEMS inertial shock switches.

This document is equivalent to IEC 62047-35:2019 "Semiconductor devices – Microelectromechanical devices – Part 35: Flexible MEMS devices".

A method for testing the electrical properties of components under bending deformation.

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document was prepared by the National Integrated Circuit Standardization Technical Committee (SAC/TC599) and the National Microelectromechanical Technology Standardization Technical Committee.

(SAC/TC336) are jointly under the jurisdiction of the State Administration of Taxation.

Introduction

This document applies to flexible MEMS devices and clarifies the testing methods for their electrical characteristics under bending deformation. GB/T 42709 "Semiconductors" the "Micro-electromechanical Devices" section is planned to consist of 23 parts.

---Part 2: Tensile Testing Methods for Thin Film Materials. The purpose is to specify tensile testing methods for MEMS thin film materials.

---Part 3: Standard Test Pieces for Tensile Testing of Thin Films. The purpose is to specify the test pieces for tensile testing of MEMS thin film materials.

Relevant requirements.

---Part 5: Radio Frequency MEMS Switches. The purpose is to define the terminology, definitions, characteristic requirements, and test methods for radio frequency MEMS switches.

Laws, etc.

method.

---Part 7: MEMS Bulk Acoustic Filters and Duplexers for RF Control and Selection. The purpose is to specify MEMS bulk acoustic filters and duplexers.

Terminology, definitions, characteristic requirements, and test methods for acoustic resonators, filters, and duplexers.

---Part 8: Bending Test Method for Measuring the Tensile Properties of Strip Films. The purpose is to specify the method for measuring the tensile properties of strip films.

A bending test method for sexuality.

---Part 9: Measurement of inter-wafer bonding strength. The purpose is to specify the testing methods for the bonding strength of MEMS wafers.

---Part 11: Test method for the linear thermal expansion coefficient of materials in suspended microelectromechanical systems. The purpose is to specify the linear thermal expansion coefficient of materials in suspended microelectromechanical systems.

Method for testing the linear thermal expansion coefficient of MEMS materials.

---Part 12: Bending Fatigue Testing Method for Thin Film Materials Using MEMS Structural Resonance. The purpose is to specify the testing methods for MEMS thin film materials.

Methods for testing the bending fatigue of membrane materials.

---Part 13: Bending and Shear Test Methods for the Adhesion Strength of MEMS Structures. The purpose is to specify the adhesion strength of MEMS structures.

Strength test method.

---Part 16: Test methods for residual stress in MEMS films using wafer curvature and cantilever beam deflection. The purpose is to specify the testing methods for MEMS films.

Two test methods were used. residual stress wafer curvature and cantilever beam deflection.

---Part 19: Electronic Compass. The purpose is to define the terminology, definitions, performance requirements, and testing methods for electronic compasses.

---Part 21: Methods for Measuring Poisson's Ratio of MEMS Thin Film Materials. The purpose is to specify methods for measuring the Poisson's ratio of MEMS thin film materials.

method.

---Part 22: Electromechanical Tensile Testing Methods for Conductive Thin Films on Flexible Substrates. The purpose is to specify the electromechanical tensile testing methods for conductive thin film materials in MEMS.

Electrical property tensile testing method.

Description and experimental methods.

---Part 27: Miniature V-T Test (MCT) Method for Measuring Bond Strength of Glass Slurry. The purpose is to specify the bonding strength of glass slurry...

The MCT test method for composite strength.

---Part 29: Electromechanical Relaxation Test Methods for Suspended Conductive Thin Films at Room Temperature. The purpose is to specify the electromechanical relaxation test methods for suspended conductive thin films in MEMS devices.

Electromechanical relaxation test method for thin films at room temperature.

---Part 32: Nonlinear Vibration Testing Methods for MEMS Resonators. The purpose is to define the nonlinear vibration characteristics of MEMS resonators.

Performance testing methods.

---Part 35: Test methods for electrical properties of flexible MEMS devices under bending deformation. The purpose is to specify the electrical properties of flexible electromechanical devices...

Methods for testing electrical properties under bending deformation.

---Part 36: Environmental and Dielectric Permeability Testing Methods for MEMS Piezoelectric Thin Films. The purpose is to specify the environmental and dielectric withstand voltage testing methods for MEMS piezoelectric thin films.

Environmental and dielectric withstand performance test methods.

---Part 38: Test Method for Adhesion Strength of Metal Powder Paste in MEMS Interconnects. The purpose is to specify the adhesion strength of metal powder paste in MEMS interconnects.

This is a test method for the adhesion strength of powders and pastes.

---Part 40: Threshold Test Methods for MEMS Inertial Shock Switches. The purpose is to specify the threshold values for MEMS inertial shock switches.

Test method.

---Part 44: Testing Methods for Dynamic Characteristics of MEMS Resonant Electric Field Sensing Devices. The purpose is to specify methods for evaluating and determining...

Terminology, definitions, and testing methods for the dynamic performance of MEMS resonant electric field sensitive devices.

Semiconductor devices and microelectromechanical devices Part 35: Bending Deformation of Flexible MEMS Devices

1 Scope

This document describes methods for testing the electrical properties of flexible MEMS devices under bending deformation, including those located on or embedded in flexible films.

Passive and/or active devices in thin films.

The devices applicable to this document typically have horizontal dimensions ranging from 1 mm to 300 mm and vertical dimensions typically ranging from 10 µm.

1 mm, but this is not the limit value of the device under test. This test method involves bending the device unidirectionally in a quasi-static manner until it reaches its maximum allowable bending radius.

The curvature, i.e., the complete bending of the device, is used to obtain the full loss characteristics of the device's electrical properties under bending deformation. This document describes the device under certain bending conditions.

Safety evaluation under deformation and reliability design of products using these devices are of great significance.

2 Normative references

This document has no normative references.

3 Terms and Definitions

The following terms and definitions apply to this document.